Abstract: Embodiments of the present disclosure provide an improved electrostatic chuck for supporting a substrate. The electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, a plurality of tabs projecting from the substrate supporting surface of the chuck body, wherein the tabs are disposed around the circumference of the chuck body, an electrode embedded within the chuck body, the electrode extending radially from a center of the chuck body to a region beyond the plurality of tabs, and an RF power source coupled to the electrode through a first electrical connection.

Abstract: The present application provides a satellite positioning method and a satellite positioning system. The system includes a satellite, a base station, an observation station. The observation station is provided with a monitoring terminal and a correction parameters information generating apparatus, the monitoring terminal receiving observation data transmitted from the satellite; the correction parameters information generating apparatus generating a correction parameters based on the observation data, the correction parameters being transmitted to the base station.

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for a gas diffuser assembly for a vacuum chamber, the gas diffuser assembly comprising a mounting plate, the mounting plate comprising a hub, a plurality of curved spokes extending from the hub in a radial direction, a gusset portion coupled between the hub and each of the curved spokes, each of the gusset portions having a convex curve disposed in an axial direction, and one or more mounting holes coupled to the curved spokes.

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A mini LED television control system and method to reduce loss includes a power supply used for supplying power to a backlight board after a voltage is adjusted; a control board connected to the power supply, the control board including an FPGA used for detecting a current value and controlling a power supply output voltage, an analog-to-digital conversion chip used for collecting the voltages of sampling circuits, and a plurality of sampling circuits connected to a plurality of light boards and used for collecting voltages of the light boards; constant current ICs disposed on the light boards and used for providing light bar voltages and sending brightness information; and a mainboard connected to the control board and used for enabling and synchronizing backlight brightness signals. The control board converts brightness information sent by the mainboard and then sends the information to the constant current ICs on corresponding light boards.

Abstract: A method is for analyzing the correlation between different line loss actions, which records, for each individual to which line loss actions occur, all the line loss actions that occur to the individual; and counts, based on two categorization manners: by individual and by line loss action, line loss actions recorded in the database, to obtain line loss action counting results corresponding to respective categorization manners; then, based on the two counting results, collects respective multi-line loss action sequences; and acquires probability data as a data source for probability calculation, to obtain line loss action occurrence conditional probabilities for different line loss actions, so that a targeted a targeted loss reduction plan can be formulated.

Abstract: A lighting device for a vehicle. The lighting device includes an LED having a central axis. light distribution of light emitted by the LED is substantially symmetric about the central axis. The lighting device also includes a reflector for reflecting at least a portion of the emitted light. The reflector is positioned relative to the LED such that a combined light distribution of the emitted light and reflected light is not symmetric about the central axis and a maximum light intensity direction of the combined light distribution of the emitted light and the reflected light is angled with respect to the central axis. The position of the reflector relative to the light-emitting semiconductor device is adjustable such that an adjustment to the position of the reflector changes a direction of the maximum light intensity direction of the combined light distribution.

Abstract: A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: This application provides a data writing method and a storage device. The method is applied to a solid-state storage device SSD, and the method includes: receiving a write command, where the write command carries a type of to-be-written data; determining, based on the type of to-be-written data, a type of storage area that is in an SSD and into which the to-be-written data is written, where the SSD includes a plurality of types of storage areas; determining, based on the type of storage area, a target storage area into which the to-be-written data is written; and writing the to-be-written data into the target storage area. In embodiments of this application, data processing efficiency can be improved.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

Abstract: Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.

Abstract: A redundant array of independent disks (RAID) management method includes, when detecting that a component in a storage medium fails, recovering, based on a RAID policy, data stored in the failed component, saving the recovered data into a pre-defined redundant space of the RAID, and mapping an address of the failed component with the address of the redundant space, converting, according to the mapping, an address of to-be-accessed data comprised in an accessing request into an address within the redundant space, and accessing the to-be-accessed data from the redundant space according to the address within the redundant space.

Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.

Abstract: A water-based viscosity reducer for emulsifying ultra-heavy oil and a preparation method thereof is provided, where the viscosity reducer includes the following components (based on 100 parts by weight): 0.7 to 4 parts of surfactant, 0 to 10 parts of oil phase, and the balance being a water phase; and the preparation method thereof is stirring the surfactant, the oil phase, and the water phase at room temperature for mixing evenly, to form the water-based viscosity reducer for emulsifying ultra-heavy oil. The invention greatly improves the overall surface activity by using the synergistic effect generated by the compounding of surfactants, and can significantly reduce oil-water interfacial tension. It is especially suitable for emulsifying viscosity reduction of alkali-sensitive stratum, has characteristics such as low cost, safety, and simple preparation, and can effectively enhance heavy oil recovery.

Abstract: A first storage node is connected to a host by using a first network interface card of the first storage node, and is connected to a second storage node by using a second network interface card. The first storage node receives a data processing request from the host, wherein the data processing request carries a target storage address of to-be-processed data, determines the second storage node based on the target storage address of the to-be-processed data, and sends the data processing request to the second storage node by using the second network interface card, wherein the data processing request instructs the second storage node to process the to-be-processed data.