Abstract: Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.

Abstract: A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.

Abstract: Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device (500,600) comprises an active region (508,610) sandwiched between a first electrode (301) and a second electrode (302).

Abstract: A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800° C.

Abstract: An electrically actuated device (10) comprises an active region (30) disposed between a first electrode (12) and a second electrode (14); a substantially nonrandom distribution of dopant initiators at an interface between the active region and the first electrode; and a substantially nonrandom distribution of dopants in a portion of the active region adjacent to the interface.

Abstract: A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.

Abstract: A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided.

Abstract: Various embodiments of the present invention are direct to nanoscale, reconfigurable, two-terminal memristor devices. In one aspect, a device (400) includes an active region (402) for controlling the flow of charge carriers between a first electrode (104) and a second electrode (106). The active region is disposed between the first electrode and the second electrode and includes a storage material. Excess mobile oxygen ions formed within the active region are stored in the storage material by applying a first voltage.

Abstract: Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.

Abstract: A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical held. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.

Abstract: A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.

Abstract: Shape memory dental retention systems which facilitate the adjustment or removal of an oral appliance, e.g., a crown or bridge, from a reconfigurable abutment assembly are described. The adjustable abutment assembly may be secured to an anchoring implant bored into the bones within the mouth. The abutment assembly has a projecting abutment portion with one or more shape memory material sleeves or plates or elements extending along the abutment. Each of the sleeves has a length with at least one curved or arcuate portion. Energy may be applied to the elements such that the arcuate portion flattens to allow for the oral appliance to be placed thereupon while removal of the energy allows the elements to reconfigure into its curved configuration thereby locking the oral appliance to the abutment. Removal of the oral appliance may be effected by reapplication of energy to the elements.

Abstract: Oral appliance activation devices and methods which are used to facilitate the securement, adjustment, or removal of an oral appliance, e.g., a crown or bridge, from a reconfigurable abutment assembly are described. The adjustable abutment assembly may be secured to an anchoring implant bored into the bones within the mouth. The abutment assembly has a projecting abutment portion with one or more shape memory alloy elements extending along the projecting abutment portion. Energy may be applied to the elements via the activation devices directly over or adjacent to the oral appliance to actuate the elements and thereby either secure or loosen the oral appliance relative to the abutment.

Abstract: Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.

Abstract: The present invention provides a novel transmembrane protein, which is a nuclear factor of activated T cells (“NEAT”) receptor, and related compositions and methods.

Abstract: A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.

Abstract: A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material.

Abstract: A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode.

Abstract: A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.

Abstract: A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and the second electrode is in electrical contact with the memristive matrix and an underlying layer. At least one of the first and second electrodes is a bimetallic electrode which includes a conducting layer and a metallic layer.