Abstract: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit for light-sensing; a driving transistor for driving the diode during the display phase and serving as a source follower in the sensing phase; first to sixth transistors, applied to the gates of the first to sixth transistors respectively so that the pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase and storing the charge accumulated by the diode in the sensing phase.

Abstract: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a sub-pixel circuit, each sub-pixel circuit including: a diode, configured to be in a forward-biasing state during a displaying phase of the sub-pixel circuit for emitting light and configured to be in a reverse-biasing state for sensing light of the sub-pixel circuit in a sensing phase; a driving transistor for driving the diode during the display phase; first to sixth transistors, gate control signals are applied to gates of the first to sixth transistors respectively, so that the sub-pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase, wherein in the sensing phase the diode generates a photocurrent to an operational amplifier, such that the operational amplifier outputs a photocurrent output signal.

Abstract: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a displaying phase of the pixel circuit for emitting light and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit so as to generate a sensing voltage; a first circuit by applying gate control signals to each pixel circuit, so that each pixel circuit switches between the display phase and the sensing phase, respectively; and a second circuit including a plurality of readout circuits, each readout circuit includes an operational amplifier for reading out the sensing voltage in the sensing phase.

Abstract: The present invention is related to a display device, including: a display panel having a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit to generate a sensing voltage; a driving transistor for driving the diode during the display phase; a readout transistor, with a gate receiving the sensing voltage during the sensing phase to serve as a source follower; first to seventh transistors, gate control signals applied to the gates of the first to seventh transistors respectively so that the pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase.

Abstract: A light sensor and a ranging method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit operates the diode in a Geiger mode or an avalanche linear mode. The control circuit includes a time-to-digital converter, and the time-to-digital converter includes a counting circuit. The counting circuit includes a plurality of counting units. When the time-to-digital converter receives a sensing signal provided by the sensing sub-pixel, the control circuit generates a plurality of count values according to the sensing signal through the counting units of the counting circuit, where the count values are histogram data corresponding to a distance sensing result.

Abstract: An output stage circuit including a current source circuit, a bias circuit, and an output circuit is provided. The bias circuit is coupled between the current source circuit and a ground terminal voltage. The output circuit includes a first transistor, a second transistor, a third transistor, and a load circuit. A control terminal of the first transistor is coupled to the bias circuit. The load circuit is coupled to a second terminal of the first transistor. A second terminal of the second transistor is coupled to a first terminal of the first transistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor.

Abstract: The present invention relates to an image sensing structure, including: a sensing circuit, a storage circuit and a processing circuit. The sensing circuit is used to generate multiple sensing signals in different periods; the storage circuit is used to store the sensing signals. The storage circuit sequentially outputs a first sensing signal of a target object in a first period and a second sensing signal of the target object in a second period to the processing circuit. The processing circuit performs dynamic event detection processing through the first sensing signal and the second sensing signal. Also, the present invention relates to an image sensing device including the image sensing structure.

Abstract: The present invention relates to an image sensing device comprising: an image sensing array and an image processing circuit. The image sensing array includes sub-array regions used to obtain sensing signals having different exposure period, wherein in a main frame period, the sensing signals include static sensing signals and dynamic sensing signals, the number of the static sensing signals and the dynamic sensing signals are any different positive integers, the static sensing signals are generated at a first frame rate for a first exposure period, and the dynamic sensing signal are generated at a second frame rate for a second exposure period. The image processing circuit analyzes the static sensing signals and the dynamic sensing signals, outputs sub-frames of the sensing signals having the same frame rate in the sub-array region, and fuses the sub-frames each having a different frame rate by a specific ratio to generate a main frame.

Abstract: The present invention relates to an image sensing device, including: an image sensing array, a conversion unit, and a processing circuit. The image sensing array is used to generate sensing signals of different periods. The conversion unit is used to convert the sensing signals from analog to digital. The processing circuit is used to generate a frame during an image capturing operation. The image sensing array includes a plurality of sensing sub-pixels, and the sensing sub-pixels have a sensing circuit and a storage circuit. The sensing circuit generates the sensing signals and sequentially stores the sensing signal in the storage circuit. The storage circuit sequentially outputs the sensing signals to the conversion unit.

Abstract: Provided is an image sensor circuit, including a pixel array and a plurality of different control circuits. The pixel array comprises a plurality of pixel circuit groups arranged in an array. Each pixel circuit group comprises a plurality of pixel circuits that generate corresponding sensitivity values over exposure duration. The pixel circuits include a first quantity of first pixel circuits, and a second quantity of second pixel circuits. The plurality of different control circuits are respectively coupled to different pixel circuits to control the exposure duration thereof with different transmission signals. The different control circuits are also set to control different pixel circuits to output photo-sensed values at different frame rates. The image sensor circuit periodically generates the pixel value of each pixel circuit group according to first and second exposure durations, first and second frame rates, and first and second light sensitivity values of each pixel circuit group.

Abstract: Disclosed are an image sensor circuit and an image sensor device including the image sensor circuit device. The image sensor circuit includes a pixel array formed by a plurality of pixel circuits. Each pixel circuit includes a first sub-pixel circuit, a first control circuit, a second sub-pixel circuit and a second control circuit. The first control circuit may sense light in a first wavelength range and control the first sub-pixel circuit to output a first output information at a first frame rate. The second control circuit may sense light in a second wavelength range and control the second sub-pixel circuit to output a second output information at a second frame rate. The first frame rate is higher than the second frame rate, and the first wavelength range does not overlap with the second wavelength range.

Abstract: The invention relates to an image sensing device and an image sensing method thereof. The image sensing device includes: an image sensing array and an image processing circuit. The image sensing array generates multiple pixel data, and the pixel data includes a first pixel data and a second pixel data. The first pixel data is generated by exposing for a first exposure time, the second pixel data is generated by exposing for a second exposure time, and the first exposure time is shorter than the second exposure time. The image processing circuit executes an automatic exposure convergence operation with the first pixel data to generate new exposure parameters for the automatic exposure convergence operation. The second exposure time is adjusted according to the new exposure parameters, so that the second pixel data is pixel data with changed exposure time.

Abstract: The present invention relates to an image sensing device comprising: an image sensing array and an image processing circuit. The image sensing array includes sensing units, and the sensing units respectively generate multiple pieces of pixel data. The multiple pieces of pixel data are generated according to different frame rates under different exposure periods, and include a first pixel data of a first subframe and a second pixel data of a second subframe. The first pixel data is generated by exposing a first exposure period for a first frame rate, and the second pixel data is generated by exposing a second exposure period for a second frame rate. The first frame rate is less than the second frame rate. The first exposure period is greater than the second exposure period, and multiple pieces of the second pixel data are generated during one image capturing operation.

Abstract: An image sensor and an image sensing method are provided. The image sensor includes a first pixel circuit, a second pixel circuit, a ramp signal generating circuit, a comparator, and a signal processing circuit. The first pixel circuit has a first floating diffusion node. The second pixel circuit has a second floating diffusion node. The ramp signal generating circuit respectively provides a first ramp signal and a second ramp signal to the first floating diffusion node and the second floating diffusion node during a dark sun detection period. The comparator receives a first node voltage of the first floating diffusion node and a second node voltage of the second floating diffusion node. The signal processing circuit determines whether to output an output signal and determines whether to overwrite a digital value corresponding to a sensing signal according to whether the comparator is triggered.

Abstract: An image sensor and an operation method thereof are provided. The image sensor includes a pixel circuit and a column readout circuit. The pixel circuit includes a pixel unit, a transfer transistor, a reset transistor, a readout transistor and a selection transistor. The column readout circuit includes a first circuit node and a second circuit node. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to a first circuit node, and a second terminal of the first select transistor is coupled to a second circuit node.

Abstract: Disclosed are a chip with automatic clock signal correction and an automatic correction method. The chip includes a transmission interface, an oscillator and a correction logic circuit. The transmission interface provides a first clock signal. The oscillator generates a second clock signal. The correction logic circuit is coupled to the oscillator and the transmission interface, and performs correction operation to count the first clock signal to generate a first clock count value, and count the second clock signal to generate a second clock count value. When the first clock count value is equal to the first count target value, the correction logic circuit stops counting, and calculates a correction value based on the second clock count value and the second count target value. The correction logic circuit outputs the correction value to the oscillator, and the oscillator corrects a frequency of the second clock signal according to the correction value.

Abstract: Disclosed are an image sensor and an image sensing method. The image sensor includes a first pixel circuit. The first pixel circuit includes a first driving transistor, a first selection transistor, a first transfer transistor, a first reset transistor and a first sensing unit. A control terminal of the first selection transistor is used for receiving a first selection signal. A control terminal of the first transmitting transistor is used for receiving a first transmitting signal. The image sensing method includes the following steps: receiving a first reset signal during a reset period through a control terminal of the first reset transistor; and receiving a first ramp signal during a sensing period through a control terminal of the first reset transistor.

Abstract: An image sensor, a level shifter circuit, and an operation method thereof are provided. The image sensor includes a pixel circuit and a pixel driving circuit. The pixel driving circuit includes first, second, third, fourth, fifth, and sixth transistors. A first terminal of the first transistor is coupled to a first voltage. A first terminal of the second transistor is coupled to the first voltage, and a control terminal of the second transistor is coupled to a control terminal of the first transistor and a second terminal of the first transistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor, and a second terminal of the third transistor is coupled to a ground voltage. A first terminal of the fourth transistor is coupled to a second terminal of the second transistor and an output terminal.

Abstract: An image sensor and an operation method thereof are provided. The image sensor includes a first pixel circuit and a ramp signal generator. The first pixel circuit includes a first pixel unit; a first transfer transistor coupled to the first pixel unit and a first floating diffusion node; a first readout transistor coupled to the first floating diffusion node; a first ramp capacitor coupled to the first floating diffusion node and receiving a first ramp signal; and a first reset transistor coupled to the first floating diffusion node and receiving a reset signal. The ramp signal generator is coupled to the first ramp capacitor and configured to provide the first ramp signal. A voltage range or a counting result of the pixel circuit during at least one of a reset period and a readout period has an offset.

Abstract: A driver chip is provided. The driver chip includes a light-emitting module and a wafer substrate. The light-emitting module has multiple pins. The wafer substrate has a first surface and a second surface. The wafer substrate includes a photodiode, an image sensing circuit, and a light-emitting driving circuit. The photodiode is disposed on the second surface of the wafer substrate. The image sensing circuit is disposed in the wafer substrate and is electrically connected to the photodiode to drive the photodiode. The light-emitting driving circuit is disposed in the wafer substrate, and is electrically connected to the multiple pins of the light-emitting module via multiple connection units on the first surface of the wafer substrate to drive the light-emitting module.