Abstract: A method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate is described. Utilizing the character of the red and the blue photoresist having a non-overlapping transmittance region in the visible light region, a black matrixes consisting of overlapping red and blue photoresist on control devices are used to prevent the photo current occurring in the off state of the control devices. In addition, three different color photoresist plus another-color photoresist are overlapped to form spacers on metal lines.

Abstract: A method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate is described. Utilizing the character of the red and the blue photoresist having a non-overlapping transmittance region in the visible light region, a black matrixes consisting of overlapping red and blue photoresist on control devices are used to prevent the photo current occurring in the off state of the control devices. In addition, three different color photoresist plus another color photoresist are overlapped to form spacers on metal lines.

Abstract: An LCD panel testing method. The method comprises forming jump lines in a predetermined region on the substrate between the signal lines via mask design when forming TFT LCD arrays, and thus forming a plurality of signal-line groups each with two signal lines coupled by the jump lines. Thereupon, an array tester sequentially tests two pixels corresponding to the signal lines in the signal groups. If one of the feedback signals from the signal groups does not meet a predetermined standard, it is determined that one or both pixels in the signal group are defective. The defective pixel or pixels are then identified using an electronic microscope to test two pixels at the same time. In this way, the number of probe pins and tests performed is halved. The probe pin size is also thus less restrictive due to larger probe pin intervals. Consequently, yield is greatly increased.

Abstract: A process for forming an in-plane switching mode liquid crystal display (IPS-LCD), which defines pixel portions of the common and data electrodes by the same photo-masking and lithography procedure, is disclosed. Accordingly, the misalignment can be avoid. An in-plane switching mode liquid crystal display (IPS-LCD) is also disclosed. The IPS-LCD includes a storage capacitor consisting of storage-capacitor portions of the common and data electrode structures, which is disposed outside the pixel region so as to enhance the aperture ratio of the pixel region.

Abstract: A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurality of openings each of which has an undercut profile are formed in the gate insulating layer and the protection layer. Then, a transparent conductive layer is formed over the substrate. One of the two parts separated is located in a bottom of the opening and the other is on the protection layer, such that two parts of the transparent conductive layer disconnect and no junction there between occurs. The part of the transparent conductive layer in the bottom of the opening is referred to as a transparent pixel electrode. The part of the transparent conductive layer on the protection layer is connected to a common metal line to form a transparent common electrode.

Abstract: A repair structure for repairing data lines and scan lines comprised in a thin film transistor-liquid crystal display (TFT-LCD) is provided.

Abstract: A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurality of openings each of which has an undercut profile are formed in the gate insulating layer and the protection layer. Then, a transparent conductive layer is formed over the substrate. One of the two parts separated is located in a bottom of the opening and the other is on the protection layer, such that two parts of the transparent conductive layer disconnect and no junction there between occurs. The part of the transparent conductive layer in the bottom of the opening is referred to as a transparent pixel electrode. The part of the transparent conductive layer on the protection layer is connected to a common metal line to form a transparent common electrode.

Abstract: A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurality of openings each of which has an undercut profile are formed in the gate insulating layer and the protection layer. Then, a transparent conductive layer is formed over the substrate. One of the two parts separated is located in a bottom of the opening and the other is on the protection layer, such that two parts of the transparent conductive layer disconnect and no junction there between occurs. The part of the transparent conductive layer in the bottom of the opening is referred to as a transparent pixel electrode. The part of the transparent conductive layer on the protection layer is connected to a common metal line to form a transparent common electrode. The transparent pixel electrode disconnects to but overlaps the protection layer.

Abstract: A process is provided for repairing a defect applied in producing a liquid crystal display, wherein the liquid crystal display includes a repair circuit structure, and at least one color filter and a liquid crystal formed on a front thereof. The process includes steps of (a) providing a laser having a wavelength of infrared spectrum, and (b) welding the repair circuit from a back of the liquid crystal display by the laser to repair the defect.

Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By forming a pixel electrode layer before a gate metal layer, a remaining portion of the gate metal layer surrounding the pixel electrode can function as a black matrix after properly patterning and etching the gate metal layer. The in-situ black matrix exempts from an additional step of providing a black matrix and solves the problem in alignment.

Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

Abstract: A method of fabricating cup shape cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells is disclosed. The cup shape capacitor shape is achieved by first depositing a first polysilicon layer on a silicon substrate; a third dielectric layer is then formed overlaying the first polysilicon layer, and defined third dielectric crowns by the conventional lithography and etching techniques; a second polysilicon layer is deposited overlaying the third dielectric crowns and first polysilicon layer; the first polysilicon and second polysilicon layers are then vertically anisotropically etchback to define storage nodes of the cylindrical capacitors; the third dielectric crowns are removed; finally, the capacitor dielectric layer and the polysilicon top plate of the capacitor are formed to complete the cup shape cylindrical capacitor formation for high density DRAM applications.

Abstract: The present invention relates to an LCD testing method. The method comprises forming jump lines in a predetermined region on the substrate between the signal lines via mask design when forming TFT LCD arrays, and thus forming a plurality of signal-line groups each with two signal lines coupled by the jump lines. Thereupon, an array tester sequentially tests two pixels corresponding to the signal lines in the signal groups. If one of the feedback signals from the signal groups does not meet a predetermined standard, it is determined that one or both pixels in the signal group are defective. The defective pixel or pixels are then identified using an optical apparatus such as an electronic microscope having a scope capable of testing two pixels at the same time. In this way, the number of probe pins and tests performed is halved. The probe pin size is also thus less restrictive due to larger probe pin intervals. Consequently, yield is greatly increased.

Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

Abstract: A repair structure for repairing data lines and scan lines comprised in a thin film transistor-liquid crystal display (TFT-LCD) is provided.

Abstract: A repair structure co-constructed with a storage capacitance in a pixel unit of a thin film transistor-liquid crystal display for repairing defects of said thin film transistor-liquid crystal display is provided. The repair structure includes a first conducting structure as a first electrode of the storage capacitance, an insulating structure formed on the first conducting structure to be a dielectric material of the storage capacitance, a wrapped conducting structure wrapped in the insulating structure, and a second conducting structure as a second electrode of the storage capacitance, wherein when the storage capacitance is welded, the defects are repaired by the wrapped conducting structure.

Abstract: A simplified process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By forming and patterning a conductive layer overlying a TFT unit, a data line, a first connection line between the TFT unit and the data line, and a second connection line between the TFT unit and a pixel electrode can be simultaneously formed in the forming and patterning step. Furthermore, after a passivation layer is applied to protect the TFT matrix, an isolation window area, a contact hole and a TAB window can be created in a single patterning step. Therefore, masking steps can be reduced so as to simplify the process. On the other hand, owing to the first connection line for connecting the TFT unit and the scan line is of the same material as the scan line, the resistivity of the connection line is inherently low. Therefore, a TFTLCD of a large area can be made according to this process.

Abstract: A process is provided for repairing a defect applied in producing a liquid crystal display, wherein the liquid crystal display includes a repair circuit structure, and at least one color filter and a liquid crystal formed on a front thereof. The process includes steps of (a) providing a laser having a wavelength of infrared spectrum, and (b) welding the repair circuit from a back of the liquid crystal display by the laser to repair the defect.

Abstract: A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.

Abstract: A process for forming an in-plane switching mode liquid crystal display (IPS-LCD), which defines pixel portions of the common and data electrodes by the same photo-masking and lithography procedure, is disclosed. Accordingly, the misalignment can be avoid. An in-plane switching mode liquid crystal display (IPS-LCD) is also disclosed. The IPS-LCD includes a storage capacitor consisting of storage-capacitor portions of the common and data electrode structures, which is disposed outside the pixel region so as to enhance the aperture ratio of the pixel region.