Abstract: A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.

Abstract: Embodiments of the present invention disclose an alarm information processing method, including: acquiring, by an EMS, a first alarm information set reported by a VNFM, where the first alarm information set is generated after the VNFM performs correlation analysis on at least one piece of NFVI alarm information and at least one piece of VIM alarm information; acquiring, by the EMS, a second alarm information set reported by a VNF, where the second alarm information set includes at least one piece of VNF alarm information; and performing, by the EMS, correlation analysis on the first alarm information set and the second alarm information set, and dispatching a configured work order for alarm information that has a correlation relationship. By using the present invention, a cross-layer association between alarm information can be implemented to reduce a quantity of work orders.

Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a capping layer that is a conductive metal nitride such as MoN contacts an opposite surface of the Hk enhancing layer with respect to the first interface to reduce interdiffusion of oxygen and nitrogen compared with a TiN capping layer and maintain an acceptable resistance x area (RA) product. In other embodiments, the capping layer may comprise an insulating nitride such as AlN that is alloyed with a conductive metal to minimize RA. Furthermore, a metallic buffer layer may be inserted between the capping layer and Hk enhancing layer. As a result, electrical shorts are reduced and the magnetoresistive ratio is increased.

Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.

Abstract: A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.

Abstract: The present invention relates to compounds of formula (I) that are useful as hepatitis C virus (HCV) NS5A inhibitors, the synthesis of such compounds, and the use of such compounds for inhibiting HCV NS5A activity, for treating or preventing HCV infections and for inhibiting HCV viral replication and/or viral production in a cell-based system.

Abstract: A method and device for measuring body temperature and a smart apparatus are disclosed. The method comprises: when a temperature measuring instruction is received, starting a camera and a first infrared thermometer; photographing a user by using the camera to obtain an image, and identifying the image to determine a part to be measured of the user; acquiring a distance between the first infrared thermometer and the user; when the distance is equal to a preset distance threshold, controlling the first infrared thermometer to measure the temperature of the part to be measured of the user; wherein the preset distance threshold is set according to a focal length of a Fresnel lens of the first infrared thermometer; and according to a preset rule and the measured temperature, determining a value or a value range of the user's body temperature.

Abstract: An unmanned aerial vehicle (UAV) communication method and device and a UAV are disclosed.

Abstract: A technique for developing a stack-effect compensation model that is representative of a structure, such as a particular building, and of generating an estimate of the elevation of a wireless terminal inside the structure by using the model. The technique includes estimating information related to one or more neutral pressure planes within the structure, at which the difference between the indoor barometric pressure and the outdoor barometric pressure is essentially zero. The technique leverages pressure and temperature measurements that are provided by one or more wireless terminals that are regularly present in the building. The stack-effect compensation model includes a parameter that represents, for each of a plurality of uncompensated elevations, the height of the particular uncompensated elevation above a neutral pressure plane. The location engine uses this height-information parameter from the compensation model, in order to develop the estimate of the elevation of the wireless terminal.

Abstract: The present invention discloses a spatial positioning device, and a positioning processing method and device. The spatial positioning device comprises a set of cameras arranged horizontally and a set of cameras arranged vertically, wherein each set comprises at least two cameras with the same parameters including an image resolution, a camera lens angle in the horizontal direction and a camera lens angle in the vertical direction; and the at least two cameras in the set of cameras arranged horizontally are aligned in the horizontal direction, and the at least two cameras in the set of cameras arranged vertically are aligned in the vertical direction. In the spatial positioning device provided by the present invention, as the sets of cameras are arranged in the different directions, it is possible to effectively reduce or even eliminate the number of blind spots in the process of image shooting in the single direction.

Abstract: Circuits and methods for programming a MTJ stack of an MRAM cell minimizes a ferromagnetic free layer or pinned layer polarization reversal due to back-hopping. The programming begins by applying a first segment of the segment of the write pulse at a first write voltage level for a first time period to program the MTJ stack. A second segment of the segment of the write pulse at a second write voltage level that is less than the first write voltage level is applied to the magnetic tunnel junction stack for a second time period to correct the polarization of the MTJ when the MTJ stack has reversed polarization during the first time period. The second segment of the segment of the write pulse may be a ramp, or multiple ramps, or have a quiescent period between it and the first segment of the write pulse.

Abstract: A method for charging a service robot and a service robot are disclosed. The method comprises: collecting an audio signal generated by a sound source of a charging pile; determining a direction of the sound source according to the collected audio signal; controlling a robot main body to move toward the direction of the sound source, to shorten a distance between the robot main body and the charging pile; judging whether the infrared receiver array has received an infrared pulse signal emitted by the infrared emitter array of the charging pile; and when the infrared receiver array has received the infrared pulse signal, controlling the robot main body to move toward a direction of the charging pile according to the infrared pulse signal, to engage a charging component of the robot main body with a charging contact element of the charging pile.

Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a capping layer that is a conductive metal nitride such as MoN contacts an opposite surface of the Hk enhancing layer with respect to the first interface to reduce interdiffusion of oxygen and nitrogen compared with a TiN capping layer and maintain an acceptable resistance×area (RA) product. In other embodiments, the capping layer may comprise an insulating nitride such as AlN that is alloyed with a conductive metal to minimize RA. Furthermore, a metallic buffer layer may be inserted between the capping layer and Hk enhancing layer. As a result, electrical shorts are reduced and the magnetoresistive ratio is increased.

Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.

Abstract: A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.

Abstract: A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a boron containing free layer (FL) is subjected to a plasma treatment with inert gas, and a natural oxidation (NOX) process to form B2O3 before overlying layers are deposited. A metal layer such as Mg is deposited on the FL as a first step in forming a Hk enhancing layer that increases FL perpendicular magnetic anisotropy, or as a first step in forming a tunnel barrier layer on the FL. One or more anneal steps are essential in assisting B2O3 segregation from the free layer and thereby increasing the FL magnetic moment. A post-oxidation plasma treatment may also be used to partially remove B2O3 proximate to the FL top surface before the metal layer is deposited. Both plasma treatments use low power (<50 Watts) to remove a maximum of 2 Angstroms FL thickness.

Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichiometric oxidation state to minimize parasitic resistance, and comprises a dopant to fill vacant lattice sites thereby blocking oxygen diffusion through the Mox layer to preserve interfacial PMA and high thermal stability at process temperatures up to 400° C. Various methods of forming the doped Mox layer include deposition of the M layer in a reactive environment of O2 and dopant species in gas form, exposing a metal oxide layer to dopant species in gas form, and ion implanting the dopant. In another embodiment, where the dopant is N, a metal nitride layer is formed on a metal oxide layer, and then an anneal step drives nitrogen into vacant sites in the metal oxide lattice.

Abstract: The application discloses a multichannel echo cancellation circuit and method and smart device. The multichannel echo cancellation circuit comprises signal extraction circuits, one ends of which are connected to the audio channels of the corresponding loudspeakers, to extract part of the audio signals from the audio channels of the corresponding loudspeakers as echo cancellation reference signals; the other ends of the signal extraction circuits are connected to the isolating circuits; the isolating circuits are interconnected to form one noise channel by which the echo cancellation reference signals extracted by each of the signal extraction circuits are formed into one channel of noise signal and then outputted to the processor; and the processor subtracts the noise signal from the sound signal collected by the microphone according to the noise signal inputted and a sound signal collected by a microphone, to obtain a signal that has been denoised.

Abstract: New stretchable electrically conductive composite materials comprising at least one polymer and a plurality of nanoparticles are provided, which exhibit high conductivity even at high strain levels. The composite may comprise polyurethane as the polymer and spherical gold nanoparticles. Such materials have conductivity levels as high as 11,000 Scm?1 at 0% strain and 2,400 Scm?1 at 110% strain. Furthermore, certain embodiments of the composite have a maximum tensile strain of 480% while still exhibiting conductivity of 35 Scm?1. The inventive materials are highly flexible, highly conductive and suitable for a variety of applications, especially for advanced medical devices, implants, and flexible electronics. The disclosure also provides methods of making such stretchable electrically conductive nanocomposites, including formation by layer-by-layer and vacuum assisted flocculation.