Abstract: A node of a radio access network (22) communicates with a wireless terminal (261) over a radio interface and sends to the wireless terminal (261) an indication (62) which specifies, for device-to-device (D2D) communications with another wireless terminal (262), whether the wireless terminal (261) is to use network-allocated radio resources or radio resources which are selected by the wireless terminal.

Abstract: As a result of the selection/reselection operation, a wireless terminal (26) selects the high priority candidate frequency for use in the device-to-device (D2D) communications. During the cell selection/reselection operation, the wireless terminal (26) is required to consider selection/reselection candidate frequencies at which the wireless terminal (26) cannot receive or transmit device-to-device (D2D) signals to be of low priority candidate frequencies when the wireless terminal (26) is capable of device-to-device (D2D) communications and is receiving or transmitting, or anticipating receiving or transmitting, device-to-device (D2D) signals on device-to-device (D2D) supported frequencies.

Abstract: A method in a wireless terminal (261) which is in wireless communications with a radio access node (22) over a radio interface (24) comprises using a time alignment timer (50H) to determine how long the wireless terminal (261) considers a serving cell associated with a timing advance group to be time uplink aligned. The wireless terminal (261) does not perform device-to-device (D2D) communications with another wireless terminal (262) using network-allocated resources of the serving cell when the time alignment timer (50H) expires. Upon expiration of the time alignment timer (50H) the wireless terminal (261) uses wireless terminal autonomous selected radio resources for the device-to-device (D2D) communications with the another wireless terminal (262).

Abstract: A hybrid silicon/III-V compound semiconductor laser device comprising a silicon substrate including a channel configured for silicide line formation as a function of current through the channel; so that the temperature of the laser device is adjusted to a predetermined level.

Abstract: Methods, systems, and apparatus, including computer program products, for aligning user interface elements arranged in multiple columns in a user interface. In one aspect, a method includes identifying a group of columns in a user interface, where each column in the group includes one or more user interface elements arranged in a sequence from a top of the column to a bottom of the column; comparing heights of first sequences of one or more user interface elements in a first column to heights of second sequences of one or more user interface elements in a second column; and adjusting the heights of the first sequences to align the first sequences with the second sequences by adjusting the heights of user interface elements in the first sequences, where adjustments to each user interface element in the first sequences are each less than a threshold adjustment value.

Abstract: A semiconductor device or an integrated circuit formed on a substrate with shunt disposed on the substrate in parallel with the device or circuit and designed to form a closed circuit or discharge path when the device is subjected to an electrostatic discharge pulse.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: An automatic corner lift-off apparatus for a polarizer of a liquid crystal display (LCD) panel is disclosed, which is suitable for use in a process of removing a polarizer during manufacturing of an LCD panel and comprises: a front clip, comprising a long arm and a short arm which intersect with each other to substantially form an “L” shape; a back clip, spaced apart from the front clip and being capable of cooperating with the front clip to perform a clipping action; and at least one sensor disposed on the front clip or the back clip, being configured to sense whether the polarizer has been successfully lifted off. Thereby, the present disclosure allows for fully automatic polarizer removing operations and can reduce work-related injuries and improve the success ratio of and efficiency of removing the polarizer.

Abstract: An automatic corner lift-off apparatus for a polarizer of a liquid crystal display (LCD) panel is disclosed, which is suitable for use in a process of removing a polarizer during manufacturing of an LCD panel and comprises: a front clip, comprising a long arm and a short arm which intersect with each other to substantially form an “L” shape; a back clip, spaced apart from the front clip and being capable of cooperating with the front clip to perform a clipping action; and at least one sensor disposed on the front clip or the back clip, being configured to sense whether the polarizer has been successfully lifted off. Thereby, the present disclosure allows for fully automatic polarizer removing operations and can reduce work-related injuries and improve the success ratio of and efficiency of removing the polarizer.

Abstract: A fan structure includes a hub and at least one set of blades connected to and extending away from the hub, each of the blades having a plurality of steps with a height difference formed away from the periphery of the hub, the height of the inside one of the steps higher than that of the outside one of the steps, thereby providing a disturbed flow-guiding effect so as to enhance the air pressure and the air flow of the wind flow field.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: This invention provides a transition metal complex of formula MXY2Z and a manufacturing method thereof, wherein M is selected from iron, ruthenium, and osmium; X represents a ligand shown in formula (II) wherein R1 and R1? are independently selected from COOH, PO3H2, PO4H2, SO3H2, SO4H2, and derivatives thereof; Y is selected from H2O, Cl, Br, CN, NCO, NCS, and NCSe; Z represents a bidentate ligand having at least two fluorinated chains. In addition, this invention also provides photovoltaic cells and a manufacturing method thereof.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: An automatic corner lift-off apparatus for a polarizer of a liquid crystal display (LCD) panel is disclosed, which is suitable for use in a process of removing a polarizer during manufacturing of an LCD panel and comprises: a front clip, comprising a long arm and a short arm which intersect with each other to substantially form an “L” shape; a back clip, spaced apart from the front clip and being capable of cooperating with the front clip to perform a clipping action; and at least one sensor disposed on the front clip or the back clip, being configured to sense whether the polarizer has been successfully lifted off. Thereby, the present disclosure allows for fully automatic polarizer removing operations and can reduce work-related injuries and improve the success ratio of and efficiency of removing the polarizer.