Abstract: An interleaving driving method of light emitting diode array comprises: receiving image signal; converting the image signal into gray scale signals, the gray scale signals correspond to the plurality of light emitting channels, respectively, to execute multiple steps. The multiple steps include: generating a high gray scale data group and a low gray scale data group; when there is data in the high gray scale data group, drive the light emitting diode channel corresponding to the target gray scale signal during a first turn on time interval; when there is data in the low gray scale data group, drive the light emitting diode channel corresponding to the target gray scale signal during a second turn on time interval which does not overlap the first turn on time interval and a first gray scale signal and a second gray scale signal of the gray scale signals does not overlap each other.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table.

Abstract: Implementations of the present disclosure relate to a resource allocation method, a terminal device, and a network device. The method comprises: receiving first configuration information transmitted by a network device, wherein the first configuration information comprises multiple resource collections, the multiple resource collections are in one-to-one correspondence with multiple RNTIs, each of the multiple resource collections is used for indicating an available resource of a target channel, and the available resources indicated by the multiple resource collections are different; receiving target downlink control information (DCI) transmitted by the network device; and if the target DCI is scrambled according to a first RNTI among the multiple RNTIs, determining a resource used by the target channel in a first resource collection corresponding to the first RNTI.

Abstract: An electronic device includes a substrate, a semiconductor unit and an insulating layer. The semiconductor unit is disposed on the substrate. The insulating layer is disposed on the semiconductor unit, and the insulating layer includes a first portion and a second portion connected to the first portion. In a top view, the first portion partially overlaps the semiconductor unit, the second portion does not overlap the semiconductor unit, and a part of an edge of the insulating layer is irregular.

Abstract: Embodiments of this application disclose a method and for dividing geographical regions performed by a computing device. The method includes: encoding latitudes and longitudes in a first dataset to obtain a second dataset, the first dataset recording N groups of latitudes and longitudes, and the second dataset recording N region numbers, and each of the region numbers being used for representing a corresponding geographical region; obtaining a third dataset from the second dataset, the third dataset recording M groups of the region numbers, corresponding central point latitudes and central point longitudes in the geographical regions represented by the region numbers; and dividing the geographical regions represented by the M groups of region numbers into P regions according to the third dataset, each of the regions including at least one of the geographical regions represented by the corresponding group of region numbers.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: An electronic assembly is provided. The electronic assembly includes a first circuit structure including a conductive structure, a second circuit structure disposed on the first circuit structure, a plurality of electronic elements disposed on the first circuit structure, and a connecting element disposed on the first circuit layer. The connecting element is disposed between two adjacent ones of the plurality electronic elements and electrically connected to the second circuit layer and one of the two adjacent ones of the plurality of electronic elements.

Abstract: Techniques for deploying IPv6 routing are disclosed. A system, process, and/or computer program product for deploying IPv6 routing includes advertising in Border Gateway Protocol (BGP) a new address-family capability in combination with an existing address-family in a network that supports a plurality of address families, and undoing BGP filters to allow BGP routes to be exchanged at a time that a network administrator enables the new address-family capability in the network.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: Provided are a test assembly and a test tooling, including: interfaces, where one end of the interface is configured to connect a device under test, and the interfaces include a first interface and a second interface; a first three-way valve, where the first three-way valve includes a first cut-in valve, a first vent valve, and a first test valve, another end of the first interface is connected to the first cut-in valve, and the first vent valve lets in atmospheric air and is able to open and close; a second three-way valve, where the second three-way valve includes a second cut-in valve, a second vent valve, and a second test valve, another end of the second interface is connected to the second cut-in valve, and the second vent valve lets in atmospheric air and is able to open and close; and a manifold.

Abstract: A two-component polyurethane composition comprising: an aqueous dispersion comprising an emulsion polymer and a specific sulphate and/or sulfonate surfactant, and a water-dispersible polyisocyanate; the emulsion polymer with a weight average molecular weight of 70,000 g/mol or less comprising, by weight based on the weight of the emulsion polymer, greater than 0.25% of structural units of a phosphorous-containing acid monomer and/or salts thereof, greater than 15% of structural units of a hydroxy-functional alkyl (meth)acrylate, structural units of an monoethylenically unsaturated nonionic monomer, and from zero to 10% of structural units of an additional acid monomer and/or salts thereof; and a process of preparing the two-component polyurethane composition.

Abstract: A method includes performing a first deposition process to form a first graphene layer over a substrate, the first deposition process being performed under a first temperature and a first pressure; performing a second deposition process to form a second graphene layer over the first graphene layer, the second deposition process being performed under a second temperature and a second pressure, in which the first temperature is higher than the second temperature, and the first pressure is lower than the second pressure; forming a gate structure over the second graphene layer; and forming source/drain contacts on opposite sides of the gate structure and electrically connected to the first and second graphene layers.

Abstract: In an aspect, a carriage for guided autonomous locomotion may include a computing device configured to produce a safety perimeter, wherein producing further comprises receiving at least an environmental input as a function of an environmental sensor, and producing the safety perimeter as a function of the environmental input, outline at least a corrective action as a function of the safety perimeter, wherein outlining further comprises determining a required force, and outlining the at least a corrective action as a function of the safety perimeter and required force using a corrective machine-learning model, and initiate the at least a corrective action.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A color correction system and a colorimeter positioning method therefore are provided. A first color block is displayed in a first display area of a display. During the period of displaying the first color block, a first sensing value is acquired for the first color block through a sensor of a colorimeter. The first sensing value is compared with a first reference value to determine whether the first sensing value meets the first specific condition. In response to the first sensing value meeting the first specific condition, a second color block is displayed in the first display area of the display. During the period of displaying the second color block, a second sensing value is acquired for the second color block through the sensor. The second sensing value is compared with a second reference value to determine whether the second sensing value meets the second specific condition.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.