Abstract: A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.

Abstract: A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Abstract: A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is disposed on the surface of the soluble organic semiconductor material.

Abstract: A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.

Abstract: A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a patterned spacing layer on the flexible substrate with a spacing material deposition source and a mask; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Abstract: A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a spacing material layer on the flexible substrate; patterning the spacing material layer to form a patterned spacing layer; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Abstract: The invention provides flexible electronic substrate structures and fabrication methods thereof. The flexible electronic substrate structures include a large scale carrier and a plurality of flexible substrates disposed on the large scale carrier, wherein the flexible substrate includes polymeric material formed by coating. The flexible substrates are patterned polymer materials formed by a coating process, wherein the coating process comprises doctor knife coating, spin coating, or table coating.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: Alignment precision enhancement of electronic component process on flexible substrate device and method thereof the same is proposed. The process step of a flexible substrate is put on a substrate holder, wherein the flexible substrate is fixed by a polymer tape. A plural of alignment marks is making for lithography process. An unstressed cut is separated the flexible substrate and substrate holder when the electronic component is made.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: Alignment precision enhancement of electronic component process on flexible substrate device and method thereof the same is proposed. The process step of a flexible substrate is put on a substrate holder, wherein the flexible substrate is fixed by a polymer tape. A plural of alignment marks is making for lithography process. An unstressed cut is separated the flexible substrate and substrate holder when the electronic component is made.

Abstract: A color filter manufacturing method for a plastic substrate uses an extrusion process to form a plastic substrate with multiple grooves. Then, it uses inkjet printing method to jet photo resists into the groove of the plastic substrate after defining the primary colors of red R., green G., and blue B. The method can overcome the problem happened in the conventional CF photolithography process. This, therefore, can simplify the manufacturing process, and can apply to the large-area plastic substrate of a color filter.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.

Abstract: A method for fabricating a thin film transistor (TFT) display is provided, wherein the processes of a liquid crystal substrate and an organic thin film transistor (OTFT) substrate are separated. The fabrication of liquid crystal substrate employs the technology of polymer encapsulated liquid crystal molecule, and leaves the polymeric layer as a substrate using a sacrificial layer, so as to improve the flexibility. And the TFT substrate has a high adhesive polymeric protective layer provided on its surface, so as to combine the fabricated TFT substrate and the liquid crystal substrate by laminating. Thereby, the processes of the liquid crystal substrate and the TFT substrate will not affect each other, to improve the process yield and meet the demand for the variety of products.

Abstract: A photosensing soluble organic semiconductor material is disclosed, which includes a Diels-Alder adduct which is a polycyclic aromatic compound with a dienophile. The polycyclic aromatic compound is selected from the group consisting of oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene. And the dienophile is represented by the formula of O?S?N—R1, wherein R1 is SO2R2, SO3R2, SO2?, or SO3?; and wherein R2 is selected from the group consisting of alkyl, alkoxy, acyl, aryl, aralkyl, chloroalkyl, fluoroalkyl, and substituted aryl with 1-12 carbon atoms.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: A method for manufacturing an organic thin-film transistor with a plastic substrate, comprising steps of: providing a mold and a plastic substrate, said mold being provided with a relief printing structure; imprinting said plastic substrate by said mold so as to define source/drain electrode regions on said plastic substrate; forming a first electrode layer so as to form source/drain electrodes on said source/drain electrode regions on said plastic substrate; forming a plurality of semiconductor mesas, each of said semiconductor mesas covering a pair of said source/drain electrodes; forming an insulating layer; forming a second electrode layer, being separated from and on said semiconductor mesas by said insulating layer; and forming a passivation layer.

Abstract: A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Abstract: An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.