Abstract: Disclosed is a fast lock phase-locked loop circuit for avoiding cycle slip, which belongs to the technical field of integrated circuits. The fast lock phase-locked loop circuit includes a phase frequency detector, a charge pump, an intermediate stage circuit, a loop filter, a voltage-controlled oscillator and a frequency divider. The phase frequency detector, the charge pump, the intermediate stage circuit, the loop filter and the voltage-controlled oscillator are connected in sequence; an output OUT end of the voltage-controlled oscillator is connected with an input IN end of frequency divider, and an output OUT end of the frequency divider is connected with an input IN end of the phase frequency detector to form a feedback path. The output clock frequency of the VCO and the expected frequency, i.e., the reference clock frequency and the feedback clock frequency, are prevented from being too close when the loop is started. (FIG.

Abstract: The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.

Abstract: A detection substrate and a flat-panel detector, and relates to the technical field of photoelectric detection. The detection substrate can improve radiation resistance and prolong a service life without increasing the thickness of a scintillator layer. The detection substrate includes a plurality of detection pixel units arranged in an array. Each of the detection pixel units includes: a transistor, a photoelectric conversion section, and a scintillator layer, with the photoelectric conversion section disposed between the transistor and the scintillator layer, the photoelectric conversion section includes a radiation sensitive layer and a photosensitive unit, which are laminated in arrangement; the radiation sensitive layer is configured to absorb rays and convert the rays into carriers; and the photosensitive unit is configured to at least absorb visible light and convert the visible light into carriers. The present disclosure is applicable to the production of the detection substrates.

Abstract: The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.

Abstract: A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.

Abstract: A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

Abstract: The present disclosure provides a flat panel detector and a medical image detection device. The flat panel detector includes a base substrate, wherein the base substrate is divided into a plurality of detection units, each detection unit includes a first absorbing layer and a second absorbing layer, both of which are arranged on the base substrate in a laminating manner, the second absorbing layer is located on one side, away from the base substrate, of the first absorbing layer, and an energy level of rays absorbed by the second absorbing layer is smaller than that of rays absorbed by the first absorbing layer; a voltage supply electrode structure; and an output circuit, electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorbing layer and a second detection signal of the second absorbing layer.

Abstract: An X-ray flat panel detector, a method for manufacturing the X-ray flat panel detector, a detection device and an imaging system are provided. The X-ray flat panel detector includes: a substrate; a back plate layer arranged on the substrate and including a plurality of thin film transistors, each thin film transistor including a source/drain electrode layer; a wiring layer arranged at a side of the back plate layer distal to the substrate and including a plurality of connection lines; and a photosensitive element layer arranged at a side of the wiring layer distal to the substrate and including first electrodes. Each first electrode is electrically connected to the source/drain electrode layer of a corresponding thin film transistor through a corresponding connection line, and an orthogonal projection of the first electrode onto the substrate does not overlap an orthogonal projection of the corresponding thin film transistor onto the substrate.

Abstract: The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.

Abstract: A detection substrate and a ray detector are disclosed. The detection substrate includes a base substrate; a plurality of detection pixel circuits, located on the base substrate; a first passivation layer, located on the side, facing away from the base substrate, of the detection pixel circuits; a planarization layer, located on the side, facing away from the base substrate, of the first passivation layer, where the surface of the side, facing away from the first passivation layer, of the planarization layer is a plane; and a plurality of photosensitive devices; where the photosensitive devices are electrically connected to the detection pixel circuits in a one-to-one correspondence through vias penetrating through the first passivation layer and the planarization layer, and each photosensitive device includes a first portion and a second portion.

Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.

Abstract: Provided are a display panel (10) and the driving method thereof. The display panel (10) may include a first substrate (110) and a second substrate (120) opposite the first substrate (110). The first substrate (110) may include a pixel unit (100), and the pixel unit (100) may include a light emitting element (101) and a first transistor (112) for driving the light emitting element (101) to emit light. The second substrate (120) may include a second transistor (122). The second transistor (122) may be configured to have a second drift value of a second threshold voltage which has a specific relationship with a first drift value of a first threshold voltage of the first transistor (112) under same ambient condition.

Abstract: Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.

Abstract: A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

Abstract: Provided are an array substrate, a display panel, a display apparatus and a preparation method therefor. The array substrate comprises: a base substrate; and multiple pixel units arranged on one side of the base substrate, each of the pixel units comprising: a thin-film transistor and an electroluminescent structure, and a shading structure located between the thin-film transistor and the base substrate, wherein the thin-film transistor comprises: an active layer located on one side, away from the base substrate, of the shading structure; the electroluminescent structure comprises: first electrodes for driving the pixel units; and one of the shading structure and the active layer is a same-layer structure fabricated by the same mask plate as the first electrodes so as to reduce the number of mask procedures required in preparation of an array substrate.

Abstract: Disclosed is a zero-delay phase-locked loop frequency synthesizer based on multi-stage synchronization, which belongs to the technical field of integrated circuits. The zero-delay phase-locked loop frequency synthesizer comprises: a phase frequency detector, a charge pump, a loop pass filter, a voltage control oscillator and a multi-stage synchronization divider, wherein the phase frequency detector, the charge pump, the loop pass filter and the voltage control oscillator are connected in sequence; an output OUT of the voltage control oscillator is connected to an input IN of the multi-stage synchronization divider; and an output OUT of the multi-stage synchronization divider is connected to an input IN of the phase frequency detector, so as to form a feedback path.

Abstract: A display panel includes a thin film transistor layer (4), a grating layer (3), a transparent anode layer (2), an emission layer (1), and a colored layer (6) opposite the emission layer (1). The colored layer (6) may include a plurality of color filters. The grating layer (3) may be between the thin film transistor layer (4) and the transparent anode layer (2). The grating layer (3) may include a plurality of blazed gratings corresponding to the plurality of color filters, respectively.

Abstract: Provided are a display panel (10) and the driving method thereof. The display panel (10) may include a first substrate (110) and a second substrate (120) opposite the first substrate (110). The first substrate (110) may include a pixel unit (100), and the pixel unit (100) may include a light emitting element (101) and a first transistor (112) for driving the light emitting element (101) to emit light. The second substrate (120) may include a second transistor (122). The second transistor (122) may be configured to have a second drift value of a second threshold voltage which has a specific relationship with a first drift value of a first threshold voltage of the first transistor (112) under same ambient condition.

Abstract: A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further i a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.

Abstract: The present application provides a method for manufacturing a microelectrode film. The method includes: forming at least one recess on the carrier substrate by isotropic etching; forming a microelectrode seed pattern in the recess; growing a microelectrode in the recess by using the microelectrode seed pattern; making a first substrate to be in contact with a side of the carrier substrate having the recess thereon; separating the microelectrode from the carrier substrate to transfer the microelectrode onto the first substrate.