Abstract: Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Abstract: The present disclosure is generally directed to methods for anchoring nucleic acid in a matrix and subsequently imaging nucleic acid targets (e.g. RNA transcript molecules) within tissue samples, for example, formalin-fixed paraffin-embedded (FFPE) tissue sections wherein the nucleic acid may be fragmented.

Abstract: A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.

Abstract: A method by a network device functioning as a provider edge (PE) in an ethernet virtual private network (EVPN) to prevent transient loops between multi-home peer PEs. The method includes advertising a first EVPN label to one or more PEs that are multi-home peer PEs of the PE, advertising a second EVPN label to one or more PEs that are not multi-home peer PEs of the PE, receiving first traffic for a CE that is encapsulated with the first EVPN label as opposed to the second EVPN label, and discarding the first traffic in response to determining that a link between the PE and the CE is not operational and the first traffic for the CE is encapsulated with the first EVPN label.

Abstract: A method for aligning the projection of a first light source with an in-coupler of a waveguide, the method including supplying a secondary light source through an optical path of the waveguide to exit at the in-coupler of the waveguide as an exit light; determining the concentricity of the exit light with respect to the first light source; and improving the concentricity of the exit light with respect to the first light source by adjusting the positioning of the first light source such that the exit light becomes concentric with the projection of the first light source.

Abstract: A system for extending the effective aperture of an optical output in a direction parallel to the optical axis of the optical output, the system including a beam splitter configured for receiving an output beam of the optical output along the optical axis of the optical output, the beam splitter configured for splitting the output beam into two light beams; a central mirror for receiving and directing a first of the two light beams from the beam splitter; and a pair of motorized mirrors each motorized mirror including a mobility mechanism and a mirror functionally connected to the mobility mechanism, each of the motorized mirrors is configured to be movable in a direction orthogonal to the optical axis, wherein the optical output is extended to the two light beams separated by a pupil distance adjustable by controlling at least a mobility mechanism of one of the pair of motorized mirrors.

Abstract: A device for providing an output beam in a direction, the device including a plate including an exit pupil; a plurality of rows of optical elements disposed substantially in a first plane, each row of optical elements in the first plane including: at least one beam splitter; and a plurality of rows of optical elements disposed substantially in a second plane, the optical elements in the second plane include mirrors, wherein the second plane is disposed between the exit pupil and the first plane, wherein the at least one beam splitter at the first plane is configured to transmit an incident beam to one of a subsequent optical element at the first plane and a subsequent optical element at the second plane before being reflected to exit through the exit pupil.

Abstract: A prism module for enabling a large field of view high resolution sampling of incoming rays, the prism module including a plurality of elongated prisms disposed about a central axis, each of the prisms including a fore surface; an aft surface; and a reflecting surface connected on a first edge to the fore surface and connected on a second edge to the aft surface, wherein the fore surface is configured to receive the incoming light rays orthogonally disposed with respect to the fore surface, the reflecting surface configured to reflect the incoming light rays to cause outgoing light rays to exit at a right angle through the aft surface to form an image with a maximum distortion not recognizable by a human eye.

Abstract: A system for calibrating an equipment, the system including a beam splitter; a first reticle configured to be removably attached to the equipment; and an image capture device including an image plane, wherein an image of the first reticle is configured to be received by way of the beam splitter at the image plane along an optical axis of the beam splitter, wherein the orientation as indicated by the first reticle is compared to an orientation of the image plane and if the orientation as indicated by the first reticle differs from the orientation of the image plane, the equipment is rotated about the optical axis of the beam splitter such that the orientation as indicated by the first reticle matches the orientation of the image plane.

Abstract: A chromatic confocal sensor configured for calibrating an orientation of an equipment about the optical axis of the chromatic confocal sensor, wherein the equipment is disposed at a first orientation about the optical axis of the chromatic confocal sensor, the chromatic confocal sensor including a light source, a collimator, a lens and a reticle, wherein the light source, the collimator and the lens are coaxially disposed along the optical axis, the reticle is configured to be interposable between the collimator and the lens along the optical axis, an image is configured to be cast by the light source through the collimator, the reticle and the lens on the equipment, the image is disposed at a second orientation about the optical axis and the equipment is calibratable by aligning the equipment with the image such that the first orientation approaches the second orientation.

Abstract: A special-shaped plane reflecting mirror including a first reflecting mirror, a second reflecting mirror, a third reflecting mirror, a fourth reflecting mirror and a fifth reflecting mirror; wherein the second reflecting mirror and the fourth reflecting mirror are constructed the same and symmetrically arranged on both sides of the first reflecting mirror, the third and fifth reflecting mirrors have the same structure and are arranged symmetrically on both sides of the first reflecting mirror, the first reflecting mirror is placed at an angle of 45° with the horizontal plane, and the second reflecting mirror. The first mirror is placed at an angle of 45° with the horizontal plane, the angle between the reflection surface of the second mirror and the reflection surface of the first mirror is 165°, and the angle between the reflection surface of the third mirror and the reflection surface of the first mirror is 163°.

Abstract: A device for measuring the Modulation Transfer Function (MTF) of an optical system, the device including a six-axis manipulator and an internal focusing collimator. The internal focusing collimator is fixedly installed on a flange of the manipulator. The manipulator is used to adjust the exit pupil of the internal focusing collimator and the posture of the internal focusing collimator. The tool control points of the manipulator are set at the exit pupil of the internal focusing collimator. The exit pupil of the focus collimator is located at the entrance pupil of the optical system to be measured so that the exit pupil of the inner focus collimator and the entrance pupil of the optical system to be measured are arranged in parallel. The device uses a manipulator to surround the tool point, only changing the posture and does not change the characteristics of the position transformation.

Abstract: Embodiments of the disclosed techniques include methods, apparatus, and instructions for split-horizon filtering in an Ethernet virtual private network (EVPN), where an EVPN instance includes a plurality of provider edges (PEs) that forward traffic for a plurality of customer edges (CEs). In one embodiment, a method includes advertising a set of single Broadcast, Unknown unicast, or Multicast (BUM) identifiers, each in an Inclusive Multicast Ethernet tag (IMET) route from a PE of the EVPN instance to one other PE within the plurality of PEs, where each PE that shares an Ethernet segment with the PE is advertised with one unique BUM identifier; and forwarding by the PE, BUM packets from another PE of the EVPN instance to one or more CEs coupled to the PE based on a single BUM identifier encapsulated within the BUM packets.

Abstract: In a backlight module, a liquid crystal display screen, and a using method thereof provided, the liquid crystal display screen includes a liquid crystal display panel, a backlight module switchable between a transparent state and a backlight state, and an optical component. Without disrupting full screen display and increasing a possibility of cellphone damages, the backlight module may solve a problem that the liquid crystal display screen is opaque to light, such that the screen is normally displayed, and the optical component is operated on the same liquid crystal display screen.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AIN).

Abstract: A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.

Abstract: A special-shaped plane reflecting mirror including a first reflecting mirror, a second reflecting mirror, a third reflecting mirror, a fourth reflecting mirror and a fifth reflecting mirror; wherein the second reflecting mirror and the fourth reflecting mirror are constructed the same and symmetrically arranged on both sides of the first reflecting mirror, the third and fifth reflecting mirrors have the same structure and are arranged symmetrically on both sides of the first reflecting mirror, the first reflecting mirror is placed at an angle of 45° with the horizontal plane, and the second reflecting mirror. The first mirror is placed at an angle of 45° with the horizontal plane, the angle between the reflection surface of the second mirror and the reflection surface of the first mirror is 165°, and the angle between the reflection surface of the third mirror and the reflection surface of the first mirror is 163°.

Abstract: A controlling device is disclosed for Ethernet virtual private network (EVPN). According to an embodiment, the controlling device determines a first provider (P) device which is to handle broadcast, unknown unicast or multicast (BUM) traffic from a first provider edge (PE) device in an EVPN instance, on behalf of remaining PE devices in the same EVPN instance. The controlling device performs route reflection from the remaining PE devices to the first PE device such that the first PE device knows that BUM traffic needs to be forwarded to the first P device. The controlling device configures the first P device such that upon receipt of BUM traffic from the first PE device, the first P device can forward the BUM traffic to the remaining PE devices.

Abstract: Embodiments of the present disclosure provide methods and apparatuses for network communication. A method comprises determining a link between an edge device of a second network and the first edge device of the first network is failed or the edge device of the second network is failed or an identifier of an Ethernet segment corresponding to the edge device of the second network has been changed; and advertising a first message including withdrawal of the Ethernet segment corresponding to the edge device of the second network and a corresponding substitution Ethernet segment of the second network, wherein the corresponding substitution Ethernet segment of the second network can be used by one or more other edge devices of the first network receiving the first message to switch routes associated with the Ethernet segment corresponding to the edge device of the second network to the corresponding substitution Ethernet segment of the second network.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).