Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.

Abstract: Systems and techniques associated light detection and ranging (LIDAR) applications are described. In one representative aspect, techniques can be used to implement a packaged semi-conductive apparatus is disclosed. The apparatus includes a substrate; a diode die carried by the substrate and positioned to emit an electromagnetic energy beam; and a shell coupled to the substrate to enclose the diode die. The shell includes an opening or a transparent area to allow the electromagnetic energy beam emitted from the diode die to pass through the shell.

Abstract: The present disclosure provides a laser diode module. The laser diode module includes a substrate including a first surface and a second surface opposite to each other; a cover disposed on the first surface of the substrate, and an accommodation space being formed between the substrate and the cover; and a laser diode die disposed in the accommodation space.

Abstract: Systems and techniques associated light detection and ranging (LIDAR) applications are described. In one representative aspect, techniques can be used to implement a packaged semi-conductive apparatus is disclosed. The apparatus includes a substrate; a diode die carried by the substrate and positioned to emit an electromagnetic energy beam; and a shell coupled to the substrate to enclose the diode die. The shell includes an opening or a transparent area to allow the electromagnetic energy beam emitted from the diode die to pass through the shell.

Abstract: The present invention discloses a terahertz metamaterial. The terahertz metamaterial includes a substrate and an electromagnetic loss resonant ring structure disposed on the substrate, where an electromagnetic modulation function is realized on a terahertz band by adjusting different structural sizes and square resistance of the electromagnetic loss resonant ring structure. In the present invention, the electromagnetic loss resonant ring structure is disposed on the substrate, and the electromagnetic modulation function is realized on the terahertz band by adjusting the different structural sizes and square resistance of the electromagnetic loss resonant ring structure, thereby simplifying processing steps of a terahertz device, reducing a processing cost, and enabling a terahertz technology to be widely used in the field of electromagnetic communication.

Abstract: Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.

Abstract: The disclosure discloses a display substrate, a method for fabricating the same, and a display device. The display substrate includes: a light-shielding metal layer pattern on a base substrate; a photo-sensitive sensing element layer on the light-shielding metal layer pattern, wherein an orthographic projection of the photo-sensitive sensing element layer onto the base substrate lies in an overlapping area of orthographic projections of the light-shielding metal layer pattern and the sub-pixel areas onto the base substrate; a buffer layer on the photo-sensitive sensing element layer; and a compensation control TFT and a signal line on the buffer layer, wherein a source electrode of the compensation control TFT is electrically connected with the light-shielding metal layer pattern, and the signal line is electrically connected with the photo-sensitive sensing element layer.

Abstract: A power adjustment method includes controlling a power detection circuit of a laser measurement device to detect a power of laser emitted from a laser emission circuit of the laser measurement device, obtaining a threshold power corresponding to the laser measurement device, and adjusting the power of the laser according to the threshold power.

Abstract: The present disclosure provides a cold firework spurting apparatus, comprising: a feeding device; a conveying device; a heating mechanism; and a spurting device configured to ignite and spurt the metal powder heated by the heating mechanism, wherein an output end of the feeding device is open to the conveying device and an output end of the conveying device is open to the spurting device. Accordingly, the metal powder inside the conveying device is continuously heated by the heating mechanism attached to the conveying device during the conveying process such that the metal powder is constantly heated during the conveying process so as to form the metal powder ignited at high temperature. The ignited metal powder at high temperature is led and spurted outwards by means of an air flow formed by the spurting device so as to form a spurting effect of cold firework.

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

Abstract: A method for manufacturing an array substrate, a display panel and a display device are provided. The method includes forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing plasma bombardment to the portions of the semiconductor layer exposed in the via holes; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator.

Abstract: A method for manufacturing a thin-film transistor is disclosed, which includes forming an active layer over a substrate, and performing oxidation treatment to a channel region of the active layer for controlling a carrier concentration in the channel region of the active layer. The active layer having a high carrier concentration is directly formed, and the oxidation treatment can be configured to reduce a carrier concentration of the channel region of the active layer to a level where a gating property of the thin-film transistor is still maintained. In the thin-film transistor manufactured thereby, there is a relatively small contact resistance between a source electrode and a source electrode region of the active layer and between the drain electrode and the drain electrode region of the active layer.

Abstract: The present application discloses an organic light emitting diode display substrate. The organic light emitting diode display substrate includes a base substrate; an auxiliary cathode on the base substrate; a spacer layer on the base substrate and including a plurality of spacers; and a flexible transparent conductive layer on a side of each of the plurality of spacers distal to the base substrate. The flexible transparent conductive layer is electrically connected to the auxiliary cathode.

Abstract: The disclosure discloses a display substrate, a method for fabricating the same, and a display device. The display substrate includes: a light-shielding metal layer pattern on a base substrate; a photo-sensitive sensing element layer on the light-shielding metal layer pattern, wherein an orthographic projection of the photo-sensitive sensing element layer onto the base substrate lies in an overlapping area of orthographic projections of the light-shielding metal layer pattern and the sub-pixel areas onto the base substrate; a buffer layer on the photo-sensitive sensing element layer; and a compensation control TFT and a signal line on the buffer layer, wherein a source electrode of the compensation control TFT is electrically connected with the light-shielding metal layer pattern, and the signal line is electrically connected with the photo-sensitive sensing element layer.

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

Abstract: Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.

Abstract: Provided are an array substrate, a display panel, a display apparatus and a preparation method therefor. The array substrate comprises: a base substrate; and multiple pixel units arranged on one side of the base substrate, each of the pixel units comprising: a thin-film transistor and an electroluminescent structure, and a shading structure located between the thin-film transistor and the base substrate, wherein the thin-film transistor comprises: an active layer located on one side, away from the base substrate, of the shading structure; the electroluminescent structure comprises: first electrodes for driving the pixel units; and one of the shading structure and the active layer is a same-layer structure fabricated by the same mask plate as the first electrodes so as to reduce the number of mask procedures required in preparation of an array substrate.

Abstract: A method for manufacturing an array substrate, a display panel and a display device are provided. The method includes forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing plasma bombardment to the portions of the semiconductor layer exposed in the via holes; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator.

Abstract: A thin film transistor, a method for fabricating the same, a display panel and a display device are disclosed. The method includes forming an active layer on a substrate; forming an insulating layer on the active layer and an exposed surface of the substrate; forming a first conductive layer on the insulating layer; patterning the first conductive layer and the insulating layer to form a first stack on the active layer, wherein the first stack includes a first portion of the first conductive layer and a first portion of the insulating layer, the first stack acts as a gate stack and the active layer includes a channel region below the gate stack and a source region and a drain region at two sides of the channel region; and performing plasma treatment on the first conductive layer, the source region and the drain region, to improve conductivity.

Abstract: A method for manufacturing a thin-film transistor is disclosed, which includes forming an active layer over a substrate, and performing oxidation treatment to a channel region of the active layer for controlling a carrier concentration in the channel region of the active layer. The active layer having a high carrier concentration is directly formed, and the oxidation treatment can be configured to reduce a carrier concentration of the channel region of the active layer to a level where a gating property of the thin-film transistor is still maintained. In the thin-film transistor manufactured thereby, there is a relatively small contact resistance between a source electrode and a source electrode region of the active layer and between the drain electrode and the drain electrode region of the active layer.