Abstract: The semiconductor structure manufacturing method includes the steps of: providing a substrate with bit line contact regions and isolation regions located between adjacent bit line contact regions; forming a groove in the substrate, the bottom of the groove exposes the bit line contact region and the isolation region adjacent to the bit line contact region; forming a contact region isolation layer covering at least sidewalls of the groove; and forming a contact region to cover the contact region isolating the surface of the layer and filling the bit line contact layer of the groove, the bit line contact layer being in contact with the bit line contact region at the bottom of the groove; forming a bit line layer on the bit line contact layer. The invention avoids damage to the sidewalls of the active region in the substrate.

Abstract: The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.

Abstract: The present disclosure provides to a display substrate and a method for manufacturing the display substrate. The display substrate include: a substrate; a polarizing layer disposed on a light-emitting side of the substrate; a common electrode layer disposed on a light-incident side of the substrate; a light shielding layer disposed on a side of the common electrode layer away from the substrate; and at least one antenna array, wherein each of the at least one antenna array comprises a plurality of antenna units, and each antenna unit includes a first radiating portion disposed on the light-emitting side of the substrate and a grounding portion disposed on the light-incident side of the substrate.

Abstract: A phased array antenna system is provided, including a feed structure and at least one phased array antenna element, wherein the at least one phased array antenna element includes a first impedance transformation unit, an MEMS phase-shifting multi-unit and an antenna. The first impedance transformation unit is connected to a feed structure, and the MEMS phase-shifting multi-unit is connected between the first impedance transformation unit and the antenna.

Abstract: The present disclosure provides a phase shifter, a method for fabricating the same, and an antenna. The phase shifter includes a substrate, first and second transmission lines spaced apart from each other on the substrate, and at least one phase control element on the substrate. Each phase control element includes a membrane bridge and a transmission line extension which is on the substrate, between the first and second transmission lines, and electrically coupled to the first transmission line; the membrane bridge is on a side of the transmission line extension distal to the substrate, opposite to and spaced apart from the transmission line extension, and electrically coupled to the second transmission line. The membrane bridge is configured to move a portion of the membrane bridge in response to the first and second transmission lines being applied with different voltages, to change a distance from the transmission line extension.

Abstract: Embodiments of the present disclosure relate to a coupling component, a microwave device and an electronic device. The coupling component includes a first ground electrode, a first dielectric layer, a first transmission line, a second dielectric layer, a second ground electrode, a first substrate, a second transmission line, a second substrate and a third ground electrode which are sequentially stacked. Each of the first to third electrodes has a slot, and orthographic projections of the slots on the first dielectric layer overlap. An orthographic projection of a coupling end of the first transmission line on the first dielectric layer overlaps an orthographic projection of the slot of the second ground electrode on the first dielectric layer. An orthographic projection of a coupling end of the second transmission line on the first dielectric layer overlaps the orthographic projection of the slot of the second ground electrode.

Abstract: A method for manufacturing the mask structure includes: forming a first mask layer, a first buffer layer, a second mask layer, and a second buffer layer sequentially stacked from bottom to top; patterning the second buffer layer and the second mask layer, as to obtain a first pattern structure, the first pattern structure exposes a part of the first buffer layer; forming a first mask pattern on sidewalls of the first pattern structure; forming a carbon plasma layer as a protective layer on an exposed part of an upper surface of the first buffer layer; removing the first pattern structure; and removing a remaining protective layer.

Abstract: A method of forming a semiconductor memory includes: providing comprising a storage area and a peripheral area located outside the storage area, wherein the substrate has and a plurality of bit line contact parts and a plurality of capacitor contact parts located in the storage area, and a peripheral gate contact part and a peripheral circuit contact part located in the peripheral area; forming a plurality of bit lines, and simultaneously forming a peripheral gate; forming a bit line isolation layer, and simultaneously forming a peripheral gate isolation layer; forming a first conductive capacitor layer in contact with the capacitor contact part, and simultaneously forming a first peripheral conductive layer in contact with the peripheral circuit contact part; forming a first air gap in the bit line isolation layer, and simultaneously forming a second air gap in the peripheral gate isolation layer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes following operations. A substrate including active regions and isolation regions is provided. First trench structures are formed on the substrate, the first trench structure passing through the active region and the isolation region. Bit line contact structures are formed in the first trench structures. Bit line structures are formed on the bit line contact structures, at least part of the bit line structure being positioned in the first trench structure. Bit line protection structures are formed on the bit line structures, the bit line protection structure at least covering an upper surface of the bit line structure. Capacitor contact assemblies are formed, the capacitor contact assembly including a first capacitor contact structure and a second capacitor contact structure which covers an upper surface and part of a side wall of the first capacitor contact structure.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method of the semiconductor structure comprises: providing a substrate, comprising a polysilicon layer, a first conductive layer, a first dielectric layer, a mask layer, and a sacrificial layer sequentially formed thereon, wherein the sacrificial layer has a plurality of first trenches distributed at intervals; forming a first insulating layer on the sacrificial layer; forming a protective layer, the protective layer only covering a surface of the first insulating layer above the top surface of the sacrificial layer; removing the protective layer, part of the first insulating layer, the sacrificial layer, and part of the mask layer to form a first pattern layer; and removing part of the first dielectric layer, part of the first conductive layer, and part of the polysilicon layer by using the first pattern layer as a mask to form a BL structure.

Abstract: The present disclosure provides a phase shifter including: a first substrate and a second substrate. The first substrate includes a reference electrode and a signal electrode, and the signal electrode includes a main structure and multiple branch structures. The second substrate includes multiple patch electrodes, and the multiple patch electrodes are arranged in a one-to-one correspondence with the multiple branch structures to form multiple variable capacitors. The phase shifter has a first region, and a second region and a third region which are respectively provided on two sides of the first region; and for any two of variable capacitors located on a same side of the first region, an overlap area of patch electrode and branch structure of a variable capacitor close to the first region is greater than or equal to that of a variable capacitor away from the first region.

Abstract: The disclosure provides a liquid crystal antenna including: a first substrate; a second substrate facing the first substrate; a third substrate facing the second substrate such that the second substrate is between the first substrate and the third substrate; a liquid crystal layer between the first substrate and the second substrate; a transmission line on a surface of the first substrate adjacent to the liquid crystal layer; a ground electrode on a surface of the second substrate adjacent to the liquid crystal layer; a feeder line and a radiation patch both on a surface of the third substrate, wherein the transmission line and the ground electrode form a signal transmission circuit, and the transmission line and the liquid crystal layer form a phase shifter. In addition, the disclosure also relates to a method for manufacturing the liquid crystal antenna and an electronic device including the liquid crystal antenna.

Abstract: The present disclosure provides a phase shifter including: a first substrate and a second substrate. The first substrate includes a reference electrode and a signal electrode, and the signal electrode includes a main structure and multiple branch structures. The second substrate includes multiple patch electrodes, and the multiple patch electrodes are arranged in a one-to-one correspondence with the multiple branch structures to form multiple variable capacitors. The phase shifter has a first region, and a second region and a third region which are respectively provided on two sides of the first region; and for any two of variable capacitors located on a same side of the first region, an overlap area of patch electrode and branch structure of a variable capacitor close to the first region is greater than or equal to that of a variable capacitor away from the first region.

Abstract: A display device is provided. The display device includes a display module and an antenna module. The antenna module includes at least one antenna body for receiving a wireless signal; a signal transmission line coupled to the at least one antenna body; an antenna carrier plate having a working region and a bending region, the antenna carrier plate in the bending region is bent from a display surface to a non-display surface, so that the signal transmission line extends from the display surface to the non-display surface; an adapter circuit board on the non-display surface; and an adapter coupling the signal transmission line to the adapter circuit board to enable the adapter circuit board to be signal coupled to the at least one antenna body.

Abstract: The present application relates to a semiconductor structure and a method of manufacturing the same. The method includes: providing a substrate; forming a bitline contact hole located in the substrate, and a non-metal conductive layer with which a surface of the substrate is covered and the bitline contact hole is filled, the non-metal conductive layer provided with a first opening therein, the first opening aligned with the bitline contact hole; forming a metal conductive layer, with which a surface of the non-metal conductive layer is covered; forming an insulation layer, with which a surface of the metal conductive layer surface is covered; and etching the insulation layer, the metal conductive layer, and the non-metal conductive layer to form a bitline structure.

Abstract: A method for manufacturing a semiconductor structure includes: a substrate with a groove structure formed therein is provided; a laminated structure is formed on the substrate, which includes a first conductive material layer, a second conductive material layer and an insulating material layer from bottom up, and the first conductive material layer fills the groove structure and covers the surface of the substrate; the insulating material layer, the second conductive material layer and the first conductive material layer are sequentially etched to form a bit line structure, in which a process of etching the first conductive material layer includes a first etching stage and a second etching stage, such that a bottom width of the first pattern structure located in the groove structure is not smaller than that of the first pattern structure located outside the groove structure.

Abstract: A slot antenna and a communication device including the slot antenna are provided. The slot antenna includes: a dielectric layer having a first surface and a second surface opposite to each other, a radiation layer on the first surface of the dielectric layer and having a plurality of slots therein, and a first shielding layer on the second surface of the dielectric layer and electrically connected to the radiation layer.

Abstract: A phase shifter is provided to include: a first substrate, a second substrate, a dielectric layer, a transmission line, a ground electrode and at least one auxiliary electrode, where the first substrate and the second substrate are opposite to each other, the dielectric layer is between the first substrate and the second substrate, the transmission line is between the second substrate and the dielectric layer, the auxiliary electrode is between the first substrate and the dielectric layer, and the ground electrode is on a side of the second substrate distal to the dielectric layer; a dielectric constant of the dielectric layer changes with a voltage between the auxiliary electrode and the transmission line; an orthographic projection of the transmission line on the first substrate overlaps with an orthographic projection of the auxiliary electrode on the first substrate.

Abstract: Embodiments of the present disclosure disclose a liquid crystal display panel and a liquid crystal display apparatus having the same. The liquid crystal display panel includes a first substrate and a second substrate, the first substrate serving as an array substrate; and a polymer liquid crystal layer, the first substrate includes: a plurality of pixel electrodes in display regions, and a plurality of conductors in gaps between adjacent ones of the plurality of pixel electrodes, and the second substrate includes a common electrode; and in areas corresponding to the gaps between adjacent ones of the plurality of pixel electrodes, portions of the polymer liquid crystal layer corresponding to at least zones where the plurality of conductors are located are configured to transmit the input light from the edge-lighting type light source.

Abstract: The disclosure provides a liquid crystal antenna including: a first substrate; a second substrate facing the first substrate; a third substrate facing the second substrate such that the second substrate is between the first substrate and the third substrate; a liquid crystal layer between the first substrate and the second substrate; a transmission line on a surface of the first substrate adjacent to the liquid crystal layer; a ground electrode on a surface of the second substrate adjacent to the liquid crystal layer; a feeder line and a radiation patch both on a surface of the third substrate, wherein the transmission line and the ground electrode form a signal transmission circuit, and the transmission line and the liquid crystal layer form a phase shifter. In addition, the disclosure also relates to a method for manufacturing the liquid crystal antenna and an electronic device including the liquid crystal antenna.