Abstract: A special-shaped plane reflecting mirror including a first reflecting mirror, a second reflecting mirror, a third reflecting mirror, a fourth reflecting mirror and a fifth reflecting mirror; wherein the second reflecting mirror and the fourth reflecting mirror are constructed the same and symmetrically arranged on both sides of the first reflecting mirror, the third and fifth reflecting mirrors have the same structure and are arranged symmetrically on both sides of the first reflecting mirror, the first reflecting mirror is placed at an angle of 45° with the horizontal plane, and the second reflecting mirror. The first mirror is placed at an angle of 45° with the horizontal plane, the angle between the reflection surface of the second mirror and the reflection surface of the first mirror is 165°, and the angle between the reflection surface of the third mirror and the reflection surface of the first mirror is 163°.

Abstract: A device for measuring the Modulation Transfer Function (MTF) of an optical system, the device including a six-axis manipulator and an internal focusing collimator. The internal focusing collimator is fixedly installed on a flange of the manipulator. The manipulator is used to adjust the exit pupil of the internal focusing collimator and the posture of the internal focusing collimator. The tool control points of the manipulator are set at the exit pupil of the internal focusing collimator. The exit pupil of the focus collimator is located at the entrance pupil of the optical system to be measured so that the exit pupil of the inner focus collimator and the entrance pupil of the optical system to be measured are arranged in parallel. The device uses a manipulator to surround the tool point, only changing the posture and does not change the characteristics of the position transformation.

Abstract: Embodiments of the disclosed techniques include methods, apparatus, and instructions for split-horizon filtering in an Ethernet virtual private network (EVPN), where an EVPN instance includes a plurality of provider edges (PEs) that forward traffic for a plurality of customer edges (CEs). In one embodiment, a method includes advertising a set of single Broadcast, Unknown unicast, or Multicast (BUM) identifiers, each in an Inclusive Multicast Ethernet tag (IMET) route from a PE of the EVPN instance to one other PE within the plurality of PEs, where each PE that shares an Ethernet segment with the PE is advertised with one unique BUM identifier; and forwarding by the PE, BUM packets from another PE of the EVPN instance to one or more CEs coupled to the PE based on a single BUM identifier encapsulated within the BUM packets.

Abstract: In a backlight module, a liquid crystal display screen, and a using method thereof provided, the liquid crystal display screen includes a liquid crystal display panel, a backlight module switchable between a transparent state and a backlight state, and an optical component. Without disrupting full screen display and increasing a possibility of cellphone damages, the backlight module may solve a problem that the liquid crystal display screen is opaque to light, such that the screen is normally displayed, and the optical component is operated on the same liquid crystal display screen.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AIN).

Abstract: A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.

Abstract: A special-shaped plane reflecting mirror including a first reflecting mirror, a second reflecting mirror, a third reflecting mirror, a fourth reflecting mirror and a fifth reflecting mirror; wherein the second reflecting mirror and the fourth reflecting mirror are constructed the same and symmetrically arranged on both sides of the first reflecting mirror, the third and fifth reflecting mirrors have the same structure and are arranged symmetrically on both sides of the first reflecting mirror, the first reflecting mirror is placed at an angle of 45° with the horizontal plane, and the second reflecting mirror. The first mirror is placed at an angle of 45° with the horizontal plane, the angle between the reflection surface of the second mirror and the reflection surface of the first mirror is 165°, and the angle between the reflection surface of the third mirror and the reflection surface of the first mirror is 163°.

Abstract: A controlling device is disclosed for Ethernet virtual private network (EVPN). According to an embodiment, the controlling device determines a first provider (P) device which is to handle broadcast, unknown unicast or multicast (BUM) traffic from a first provider edge (PE) device in an EVPN instance, on behalf of remaining PE devices in the same EVPN instance. The controlling device performs route reflection from the remaining PE devices to the first PE device such that the first PE device knows that BUM traffic needs to be forwarded to the first P device. The controlling device configures the first P device such that upon receipt of BUM traffic from the first PE device, the first P device can forward the BUM traffic to the remaining PE devices.

Abstract: Embodiments of the present disclosure provide methods and apparatuses for network communication. A method comprises determining a link between an edge device of a second network and the first edge device of the first network is failed or the edge device of the second network is failed or an identifier of an Ethernet segment corresponding to the edge device of the second network has been changed; and advertising a first message including withdrawal of the Ethernet segment corresponding to the edge device of the second network and a corresponding substitution Ethernet segment of the second network, wherein the corresponding substitution Ethernet segment of the second network can be used by one or more other edge devices of the first network receiving the first message to switch routes associated with the Ethernet segment corresponding to the edge device of the second network to the corresponding substitution Ethernet segment of the second network.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Abstract: A method for detecting lens cleanliness of a lens disposed in a flat-field optical path, the flat-field optical path including a light source, the lens, a camera, the light source is a narrow-band multispectral uniform surface light source, the camera's light-sensitive surface is disposed perpendicular to an optical axis of the lens and in the light position of the lens, the method including collecting the bright-field image data and dark-field image data in a plurality of spectra through the lens; for each pixel, performing a spectral differential flat-field correction operation to yield a plurality of spectral differentials; and displaying the spectral differentials in the form of a plurality of images to show a uniformity of each of the plurality of images, wherein a non-uniform area on each of the plurality of images is determined to have been caused by an impurity of the lens.

Abstract: A method for detecting lens cleanliness of a lens disposed in a flat-field optical path, the flat-field optical path including a light source, the lens, a camera, the light source is a narrow-band multispectral uniform surface light source, the camera's light-sensitive surface is disposed perpendicular to an optical axis of the lens and in the light position of the lens, the method including collecting the bright-field image data and dark-field image data in a plurality of spectra through the lens; for each pixel, performing a spectral differential flat-field correction operation to yield a plurality of spectral differentials; and displaying the spectral differentials in the form of a plurality of images to show a uniformity of each of the plurality of images, wherein a non-uniform area on each of the plurality of images is determined to have been caused by an impurity of the lens.

Abstract: A method for detecting lens cleanliness of a lens in a flat-field optical path, the flat-field optical path includes a light source, the lens, a camera, the light source is a narrow-band multispectral uniform surface light source, the camera's light-sensitive surface is disposed perpendicular to an optical axis of the lens and in the light position of the lens and a pupil interposed between the lens and the light source, the method including collecting the bright-field image data and dark-field image data for a plurality of pupil aperture sizes through the lens; for each pixel, performing a pupil differential flat field correction to yield a plurality of PiPj pupil differentials; and displaying the pupil differentials in the form of a plurality of images to show uniformity of each the image, wherein a non-uniform area on each the image is determined to have been caused by an impurity of the lens.

Abstract: The present disclosure provides a method in a network device. The method includes: determining a node delay associated with the network device and/or a link delay associated with a link between the network device and a neighboring network device; and transmitting to the neighboring network device a Link Layer Discovery Protocol Data Unit, LLDPDU, containing the node delay and/or the link delay.

Abstract: Provided are a provider edge (PE) device and a method for Ethernet virtual private network (EVPN). A first PE device performs label assignment procedure with a second PE device such that the first and second PE devices share an Ethernet segment identifier (ESI)-excluded label and know a correspondence between the ESI-excluded label and a label combination of an ESI label and a VPN label. The first PE device encapsulates a packet of broadcast, unknown unicast or multicast (BUM) traffic, with the ESI-excluded label instead of the label combination. The first PE device sends the encapsulated packet to the second PE device.

Abstract: A method for detecting lens cleanliness of a lens in a flat-field optical path, the flat-field optical path includes a light source, the lens, a camera, the light source is a narrow-band multispectral uniform surface light source, the camera's light-sensitive surface is disposed perpendicular to an optical axis of the lens and in the light position of the lens and a pupil interposed between the lens and the light source, the method including collecting the bright-field image data and dark-field image data for a plurality of pupil aperture sizes through the lens; for each pixel, performing a pupil differential flat field correction to yield a plurality of PiPj pupil differentials; and displaying the pupil differentials in the form of a plurality of images to show uniformity of each image, wherein a non-uniform area on each image is determined to have been caused by an impurity of the lens.

Abstract: A method for detecting lens cleanliness of a lens in a flat-field optical path, the flat-field optical path includes a light source, the lens, a camera, the light source is a narrow-band multispectral uniform surface light source, the camera's light-sensitive surface is disposed perpendicular to an optical axis of the lens and in the light position of the lens, the method including disposing the camera such that the camera's light-sensitive surface is located a distance from the focal plane of the lens and measuring the bright-field image data and the dark-field image data; for each pixel, performing an out-of-focus differential flat field correction to yield a plurality of DiDj out-of-focus differentials; repeating the disposing and performing steps by altering the distance at least two more times; and displaying the out-of-focus differentials in the form of a plurality of images to show uniformity of each of the plurality of images.

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.