Abstract: An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.

Abstract: A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Abstract: A method for manipulating a deformable object includes determining respective 3D position of one or more markers on the deformable object held by a robotic manipulator; determining a deformation model of the deformable object by mapping movement of the robotic manipulator and movement of one or more markers; and controlling the robotic manipulator based on the determined deformation model to manipulate the deformable object so as to move the one or more markers into respective target position.

Abstract: A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Abstract: An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and a source region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.

Abstract: A method, an apparatus and a device for converting a whispered speech, and a readable storage medium are provided. The method is implemented based on the whispered speech converting model. The whispered speech converting model is trained in advance by using recognition results and whispered speech training acoustic features of whispered speech training data as samples and using normal speech acoustic features of normal speech data parallel to the whispered speech training data as sample labels. A whispered speech acoustic feature and a preliminary recognition result of whispered speech data are acquired, then the whispered speech acoustic feature and the preliminary recognition result are inputted into a preset whispered speech converting model to acquire a normal speech acoustic feature outputted by the model. In this way, the whispered speech can be converted to a normal speech.

Abstract: A method and a system for end-to-end modeling are provided. The method includes: determining a topological structure of a target-based end-to-end model, where the topological structure includes an input layer, an encoding layer, an code enhancement layer, a filtering layer, a decoding layer and an output layer; the code enhancement layer adds information of a target unit to a feature sequence outputted by the encoding layer, the filtering layer filters a feature sequence added with the information of the target unit collecting multiple pieces of training data; and training parameters of the target-based end-to-end model by using the multiple pieces of the training data.

Abstract: A method for manipulating a deformable object includes determining respective 3D position of one or more markers on the deformable object held by a robotic manipulator; determining a deformation model of the deformable object by mapping movement of the robotic manipulator and movement of one or more markers; and controlling the robotic manipulator based on the determined deformation model to manipulate the deformable object so as to move the one or more markers into respective target position.

Abstract: A method and an apparatus for browsing an object list are disclosed. The method includes providing an object list, wherein the object list includes a first region and a second region, multiple first-level categories are displayed in the first region, and multiple second-level categories are displayed in the second region; obtaining a status of the object list, and determining whether the status of the object list meets a preset condition; and performing a switching control on a second-level category displayed in the second region based on a status of the second-level category displayed in the second region upon determining that the status of the object list meets the preset condition.

Abstract: A method and an apparatus for browsing an object list are disclosed. The method includes providing an object list, wherein the object list includes a first region and a second region, multiple first-level categories are displayed in the first region, and multiple second-level categories are displayed in the second region; obtaining a status of the object list, and determining whether the status of the object list meets a preset condition; and performing a switching control on a second-level category displayed in the second region based on a status of the second-level category displayed in the second region upon determining that the status of the object list meets the preset condition.

Abstract: A lock assembly structure includes a lock base, an actuating component, a locking component and a lock sheet. By using the actuating component to drive the locking component to be moved with respect to the lock base and the lock sheet movable with respect to the lock base, the lock sheet may be ensured to be maintained in the closed position or be out of the closed position. Wherein, the actuating component is a hydraulic or pneumatic actuating component, thereby the sparks that may be generated by the motor actuator during operation may be avoided. The lock assembly structure further includes a blocker sheet, which is movable with respect to the lock base. When the actuating component is functioned improperly, the lock sheet may also be ensured to be maintained in the closed position or be out of the closed position by changing the position of the blocker sheet.

Abstract: Provided are methods for forming a reactive S-nitroso thioacid (NTA), comprising nitrosation of a thioacid with a nitrosation reagent. Also provided are methods for: acylating a nucleophile including selective acylation with a high degree of selectivity toward amines over hydroxyls; amide or peptide bond formation; forming a dipeptide or polypeptide; and peptide coupling/ligation, comprising use of thioacid and amine starting materials, wherein the reactions are mediated by very reactive S-nitroso thioacid (NTA) intermediates enabling extremely fast reactions under mild conditions, providing for broad applications.

Abstract: A parasitic lateral PNP transistor is disclosed, in which, an N-type implanted region formed in each of two adjacent active regions forms a base region; a P-type doped polysilicon pseudo buried layer located under a shallow trench field oxide region between the two active regions serves as an emitter; and a P-type doped polysilicon pseudo buried layer located under each of the shallow trench field oxide regions on the outer side of the active regions serves as a collector region. The transistor has a C-B-E-B-C structure which alters the current path in the base region to a straight line, which can improve the current amplification capacity of the transistor and thus leads to a significant improvement of its current gain and frequency characteristics, and is further capable of reducing the area and increasing current intensity of the transistor. A manufacturing method of the parasitic lateral PNP transistor is also disclosed.

Abstract: A method of filling shallow trenches is disclosed. The method includes: successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed in; etching the second oxide layer to form inner sidewalls with an etchant which has a high etching selectivity ratio of the second oxide layer to the first oxide layer; growing a high-quality pad oxide layer by thermal oxidation after the inner sidewalls are removed; and filling the trenches with an isolation dielectric material. By using this method, the risk of occurrence of junction spiking and electrical leakage during a subsequent process of forming a metal silicide can be reduced.

Abstract: Provided are methods for forming a reactive S-nitroso thioacid (NTA), comprising nitrosation of a thioacid with a nitrosation reagent. Also provided are methods for: acylating a nucleophile including selective acylation with a high degree of selectivity toward amines over hydroxyls; amide or peptide bond formation; forming a dipeptide or polypeptide; and peptide coupling/ligation, comprising use of thioacid and amine starting materials, wherein the reactions are mediated by very reactive S-nitroso thioacid (NTA) intermediates enabling extremely fast reactions under mild conditions, providing for broad applications.