Abstract: A trench MOSFET can include: a semiconductor base having a first doping type; a trench extending from an upper surface of the semiconductor base to internal portion of the semiconductor base; an insulating layer and an electrode conductor located in the trench; a body region having a second doping type and extending from the upper surface of the semiconductor base to the inside thereof and adjacent to the trench; a source region having the first doping type and located in the body region, a first barrier layer located on the electrode conductor and the semiconductor base; and a contact hole in the semiconductor base on both sides of the first barrier layer, where the contact hole is formed by etching process using the first barrier layer as a mask.

Abstract: A method of making a silicon carbide MOSFET device can include: providing a substrate with a first doping type; forming a patterned first barrier layer on a first surface of the substrate; forming a source region with a first doping type in the substrate; forming a base region with a second doping type and a contact region with a second doping type in the substrate, and forming a gate structure. The first barrier layer can include a first portion and a second portion, the first portion can include a semiconductor layer and a removable layer different from the semiconductor layer, and the second portion can only include the removable layer.

Abstract: A trench MOSFET can include: a semiconductor layer having a first doping type; a trench extending from an upper surface of the semiconductor layer to internal portion of the semiconductor layer; insulating layers and electrode conductors located in the trench; a body region having a second doping type in an upper region of the semiconductor layer adjacent to the trench; and a floating region having the first doping type located in a predetermined position of the semiconductor layer adjacent to both sides of the trench, where the floating region is located below the body region and is separated from the body region.

Abstract: A method of manufacturing a trench MOSFET can include: forming a trench extending from an upper surface of a semiconductor base layer to internal portion of the semiconductor base layer; forming a first insulating layer covering sidewall and bottom surfaces of the trench and the upper surface of the semiconductor base layer; forming a shield conductor filling a lower portion of the trench, where the first insulating layer separates the shield conductor from the semiconductor base layer; forming a second insulating layer covering a top surface of the shield conductor, where the first insulating layer separates the second insulating layer from the semiconductor base layer, and the first and second insulating layers conformally form a dielectric layer; and removing the dielectric layer located on the upper surface of the semiconductor base layer and located on the upper sidewall surface of the trench.

Abstract: A clamping apparatus includes a carrier portion formed on a regularly shaped panel, where a track slot is formed in a length direction in the carrier portion; a movable unit, mounted at an end of the carrier portion and capable of being separated from the carrier portion along a length direction of the track slot; and a clamping unit, mounted on a movable unit and configured to prevent, in at least four directions, a clamped object from being separated from the carrier portion. The problem that a size range of clamped objects applicable to the clamping apparatus is limited. The clamping unit is configured to prevent, in the at least four directions, the clamped object from being separated from the carrier portion, effectively preventing the clamped object from being separated from the carrier portion and allowing the clamped object to be protected even in a complex environment.

Abstract: The present application relates to the field of mounting fixture technologies and provides a fixing device for a mobile terminal and an unmanned aerial vehicle remote. The fixing device includes: a base, the base having an accommodation space; a pair of clamping portions, movably disposed at two ends of the base; a pair of expansion links, one end of each expansion link being fixedly connected to the clamping portion on the same side, the other end movably mounted in the accommodation space of the base, and the clamping portion, the expansion link and the base jointly forming a space for accommodating a mobile terminal. The present application is convenient for fixing the mobile terminal and the mobile terminal does not easily drop after being fixed.

Abstract: A clamping apparatus includes a carrier portion formed on a regularly shaped panel, where a track slot is formed in a length direction in the carrier portion; a movable unit, mounted at an end of the carrier portion and capable of being separated from the carrier portion along a length direction of the track slot; and a clamping unit, mounted on a movable unit and configured to prevent, in at least four directions, a clamped object from being separated from the carrier portion. The problem that a size range of clamped objects applicable to the clamping apparatus is limited. The clamping unit is configured to prevent, in the at least four directions, the clamped object from being separated from the carrier portion, effectively preventing the clamped object from being separated from the carrier portion and allowing the clamped object to be protected even in a complex environment.

Abstract: A trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device is disclosed. The trench MOSFET device includes a substrate, a body region, a source region, a dielectric layer, a metal layer, a contact hole, and a trench structure. The substrate includes a substrate layer and an epitaxial layer formed on the substrate layer; the body region is formed in the epitaxial layer; and the source region is formed in the body region of the epitaxial layer. Further, the dielectric layer is formed on the epitaxial layer; the metal layer is formed on the dielectric layer; and the contact hole is formed in the dielectric layer to connect the source region with the metal layer. In addition, the trench structure is formed in the epitaxial layer, and the trench structure includes a first trench that is a pectinate trench including a plurality of tooth trenches and a bar trench interconnecting the plurality of tooth trenches.

Abstract: A trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device is disclosed. The trench MOSFET device includes a substrate, a body region, a source region, a dielectric layer, a metal layer, a contact hole, and a trench structure. The substrate includes a substrate layer and an epitaxial layer formed on the substrate layer; the body region is formed in the epitaxial layer; and the source region is formed in the body region of the epitaxial layer. Further, the dielectric layer is formed on the epitaxial layer; the metal layer is formed on the dielectric layer; and the contact hole is formed in the dielectric layer to connect the source region with the metal layer. In addition, the trench structure is formed in the epitaxial layer, and the trench structure includes a first trench that is a pectinate trench including a plurality of tooth trenches and a bar trench interconnecting the plurality of tooth trenches.