Abstract: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

Abstract: Systems and methods are disclosed to enable fast readout from an image sensor to support pixel-wise conversion gain selection for high dynamic range imaging. In embodiments, an image sensor integrated circuit performs the pixel-wise gain selection with its readout circuitry, so that the image sensor outputs pixels with only the selected gain option. In this manner, the image sensor is able to achieve faster frame rates and lower power consumption. Depending on the embodiment, the conversion gain may be selected by the readout logic, an image signal processor, or an auto-exposure engine. The gain selection may be made based on a previous image captured by the camera or other pixels in the same image. The image signal processor may interpolate a high-gain and a low-gain portion of the image to obtain full resolution images in the two gain options, and merge the two to obtain the final image.

Abstract: A sub-ranging programmable gain amplifier resolves an incoming signal into one of multiple amplitude sub-ranges and dynamically steps down the PGA output according to the identified sub-range.

Abstract: Integrated-circuit imagers selectively multi-sample pixel array outputs according to luminance level indicated by an initial sample, avoiding the additional power/time required for multi-sampling in high-luminance, shot-noise-dominated conditions and, conversely, multi-sampling in readout-noise-dominated low-luminance conditions.

Abstract: Row-by-row pixel read-out is executed concurrently within respective clusters of pixels of a pixel array, alternating the between descending and ascending progressions in the intra-cluster row readout sequence to reduce temporal skew between neighboring pixel rows in adjacent clusters.

Abstract: Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

Abstract: An amplifier transistor within an image-sensor pixel is implemented upside down relative to conventional orientation such that a substrate-resident floating diffusion node of the pixel forms the gate of the amplifier transistor—achieving increased pixel conversion gain by eliminating the conventional metal-layer interconnection between the floating diffusion node and amplifier-transistor gate and concomitant parasitic capacitance.

Abstract: Correlated double sampling column-level readout of an image sensor pixel may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (I) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

Abstract: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

Abstract: Row-by-row pixel read-out is executed concurrently within respective clusters of pixels of a pixel array, alternating the between descending and ascending progressions in the intra-cluster row readout sequence to reduce temporal skew between neighboring pixel rows in adjacent clusters.

Abstract: A sensing device includes a light source to emit light, a light sensor to detect reflection of the emitted light and distance determination circuitry responsive to reflected-light detection within the light sensor. The light sensor includes a photodetector having a photocharge storage capacity in excess of one electron and an output circuit that generates an output signal responsive to light detection within the photodetector with sub-hundred nanosecond latency. The distance determination circuitry measures an elapsed time based on transition of the output signal in response to photonic detection within the photodetector and determines, based on the elapsed time, a distance between the sensing device and a surface that yielded the reflection of the emitted light.

Abstract: Disclosed herein are image apparatuses comprising a frontside surface, a backside surface, a storage region (e.g., a storage node or a floating diffusion node), the storage region being situated closer to the frontside surface than to the backside surface, a storage well situated between the backside surface and the storage region, and a doping region situated between the storage region and the storage well. An impurity type of the doping region is opposite an impurity type of the storage well. A lateral area of the storage well is greater than or equal to a lateral area of the storage region, and no portion of a lateral perimeter of the storage region extends outside of a lateral perimeter of the storage well.

Abstract: A pixel array within an integrated-circuit image sensor includes four sets of photodetection elements disposed in respective pixel-array regions having a shared corner, four readout circuits each coupled to a respective one of the four sets of photodetection elements, a reset node, a reset transistor, and binning transistors. Each of the four readout circuits has a floating diffusion node, a first transfer gate coupled between the floating diffusion node and a constituent photodetection element of the respective one of the four sets of photodetection elements, and an amplifier transistor having a gate terminal coupled to the floating diffusion node. The reset transistor is coupled between the reset node and a reset-voltage supply, and each one of the binning transistors is coupled between the reset node and the floating diffusion node of a respective one of the readout circuits.

Abstract: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

Abstract: An image sensor includes an array of CMOS pixels and a plurality of micro-lens arrays. Each micro-lens array of the plurality of micro-lens arrays includes a plurality of horizontally adjacent micro-lenses. Each micro-lens array of the plurality of micro-lens arrays is situated above a respective CMOS pixel in the array of CMOS pixels.

Abstract: Some embodiments provide methods and apparatus for quantum random number generation based on a single bit or multi bit Quanta Image Sensor (QIS) providing single-photon counting over a time interval for each of an array of pixels of the QIS, wherein random number data is generated based on the number of photons counted over the time interval for each of the pixels.

Abstract: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

Abstract: Row-by-row pixel read-out is executed concurrently within respective clusters of pixels of a pixel array, alternating the between descending and ascending progressions in the intra-cluster row readout sequence to reduce temporal skew between neighboring pixel rows in adjacent clusters.

Abstract: Pixel isolation wells in a semiconductor image sensor are implemented via two or more photoresist patterning phases and two or more corresponding dopant implantation operations. A distinct photomask is applied in each patterning phase with the isolation-well street lines patterned by each mask spaced from one another by an integer multiple (i.e., 2 or greater) of the pixel pitch, and patterns formed by respective masks being staggered by the pixel pitch.

Abstract: First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.