Patents by Inventor Jianhua Yang

Jianhua Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RECOMBINANT T CELL LIGANDS AND ANTIBODIES THAT BIND B CELLS FOR THE TREATMENT OF AUTOIMMUNE DISEASES
    Publication number: 20130309229
    Abstract: Methods are disclosed for treating or inhibiting an autoimmune disease in a subject. In some embodiments, the disclosed methods include administering to the subject a therapeutically effective amount of one or more Major Histocompatibility Complex (MHC) molecules including covalently linked first, second and third domains; wherein the first domain is an MHC class II ?1 domain and the second domain is an MHC class II ?1 domain, wherein the amino terminus of the ?1 domain is covalently linked to the carboxy terminus of the ?1 domain; or wherein the first domain is an MHC class I ?1 domain and the second domain is an MHC class I ?2 domain, wherein the amino terminus of the ?2 domain is covalently linked to the carboxy terminus of the ?1 domain; and wherein the third domain is covalently linked to the first domain and comprises an antigen associated with the autoimmune disorder.
    Type: Application
    Filed: January 26, 2012
    Publication date: November 21, 2013
    Applicants: THE UNITED STATES GOVERNMENT AS REPRESENTED BY THE DEPARTMENT OF VETERANS AFFAIRS, OREGON HEALTH & SCIENCE UNIVERSITY
    Inventors: Jianhua Yang, Jianya Huan, Arthur A. Vandenbark
  • Memristive switch device
    Patent number: 8586959
    Abstract: A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: November 19, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, Jianhua Yang, Dmitri Strukov
  • Memory array with graded resistance lines
    Patent number: 8587985
    Abstract: A memory array with graded resistance lines includes a first set of lines intersecting a second set of lines. A line from one of the sets of lines includes a graded resistance along a length of the line.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: November 19, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, John Paul Strachan, Wei Wu, Janice H. Nickel
  • Memristive device
    Patent number: 8575585
    Abstract: A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: November 5, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Qiangfei Xia, Alexandre M. Bratkovski
  • Resistive switches
    Patent number: 8570138
    Abstract: Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: October 29, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Dmitri Borisovich Strukov, Shih-Yuan Wang
  • FLAT-PANEL DISPLAY INCLUDING MEMRISTIVE DEVICES
    Publication number: 20130271442
    Abstract: A flat-panel display system and method are disclosed. The system includes a display controller to generate image data. The system also includes a plurality of memristive pixel cells arranged in a plurality of rows and in a plurality of columns. Each of the plurality of memristive pixel cells includes a memristive device to control a respective pixel associated with the flat panel display based on the image data.
    Type: Application
    Filed: April 13, 2012
    Publication date: October 17, 2013
    Inventors: Wendi Li, Wei Yi, Wei Wu, Jianhua Yang
  • Memristive device
    Patent number: 8546785
    Abstract: A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: October 1, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Feng Miao, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • DYNAMIC OPTICAL CROSSBAR ARRAY
    Publication number: 20130250420
    Abstract: A dynamic optical crossbar array includes a first set of parallel transparent electrode lines, a bottom set of parallel electrode lines that cross said transparent electrode lines, and an optically variable material disposed between said first set of transparent electrode lines and said bottom set of electrode lines.
    Type: Application
    Filed: January 7, 2011
    Publication date: September 26, 2013
    Inventors: Jianhua Yang, Alexandre M. Bratkovski, David A. Fattal, Minxian Max Zhang
  • Memelectronic Device
    Publication number: 20130242637
    Abstract: A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
    Type: Application
    Filed: March 19, 2012
    Publication date: September 19, 2013
    Inventors: Jianhua Yang, Byungjoon Choi, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL
    Publication number: 20130234103
    Abstract: Nanoscale switching devices are disclosed. The devices have a first electrode of a nanoscale width; a second electrode of a nanoscale width; and a layer of an active region disposed between and in electrical contact with the first and second electrodes. The active region contains a switching material capable of carrying a significant amount of defects which can trap and de-trap electrons under electrical bias. The switching material is in an amorphous state. A nanoscale crossbar array containing a plurality of the devices and a method for making the devices are also disclosed.
    Type: Application
    Filed: April 22, 2013
    Publication date: September 12, 2013
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, R. Stanley Williams, Gilberto Medeiros Ribeiro
  • Electroforming free memristor and method for fabricating thereof
    Patent number: 8530873
    Abstract: An electroforming free memristor includes a first electrode, a second electrode spaced from the first electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material and reactive particles that are to react with the switching material during a fabrication process of the memristor to form one or more conductance channels in the switching layer.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: September 10, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Gilberto Medeiros Ribeiro, R Stanley Williams
  • Electrical circuit component
    Patent number: 8525146
    Abstract: An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.
    Type: Grant
    Filed: December 6, 2010
    Date of Patent: September 3, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Wei Wu, Matthew D. Pickett, Jianhua Yang, Qiangfei Xia, Gilberto Medeiros Ribeiro
  • Negative differential resistance comparator circuits
    Patent number: 8525553
    Abstract: In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: September 3, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Wei Yi, Jianhua Yang, Matthew D. Pickett, Minxian Max Zhang
  • Electroforming-free nanoscale switching device
    Patent number: 8519372
    Abstract: A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: August 27, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Shih-Yuan Wang, R. Stanley Williams, Alexandre Bratkovski, Gilberto Ribeiro
  • Oral appliance activation devices and methods
    Patent number: 8491303
    Abstract: Oral appliance activation devices and methods which are used to facilitate the securement, adjustment, or removal of an oral appliance, e.g., a crown or bridge, from a reconfigurable abutment assembly are described. The adjustable abutment assembly may be secured to an anchoring implant bored into the bones within the mouth. The abutment assembly has a projecting abutment portion with one or more shape memory alloy elements extending along the projecting abutment portion. Energy may be applied to the elements via the activation devices directly over or adjacent to the oral appliance to actuate the elements and thereby either secure or loosen the oral appliance relative to the abutment.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: July 23, 2013
    Assignee: Rodo Medical, Inc.
    Inventors: Young Seo, Jianhua Yang, Victor Chechelski, Jong Gil Park
  • Electrically actuated device
    Patent number: 8487289
    Abstract: An electrically actuated device includes a reactive metal layer, a first electrode established in contact with the reactive metal layer, an insulating material layer established in contact with the first electrode or the reactive metal layer, an active region established on the insulating material layer, and a second electrode established on the active region. A conductive nano-channel is formed through a thickness of the insulating material layer.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: July 16, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro
  • DEVICE STRUCTURE FOR LONG ENDURANCE MEMRISTORS
    Publication number: 20130175497
    Abstract: A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.
    Type: Application
    Filed: September 27, 2010
    Publication date: July 11, 2013
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • NANOSCALE SWITCHING DEVICE
    Publication number: 20130168629
    Abstract: A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed.
    Type: Application
    Filed: September 16, 2010
    Publication date: July 4, 2013
    Inventors: Gilberto Ribeiro, Janice H. Nickel, Jianhua Yang
  • Controlled placement of dopants in memristor active regions
    Patent number: 8455852
    Abstract: Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device (500,600) comprises an active region (508,610) sandwiched between a first electrode (301) and a second electrode (302). The active region including a non-volatile dopant region (506,608) selectively formed and positioned within the active region.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: June 4, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Nathaniel J. Quitoriano, Philip J. Kuekes, Jianhua Yang
  • Semiconductor memristor devices
    Patent number: 8450711
    Abstract: Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: May 28, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: R. Stanley Williams, Jianhua Yang, Duncan Stewart