Abstract: Disclosed are methods of navigating a robot in a crowd involving mapping a local crowd and applying a clustering algorithm that reconstructs a crowd-flow map capturing movement patterns of pedestrians in the local crowd; using a flow-matching metric, localizing the robot in the crowd-flow map; and following a movement pattern in the crowd-flow map using a hierarchical crowd-driven planning on a long time horizon and a short time horizon.

Abstract: A speech recognition method and related products are provided. The method includes acquiring a to-be-recognized speech and a configured hot word library; determining, based on the to-be-recognized speech and the hot word library, an audio-related feature used at a current decoding time instant; determining, based on the audio-related feature, a hot word-related feature used at the current decoding time instant from the hot word library; and determining, based on the audio-related feature and the hot word-related feature, a recognition result of the to-be-recognized speech at the current decoding time instant.

Abstract: An electromechanical sensor and a method of sensing an object or a tactile input using the sensor. The sensor includes: a base provided with a magnetic sensor arranged to detect a change in magnetic flux at the position of the magnetic sensor; a flexible film adjacent to the magnetic sensor; and a magnetic element provided on the flexible film; wherein the magnetic element is arranged to move relative to the magnetic sensor when the flexible film is reversibly deformed by an external force applied to the flexible film.

Abstract: A method and a system for end-to-end modeling are provided. The method includes: determining a topological structure of a target-based end-to-end model, where the topological structure includes an input layer, an encoding layer, an code enhancement layer, a filtering layer, a decoding layer and an output layer; the code enhancement layer adds information of a target unit to a feature sequence outputted by the encoding layer, the filtering layer filters a feature sequence added with the information of the target unit; collecting multiple pieces of training data; and training parameters of the target-based end-to-end model by using the multiple pieces of the training data.

Abstract: The present disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes: a substrate doped with a first ion, a deep trench structure disposed in the substrate, a barrier doped region disposed on a top of the substrate and the deep trench structure, a first epitaxial layer disposed on the barrier doped region, a body region disposed in the first epitaxial layer, a source region disposed in the body region, a gate structure disposed in the first epitaxial layer, and a collector region disposed at a bottom of the substrate. By means of the semiconductor structure, performance of an insulated gate bipolar transistor can be improved.

Abstract: An IGBT device and a method for manufacturing it, the device includes a super junction structure that has several N-type pillars and P-type pillars arranged alternately; a cell unit that is located in an N-type epitaxial layer, and the N-type epitaxial layer is located above the N-type substrate; each cell unit includes a trench gate, a P-type body region, and a source region; an N-type carrier injection layer, the N-type carrier injection layer is located in the N-type epitaxial layer, and the N-type carrier injection layer is spaced apart from the N-type substrate by the N-type epitaxial layer; the bottom of the P-type body region is located in the N-type carrier injection layer; and a collector region that is located at the bottom of the N-type substrate.

Abstract: A method for manufacturing an IGBT device includes: forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate; performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and performing nitrogen annealing processing on the substrate.

Abstract: Disclosed are methods of navigating a robot in a crowd involving mapping a local crowd and applying a clustering algorithm that reconstructs a crowd-flow map capturing movement patterns of pedestrians in the local crowd; using a flow-matching metric, localizing the robot in the crowd-flow map; and following a movement pattern in the crowd-flow map using a hierarchical crowd-driven planning on a long time horizon and a short time horizon.

Abstract: A smart walking assistance device with a walker frame having generally vertical sides and an intersecting front. Wheels located at both ends of a bottom edge of the sides. A soft robotic sensing handle extends in a C shape along the upper edges of the sides and front. The sensing handle has multiple contiguous air filled chambers, each containing a pressure sensor for producing a pressure signal representing the pressure within the chamber. A microcontroller unit receives the pressure signals from the pressure sensors of the handle chambers and determines the status of at least one of the device and a user of the device based on the pressure signals. A stabilization mechanism is driven by the microcontroller so as to stabilize the walker in response to the determined status of at least one of the walker and the user.

Abstract: A speech recognition error correction method and device, and a readable storage medium are provided. The method includes: acquiring to-be-recognized speech data and a first recognition result of the speech data, re-recognizing the speech data with reference to context information in the first recognition result to obtain a second recognition result, and determining a final recognition result based on the second recognition result. In the method, the speech data is re-recognized with reference to context information in the first recognition result, which fully considers context information in the recognition result and the application scenario of the speech data. If any error occurs in the first recognition result, the first recognition result is corrected based on the second recognition. Therefore, the accuracy of speech recognition can be improved.

Abstract: A method, an apparatus and a device for converting a whispered speech, and a readable storage medium are provided. The method is implemented based on the whispered speech converting model. The whispered speech converting model is trained in advance by using recognition results and whispered speech training acoustic features of whispered speech training data as samples and using normal speech acoustic features of normal speech data parallel to the whispered speech training data as sample labels. A whispered speech acoustic feature and a preliminary recognition result of whispered speech data are acquired, then the whispered speech acoustic feature and the preliminary recognition result are inputted into a preset whispered speech converting model to acquire a normal speech acoustic feature outputted by the model. In this way, the whispered speech can be converted to a normal speech.

Abstract: An electromechanical sensor and a method of sensing an object or a tactile input using the sensor. The sensor includes: a base provided with a magnetic sensor arranged to detect a change in magnetic flux at the position of the magnetic sensor; a flexible film adjacent to the magnetic sensor; and a magnetic element provided on the flexible film; wherein the magnetic element is arranged to move relative to the magnetic sensor when the flexible film is reversibly deformed by an external force applied to the flexible film.

Abstract: A method for manufacturing an IGBT device includes: forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate; performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and performing nitrogen annealing processing on the substrate.

Abstract: A method for manufacturing an IGBT device includes: forming a cell structure of the IGBT device in a substrate; forming front metal layers on the substrate; thinning the substrate; forming a collector region on the back of the substrate; forming back metal layers on the back of the substrate; and forming target metal on the front and back of the substrate via electroless plating processes.

Abstract: An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.

Abstract: A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Abstract: A method for manipulating a deformable object includes determining respective 3D position of one or more markers on the deformable object held by a robotic manipulator; determining a deformation model of the deformable object by mapping movement of the robotic manipulator and movement of one or more markers; and controlling the robotic manipulator based on the determined deformation model to manipulate the deformable object so as to move the one or more markers into respective target position.

Abstract: A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Abstract: An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and a source region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.