Abstract: The present disclosure provides descriptions of configurations for wire connectors used to splice low voltage electrical conductors or to splice high voltage electrical conductors. The wire connectors may be coupled to form a wire connector assembly. Each wire connector includes a base, a cover, a first cover coupling assembly and a second first cover coupling assembly. The base has an upper wall and a lower wall and can be divided into a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The cover has a main cover member, a first movable cover member movably connected to a first side of the main cover member and a second movable cover member movably connected to a second side of the main cover member. The main cover member includes a plurality of contact chambers, where each contact chamber includes at least one electrical contact positioned within a cavity of the contact chamber.

Abstract: Provided are a data modulation method and device, a data demodulation method and device, a service node, a terminal, and a medium. The data modulation method is applied to the service node, and the data modulation method includes that: a modulation parameter A is determined according to a modulation manner of data; and the data is modulated according to a target constellation point symbol, where the target constellation point symbol is a product of A and X, and X is an initial constellation point symbol corresponding to the modulation manner.

Abstract: Methods, apparatus, and systems for reducing Peak Average Power Ratio (PAPR) in signal transmissions are described. In one example aspect, a wireless communication method includes determining, for an input sequence, an output sequence corresponding to an output of a convolutional modulation between a plurality of values and an intermediate sequence. The intermediate sequence is generated by inserting a set of coefficients between coefficients of the input sequence. Each non-zero coefficient of the set of coefficients is inserted between a first adjacent coefficient and a second adjacent coefficient. Each non-zero coefficient has a power that is between a first power of the first adjacent coefficient and a second power of the second adjacent coefficient and a phase value between a first phase value of the first adjacent coefficient and a second phase value of the second adjacent coefficient. The method also includes generating a waveform using the output sequence.

Abstract: Provided are a resource allocation method, a device, and a storage medium. The resource allocation method includes determining the number of resource blocks according to the length of a reference signal sequence, a roll-off factor of a frequency domain filter, and the number of subcarriers contained in each resource block and allocating frequency domain resources for a transmission band according to the number of resource blocks.

Abstract: A touch panel includes a substrate, a raised structure, a touch sensing electrode layer, and a peripheral circuit layer. The substrate has a visible region and a border region surrounding the visible region. The raised structure is disposed on the substrate and located in the border region, in which the raised structure and the substrate constitute a step area. The touch sensing electrode layer is disposed in the visible region and partially extends to the border region to cross over the raised structure and cover the step area. The peripheral circuit layer is disposed in the border region, and overlaps the touch sensing electrode layer at least on the raised structure and the step area.

Abstract: Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R? having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R? as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R? doping can be achieved. Compared with single rare-earth element R? doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.

Abstract: A method for fingerprint authentication may include obtaining a target fingerprint region including at least one first fingerprint feature set, judging, according to the at least one first fingerprint feature set and fingerprint feature sets included in a plurality of reference fingerprint regions of a fingerprint database, whether a primary reference fingerprint region associated with the target fingerprint region is included in the fingerprint database, where the plurality of fingerprint regions are formed during fingerprint acquisition of a finger performing arc-shaped sliding on a fingerprint identifier and stored in the fingerprint database, and each of the reference fingerprint regions has a corresponding fingerprint feature, and determining, based on a judgment result, whether the target fingerprint region passes the authentication.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R? into an indium-containing MO semiconductor to form an InxMyRnR?mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: A touch panel includes a substrate, a peripheral circuit layer, and a touch sensing electrode layer. The substrate has a visible region and a border region surrounding the visible region. The peripheral circuit layer is disposed on the substrate and located in the border region, and has at least one concave portion, in which the concave portion is located on a surface of the peripheral circuit layer facing away from the substrate. The touch sensing electrode layer is disposed in the visible region and partially extends to the border region to at least cover the concave portion, in which the touch sensing electrode layer has at least one entering portion extending into the concave portion.

Abstract: Methods, apparatus, and systems for reducing Peak Average Power Ratio (PAPR) in signal transmissions are described. In one example aspect, a wireless communication method includes determining, for an input sequence, an output sequence. The output sequence corresponds to an output of a convolutional modulation between a set of coefficients and an intermediate sequence. The intermediate sequence is generated by inserting N zero coefficients between coefficients of the input sequence. The number of non-zero coefficients in the set of coefficients is based on N, N being a positive integer. Values of the non-zero coefficients correspond to values between 0 to ?/2 to reduce a peak to average power ratio of the output sequence. The method also includes generating a waveform using the output sequence.

Abstract: Methods, apparatus, and systems for reducing Peak Average Power Ratio (PAPR) in signal transmissions are described. In one example aspect, a wireless communication method includes determining, for an input sequence, an output sequence corresponding to an output of a convolutional modulation between a plurality of values and an intermediate sequence. The intermediate sequence is generated by inserting a set of coefficients between coefficients of the input sequence. Each non-zero coefficient of the set of coefficients is inserted between a first adjacent coefficient and a second adjacent coefficient. Each non-zero coefficient has a power that is between a first power of the first adjacent coefficient and a second power of the second adjacent coefficient and a phase value between a first phase value of the first adjacent coefficient and a second phase value of the second adjacent coefficient. The method also includes generating a waveform using the output sequence.

Abstract: An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.

Abstract: Disclosed are a sequence generation method, a sequence generation apparatus and a non-transitory computer-readable storage medium. The sequence generation method may include generating a first sequence according to a pre-generated random sequence, and using the first sequence as a reference signal sequence. The first sequence has a plurality of elements which are all in a form of complex numbers and have a same modulus value, a phase difference between two adjacent elements is less than ?/2, and the modulus value is an amplitude value indicating signal strength.

Abstract: The present disclosure provides an effective stress cell for direct measurement of effective stress in saturated soil. The effective stress cell comprises a sensing diaphragm, a porous diaphragm, a connector and a strain sensor. The porous diaphragm allows pore-water to enter the interior space between the sensing diaphragm and the porous diaphragm to provide complete balance of pore-water pressures in the front and back of the sensing diaphragm. Thus, the effective stress cell can directly and accurately measure the effective stress in saturated soil using only one diaphragm at one location without measuring pore-water pressure.

Abstract: A touch LED component and a touch device, and the touch LED component includes a metal cap, a touch button sheathed on an inner wall of the metal cap, and an LED lamp bead coupled to an inner wall of the touch button, a first through hole formed at the top of the metal cap, an induction pin installed at the bottom of the touch button, and an anode pin and a cathode pin installed on both sides of the bottom of the LED lamp bead respectively. The touch device includes a touch panel, a circuit board, and plural touch LED components. The touch LED component with high integration can be packaged by carrier tapes to facilitate automatic plug-ins and simplify production and assembling processes for mass production. The touch device has the features of simple structure, high reliability, good effect and long life.

Abstract: Methods, apparatus, and systems for reducing Peak Average Power Ratio (PAPR) in signal transmissions are described. In one example aspect, a wireless communication method includes determining, for a time-domain sequence x(i), an output sequence s(k). The output sequence s(k) is an inverse Fourier transform of a frequency-domain sequence S(j). S(j) is an output of a frequency-domain shaping operation based on a frequency-domain sequence Y(j) and a set of coefficients. Y(j) corresponds to the time-domain sequence x(i) based on a parameter N. The number of non-zero coefficients in the set of coefficients is based on N, and values of the non-zero coefficients correspond to phase values distributed between 0 to ?/2 to reduce a peak to average power ratio of the output sequence. The method also includes generating a waveform using the output sequence s(k).

Abstract: Embodiments of counter-stress structures and methods for forming the same are disclosed. The present disclosure describes a semiconductor wafer including a substrate having a dielectric layer formed thereon and a device region in the dielectric layer. The device region includes at least one semiconductor device. The semiconductor wafer further includes a sacrificial region adjacent to the device region, wherein the sacrificial region includes at least one counter-stress structure configured to counteract wafer stress formed in the device region.

Abstract: An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.