Abstract: The semiconductor structure manufacturing method includes the steps of: providing a substrate with bit line contact regions and isolation regions located between adjacent bit line contact regions; forming a groove in the substrate, the bottom of the groove exposes the bit line contact region and the isolation region adjacent to the bit line contact region; forming a contact region isolation layer covering at least sidewalls of the groove; and forming a contact region to cover the contact region isolating the surface of the layer and filling the bit line contact layer of the groove, the bit line contact layer being in contact with the bit line contact region at the bottom of the groove; forming a bit line layer on the bit line contact layer. The invention avoids damage to the sidewalls of the active region in the substrate.

Abstract: A phase shifter is provided to include: a first substrate, a second substrate, a dielectric layer, a transmission line, a ground electrode and at least one auxiliary electrode, where the first substrate and the second substrate are opposite to each other, the dielectric layer is between the first substrate and the second substrate, the transmission line is between the second substrate and the dielectric layer, the auxiliary electrode is between the first substrate and the dielectric layer, and the ground electrode is on a side of the second substrate distal to the dielectric layer; a dielectric constant of the dielectric layer changes with a voltage between the auxiliary electrode and the transmission line; an orthographic projection of the transmission line on the first substrate overlaps with an orthographic projection of the auxiliary electrode on the first substrate.

Abstract: The present application discloses a semiconductor structure and a method for fabrication. This technique improves the stability of the bit line structure. The semiconductor structure is formed in a bit line trench in a substrate, it includes: a bit line conductive layer formed in the bit line trench, and the top surface of the bit line conductive layer is higher the top surface of the substrate; a barrier layer formed at least partially between the bit line conductive layer and the inner wall of the bit line trench; and an isolation layer formed on top of the bit line conductive layer.

Abstract: The present application relates to a semiconductor structure and a method of manufacturing the same. The method includes: providing a substrate; forming a bitline contact hole located in the substrate, and a non-metal conductive layer with which a surface of the substrate is covered and the bitline contact hole is filled, the non-metal conductive layer provided with a first opening therein, the first opening aligned with the bitline contact hole; forming a metal conductive layer, with which a surface of the non-metal conductive layer is covered; forming an insulation layer, with which a surface of the metal conductive layer surface is covered; and etching the insulation layer, the metal conductive layer, and the non-metal conductive layer to form a bitline structure.

Abstract: The present disclosure provides an antenna device and a manufacturing method therefor, a control method, and an electronic device. The antenna device includes a first and a second substrate structure, and a liquid crystal layer between the first and the second substrate structure. The first substrate structure includes a first substrate and multiple antenna patches. The second substrate structure is on the side of the multiple antenna patches away from the first substrate, and includes a second substrate and a metal layer having multiple gaps. One gap corresponds to one antenna patch, the region where the orthographic projection of each gap on the first substrate overlaps that of the corresponding antenna patch is a first region, the orthographic projection of each gap on the first substrate further includes a second region and a third region, and the third region is located between the second region and the third region.

Abstract: An antenna includes: a substrate; a first reference electrode on a first surface of the substrate; a radiating element on a second surface of the substrate, feeding directions of a first port and a second port of the radiating element are different; and at least one transmission structure on the second surface of the substrate and connected to at least one of the first port and the second port. The transmission structure includes: a signal electrode, a second reference electrode on at least one side of the signal electrode, and at least one membrane bridge; the signal electrode feeds a microwave signal into the radiating element, is positioned in a space surrounded by the membrane bridge and the substrate, and is insulated from the membrane bridge through an interlayer dielectric layer; orthographic projections of the membrane bridge and the second reference electrode on the substrate are overlapped.

Abstract: Embodiments of the present disclosure relate to a coupling component, a microwave device and an electronic device. The coupling component includes a first ground electrode, a first dielectric layer, a first transmission line, a second dielectric layer, a second ground electrode, a first substrate, a second transmission line, a second substrate and a third ground electrode which are sequentially stacked. Each of the first to third electrodes has a slot, and orthographic projections of the slots on the first dielectric layer overlap. An orthographic projection of a coupling end of the first transmission line on the first dielectric layer overlaps an orthographic projection of the slot of the second ground electrode on the first dielectric layer. An orthographic projection of a coupling end of the second transmission line on the first dielectric layer overlaps the orthographic projection of the slot of the second ground electrode.

Abstract: A slot antenna and a communication device including the slot antenna are provided. The slot antenna includes: a dielectric layer having a first surface and a second surface opposite to each other, a radiation layer on the first surface of the dielectric layer and having a plurality of slots therein, and a first shielding layer on the second surface of the dielectric layer and electrically connected to the radiation layer.

Abstract: A method for manufacturing a semiconductor structure includes: providing a substrate, a first mask and a second mask, etching the substrate by respectively using the first mask and the second mask, so as to form first grooves and second grooves on the substrate, wherein regions, in the substrate, where the first grooves and the second grooves are located form bit line grooves; and forming a conductive layer in each of the bit line grooves.

Abstract: The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.

Abstract: The present disclosure provides a phase shifter and an antenna, and relates to the field of communication technology. The phase shifter provided by the embodiment of the present disclosure is divided into a first feeding region, a second feeding region and a phase-shift region. The phase shifter includes: a first substrate and a second substrate provided opposite to each other, a dielectric layer provided between the first substrate and the second substrate, and a first feeding structure and a second feeding structure. The first feeding structure is electrically coupled to one end of the signal line, and the second feeding structure is electrically coupled to the other end of the signal line. The first feeding structure is located in the first feeding region; and the second feeding structure is located in the second feeding region. Recesses are formed in the first base substrate and/or in the second base substrate.

Abstract: An antenna includes: a substrate; a first reference electrode on a first surface of the substrate; a radiating element on a second surface of the substrate, feeding directions of a first port and a second port of the radiating element are different; and at least one transmission structure on the second surface of the substrate and connected to at least one of the first port and the second port. The transmission structure includes: a signal electrode, a second reference electrode on at least one side of the signal electrode, and at least one membrane bridge; the signal electrode feeds a microwave signal into the radiating element, is positioned in a space surrounded by the membrane bridge and the substrate, and is insulated from the membrane bridge through an interlayer dielectric layer; orthographic projections of the membrane bridge and the second reference electrode on the substrate are overlapped.

Abstract: An antenna includes: a dielectric layer having first and second surfaces opposite to each other; a radiating layer on the first surface, and having therein a slit; a first shielding layer on the second surface, and being electrically connected to the radiating layer; a first insulating layer on an upper side of the radiating layer; and a switch unit on an upper side of the first insulating layer, and corresponding to the slit. Each switch unit includes: a first electrode, a second insulating layer, a connecting portion, and a second electrode on the first insulating layer sequentially. Orthogonal projections of the first and second electrodes on the dielectric layer overlap each other. The connecting portion is connected to the second electrode to form a gap between the first and second electrodes. Orthogonal projections of the second electrode and a corresponding slit on the dielectric layer overlap each other.

Abstract: A display device is provided. The display device includes a display module and an antenna module. The antenna module includes at least one antenna body for receiving a wireless signal; a signal transmission line coupled to the at least one antenna body; an antenna carrier plate having a working region and a bending region, the antenna carrier plate in the bending region is bent from a display surface to a non-display surface, so that the signal transmission line extends from the display surface to the non-display surface; an adapter circuit board on the non-display surface; and an adapter coupling the signal transmission line to the adapter circuit board to enable the adapter circuit board to be signal coupled to the at least one antenna body.

Abstract: A phase shifter includes opposite first and second substrates and a dielectric layer between the first and second substrates. The first substrate includes: a first base plate; a signal line and a reference electrode on a side of the first base plate proximal to the dielectric layer. The second substrate includes a second base plate, and at least one patch electrode on a side of the second base plate proximal to the dielectric layer. The phase shifter further includes structures connected to both ends of the signal line, respectively; the first feeding structure changes a transmission direction of a microwave signal through the signal line, so that the microwave signal is transmitted in a first direction; and the second feeding structure changes a transmission direction of the microwave signal through the signal line, so that the microwave signal is transmitted in a second direction.

Abstract: Provided are a multiple-level interconnect structure having a scatterometry test layer and a manufacturing method thereof. The multiple level interconnect structure includes a patterned reflective layer, a bulk reflective layer and a patterned test layer. The patterned reflective layer is disposed on a substrate and includes a first reflective pattern and a second reflective pattern separated from each other. The bulk reflective layer is disposed on the patterned reflective layer. The patterned test layer is disposed on the bulk reflective layer.

Abstract: The semiconductor structure manufacturing method includes the steps of: providing a substrate with bit line contact regions and isolation regions located between adjacent bit line contact regions; forming a groove in the substrate, the bottom of the groove exposes the bit line contact region and the isolation region adjacent to the bit line contact region; forming a contact region isolation layer covering at least sidewalls of the groove; and forming a contact region to cover the contact region isolating the surface of the layer and filling the bit line contact layer of the groove, the bit line contact layer being in contact with the bit line contact region at the bottom of the groove; forming a bit line layer on the bit line contact layer. The invention avoids damage to the sidewalls of the active region in the substrate.

Abstract: The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.

Abstract: The present disclosure provides to a display substrate and a method for manufacturing the display substrate. The display substrate include: a substrate; a polarizing layer disposed on a light-emitting side of the substrate; a common electrode layer disposed on a light-incident side of the substrate; a light shielding layer disposed on a side of the common electrode layer away from the substrate; and at least one antenna array, wherein each of the at least one antenna array comprises a plurality of antenna units, and each antenna unit includes a first radiating portion disposed on the light-emitting side of the substrate and a grounding portion disposed on the light-incident side of the substrate.

Abstract: A phased array antenna system is provided, including a feed structure and at least one phased array antenna element, wherein the at least one phased array antenna element includes a first impedance transformation unit, an MEMS phase-shifting multi-unit and an antenna. The first impedance transformation unit is connected to a feed structure, and the MEMS phase-shifting multi-unit is connected between the first impedance transformation unit and the antenna.