Abstract: Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on exposed top surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in the top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes the oxidized portion of the seed layer. A second etch process removes portions of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: Methods of generating and expanding human hemangio-colony forming cells in vitro and methods of expanding and using such cells are disclosed. The methods permit the production of large numbers of hemangio-colony forming cells as well as derivative cells, such as hematopoietic and endothelial cells. The cells obtained by the methods disclosed may be used for a variety of research, clinical, and therapeutic applications.

Abstract: The disclosure discloses a solid fluidization tubular separator for marine natural gas hydrate, which includes a first separator and a second separator, wherein the first separator includes the first separation sleeve, the power liquid pipe, the swirl baffle, the recovery mechanism and the sand discharge mechanism. After the hydrate is sucked into the first separation sleeve to generate a circumferential velocity, so that the mud and sand with high density are separated to the pipe wall of the first separation sleeve, and the mud and sand separated to the pipe wall are settled down from the gap between the swirl baffle and the pipe wall along the pipe wall. The hydrate swirl flows into the recovery mechanism, and then leaves the first separation sleeve and enters the second separator, so as to realize the separation of mud and sand and natural gas hydrate.

Abstract: A motor is provided and driven by two phase. The first and second control signals have a phase difference of 90 degrees and are configured to control the first and second driving units, respectively, and the first and second control signals drive the first and second coil sets, respectively. Each of the first and second poles of the permanent magnet occupies a mechanical angle of 360/2n degrees of the permanent magnet, respectively, and n is 1 or 3. The four sets of the coils of the stator are equally located on the stator, each set of the coil occupies a mechanical angle of 360/2m degrees of the stator, any two sets of the coils adjacent to each other are separated by a mechanical angle of 90?(360/2m) degrees, and m is 3 or 2, wherein m corresponds to 2 when n is 1, m corresponds to 3 when n is 3.

Abstract: Methods for selectively depositing on self-assembled monolayer (SAM) are disclosed. Some embodiments of the disclosure utilize a precursor of a Formula (I), Formula (II), Formula (III), and Formula (IV): RnSi(NR?R?)(4-n) (III), RnSiX(4-n) (IV), wherein R1 and R2 are independently selected from substituted or unsubstituted C1-C20 alkyl, or R1 and R2 form a substituted or unsubstituted C1-C20 cycloalkyl ring, and wherein R3, R4, R5, R6, Rn are independently selected from hydrogen, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C1-C20 alkoxy, and substituted or unsubstituted C1-C20 vinyl, X is a halide selected from Cl, Br, and I, and n is an integer from 1 to 3, to form a self-assembled monolayer (SAM) on a damaged silicon nitride layer to prevent critical dimension blow out of a feature in a silicon nitride layer substrate.

Abstract: The present application discloses a cleaning device and a dust box. The cleaning device may comprise a cleaning apparatus and a switching assembly. The cleaning apparatus may be connected to a base station to form a suction channel with the base station. The base station may suction waste inside the cleaning apparatus via the suction channel. The switching assembly may be provided in the cleaning apparatus to intermittently block the suction channel to change the pressure of the suction channel, so that the waste inside the cleaning device can be suctioned out of the cleaning device.

Abstract: Methods of generating and expanding human hemangio-colony forming cells in vitro and methods of expanding and using such cells are disclosed. The methods permit the production of large numbers of hemangio-colony forming cells as well as derivative cells, such as hematopoietic and endothelial cells. The cells obtained by the methods disclosed may be used for a variety of research, clinical, and therapeutic applications.

Abstract: Methods for production of platelets from pluripotent stem cells, such as human embryonic stem cells (hESCs) and induced pluripotent stem cells (iPSCs) are provided. These methods may be performed without forming embryoid bodies or clusters of pluripotent stem cells, and may be performed without the use of stromal inducer cells. Additionally, the yield and/or purity can be greater than has been reported for prior methods of producing platelets from pluripotent stem cells. Also provided are compositions and pharmaceutical preparations comprising platelets, preferably produced from pluripotent stem cells.

Abstract: Methods are provided for the production of photoreceptor cells and photoreceptor progenitor cells from pluripotent stem cells. Additionally provided are compositions of photoreceptor cells and photoreceptor cells, as well as methods for the therapeutic use thereof. Exemplary methods may produce substantially pure cultures of photoreceptor cells and/or photoreceptor cells.

Abstract: The disclosure discloses a solid fluidization tubular separator for marine natural gas hydrate, which includes a first separator and a second separator, wherein the first separator includes the first separation sleeve, the power liquid pipe, the swirl baffle, the recovery mechanism and the sand discharge mechanism. After the hydrate is sucked into the first separation sleeve to generate a circumferential velocity, so that the mud and sand with high density are separated to the pipe wall of the first separation sleeve, and the mud and sand separated to the pipe wall are settled down from the gap between the swirl baffle and the pipe wall along the pipe wall. The hydrate swirl flows into the recovery mechanism, and then leaves the first separation sleeve and enters the second separator, so as to realize the separation of mud and sand and natural gas hydrate.

Abstract: The present application discloses dust boxes, dust box assemblies and cleaning devices, wherein the dust box assembly includes a dust box and at least two fans. The dust box is formed with a holding cavity, a dust suction port and at least two air outlets, the dust suction port is connected to the holding cavity, the at least two air outlets are connected to the holding cavity. At least two fans are provided corresponding to at least two air outlets for creating an airflow that passes through the dust suction port, the holding chamber and the air outlet in sequence.

Abstract: The present application discloses a cleaning device and its dust box. The cleaning device may comprise a body, a dust box, and at least two fans. The dust box may be provided for connection to the body, the at least two fans are provided in the body for forming an airflow into and out of the dust box through the apparatus body. The dust box may be provided such that the airflow formed by each of the at least two fans can flow out of the dust box in different directions.

Abstract: Methods are provided for the production of photoreceptor cells and photoreceptor progenitor cells from pluripotent stem cells. Additionally provided are compositions of photoreceptor cells and photoreceptor cells, as well as methods for the therapeutic use thereof. Exemplary methods may produce substantially pure cultures of photoreceptor cells and/or photoreceptor cells.