Abstract: The semiconductor device includes a substrate, an epitaxial layer and a transistor structure. The substrate is a hexagonal crystal structure and has a top surface perpendicular to a c-axis. The top surface of the substrate includes a lattice plane that is parallel to the c-axis, in which the lattice plane is etched by using a developed photoresist, and an included angle between the top surface of the developed photoresist and the substrate is in a range from 30 degree to 60 degree. The epitaxial axis is located on the lattice plane. The transistor structure is located in the epitaxial layer, on the epitaxial layer and on a surface facing away from the epitaxial layer.

Abstract: A page swap method, a storage system, and an electronic device as applied to the field of memory management technologies are provided. The method includes determining, from a least recently used LRU linked list, a to-be-swapped-out first swap-out page of a memory device, determining a second swap-out page from the LRU linked list based on the first swap-out page, and when the first swap-out page is swapped out of the memory device, swapping out the first swap-out page and the second swap-out page to a swap device.

Abstract: The present disclosure provides a method for manufacturing a board-to-board connection structure. The method includes defining a first through hole in a first circuit board, disposing a first connector within the first through hole by a first conductive paste, and connecting the first connector to a second circuit board on which a second connector is installed, thereby realizing a connection of the two circuit boards, and reducing a height of the two circuit boards after the connection. That is, the height of the board-to-board connection structure is reduced. Additionally, since the first connector is received within the first through hole, the first connector is not easy to be damaged and oxidized. The present disclosure further provides a board-to-board connection structure manufactured by the above method.

Abstract: A vinyl-containing copolymer is copolymerized from (a) first compound, (b) second compound, and (c) third compound. (a) First compound is an aromatic compound having a single vinyl group. (b) Second compound is polybutadiene or polybutadiene-styrene having side vinyl groups. (c) Third compound is an acrylate compound. The vinyl-containing copolymer includes 0.003 mol/g to 0.010 mol/g of benzene ring, 0.0005 mol/g to 0.008 mol/g of vinyl group, and 1.2*10?5 mol/g to 2.4*10?4 mol/g of ester group.

Abstract: A tabletop assembly, a lifting frame assembly and a height adjustable table are disclosed. The assembling operation of the height adjustable table is simplified by using a supporting part rotatably connected to a table board support and a first terminal block and a second terminal block which are arranged in pairs. During transportation, the height adjustable table may be disassembled into a tabletop assembly and a lifting frame assembly to be packaged and transported, respectively, thus reducing the size of the package. Meanwhile, the lifting frame assembly may be folded, the second terminal block on the lifting frame assembly in a folded state forms an approximate fan-shaped region with the table board support, so that the second terminal block may be protected during transportation. After receiving the goods, the consumer may assemble the tabletop assembly and the lifting frame assembly through a simple process.

Abstract: A Mg—Li—Al—Zn alloy is disclosed. The Mg—Li—Al—Zn alloy comprises, in weight percent: 5-15% Li, 1.5-9.0% Al, 0.5-1.5% Zn, 0.4-1.3% Y, 0.18-1.01% Nd, 0.09-0.65% Ce, and the balance Mg and incidental impurities. Experimental data have proved that, this novel Mg—Li—Al—Zn alloy has a flashover temperature in a range between 620° C. and 700° C., such that the flashover temperature of the specifically-designed Mg—Li—Al—Zn alloy is greater than that of commercial LAZ521, LAZ721, LAZ771, LAZ921, and LAZ1491 alloys. Therefore, the Mg—Li—Al—Zn alloy of the present invention can be processed to be a structural article through air melt and casting process.

Abstract: A nesting and shear cutting preprocessing method for a defective plate, comprising the following steps: acquiring plate information of a plate, wherein the plate information includes defect information and plate dimension information; making an electronic defect map according to the defect information and the plate dimension information, and partitioning out a region available for nesting and shear cutting; and partitioning the plate to obtain small plates according to the region available for nesting and shear cutting. A nesting and shear cutting layout method for a defective plate, a nesting and shear cutting production optimization method for a defective plate, and a system, a computing device, a storage medium therefor. The preprocessing method and the system can reduce the scrap rate of plate processing.

Abstract: An ultra-fine nanocrystalline diamond precision cutting tool and a manufacturing method therefor. A diamond cutter is made of a thick self-supporting film of ultra-fine nanocrystalline diamond, the thick film having a thickness of 100-3000 microns, where 1 nanometer?diamond grain size?20 nanometers. In the manufacturing method, the growth of ultra-fine nanocrystalline diamond on a silicon substrate is accomplished by means of two steps of direct current hot cathode glow discharge chemical vapor deposition and hot filament chemical vapor deposition, then the silicon substrate is separated from the diamond to obtain a thick self-supporting film of ultra-fine nanocrystalline diamond, the thick self-supporting film of ultra-fine nanocrystalline diamond is laser cut and then welded to a cutter body, and then by means of edging, rough grinding and fine grinding, an ultra-fine nanocrystalline diamond precision cutting tool is obtained.

Abstract: A page swap method, a storage system, and an electronic device as applied to the field of memory management technologies are provided. The method includes determining, from a least recently used LRU linked list, a to-be-swapped-out first swap-out page of a memory device, determining a second swap-out page from the LRU linked list based on the first swap-out page, and when the first swap-out page is swapped out of the memory device, swapping out the first swap-out page and the second swap-out page to a swap device.

Abstract: An oligomer includes a repeating unit and a repeating unit or a combination thereof. The repeating number of the repeating unit (a) and the repeating number of the repeating unit (b1), (b2), or a combination thereof have a ratio of 1:1 to 20:1. Each Q is independently substituted or unsubstituted aliphatic group, cycloaliphatic group, aromatic group, or siloxane group. X can be and Y can be or a combination thereof, and Z can be or a combination thereof.

Abstract: A storage system, a file storage and reading method, and a terminal device are provided. A storage system including a UFS is used as an example. The storage system configures different medium forms of the UFS, for example, configures persistent storage space of the UFS including SLC and TLC medium forms, to implement hybrid medium multi-disk storage. Based on the storage system, a hot file related to an application running rate is preferentially selected and stored in an SLC storage area of the UFS, and files on a mapped multi-disk are mounted on a same directory of a file system, so that files can be migrated between the SLC storage area and a TLC storage area without user perception, to improve performance of the storage system.

Abstract: A liftable table leg includes a bushing, a second fixing piece, a lift assembly, a fixing base and a drive assembly. A first fixing piece is sleeved on a first end of the bushing. The second fixing piece includes a fixing flange and an accommodation groove. The first end is fixed to a bottom end of the accommodation groove through the first fixing piece. A nut of the lift assembly is fixedly disposed at a second end of the bushing. A lead screw of the lift assembly is rotatably disposed in the bushing and threaded into the nut. The second fixing piece is fixedly disposed at the fixing base through the fixing flange. The drive assembly includes a fixing frame. An end of the lead screw is rotatably connected to the fixing frame, and the drive assembly is capable of driving the lead screw to rotate.

Abstract: Provided is a lift desk. The lift desk includes a support base, a first desk board, a second desk board and an adjustment support assembly, where the first desk board is connected to the support base by a lift mechanism; the second desk board is connected to the first desk board and positioned between the support base and the first desk board, and the second desk board is provided with a groove at a side of the second desk board facing towards the first desk board. The adjustment support assembly includes a support block. The support block is slidably disposed in the groove and configured to cooperate with the second desk board to support a supported object.

Abstract: The present disclosure provides a method for manufacturing a board-to-board connection structure. The method includes defining a first through hole in a first circuit board, disposing a first connector within the first through hole by a first conductive paste, and connecting the first connector to a second circuit board on which a second connector is installed, thereby realizing a connection of the two circuit boards, and reducing a height of the two circuit boards after the connection. That is, the height of the board-to-board connection structure is reduced. Additionally, since the first connector is received within the first through hole, the first connector is not easy to be damaged and oxidized. The present disclosure further provides a board-to-board connection structure manufactured by the above method.

Abstract: A self-supporting ultra-fine nanocrystalline diamond thick film, the thickness being 100-3000 microns, wherein 1 nanometer?diamond grain size?20 nanometers. A method for using chemical vapor deposition to grow ultra-fine nanocrystalline diamond on a silicon substrate, and separating the silicon substrate and the diamond to acquire the self-supporting ultra-fine nanocrystalline diamond thick film. The chemical vapor deposition method is simple and effective, and prepares a high-quality ultra-fine nanocrystalline diamond thick film.

Abstract: The present invention is directed to a method for post processing a 3D printed part, to a three-dimensional part fabricated in a method according to the present invention, and further to the use of a liquid in the post processing of a three-dimensional part fabricated in a 3D printing method.

Abstract: A self-supporting ultra-fine nanocrystalline diamond thick film, the thickness being 100-3000 microns, wherein 1 nanometer?diamond grain size?20 nanometers. A method for using chemical vapor deposition to grow ultra-fine nanocrystalline diamond on a silicon substrate, and separating the silicon substrate and the diamond to acquire the self-supporting ultra-fine nanocrystalline diamond thick film. The chemical vapor deposition method is simple and effective, and prepares a high-quality ultra-fine nanocrystalline diamond thick film.

Abstract: The technology relates in part to biological methods for producing terpenes and to engineered cells and microorganisms capable of such production.

Abstract: A modified metal nanoplate and a conductive paste including the same are provided. The modified metal nanoplate includes a metal nanoplate, a first protecting agent, and a second protecting agent. The metal nanoplate has an average width of 0.3-20 ?m and an average thickness of 10-35 nm. The first protecting agent is disposed on a surface of the metal nanoplate and includes an oxygen-containing polymer. The second protecting agent is disposed on the surface of the metal nanoplate and includes a C6-C12 alkylamine.