Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Abstract: The present application provides a method for navigation and positioning of a receiver, including: receiving basic broadcast messages and correction parameters of a plurality of satellites, and establishing a pseudorange observation equation and a carrier-phase observation equation corresponding to each of satellites respectively; correcting the pseudorange observation equation and the carrier-phase observation equation using the received correction parameters to obtain the corrected pseudorange observation equation and the corrected carrier-phase observation equation; constructing a first observation according to the corrected pseudorange observation equation and the corrected carrier-phase observation equation; constructing a second observation according to the corrected pseudorange observation equation and the corrected carrier-phase observation equation; and jointly solving the obtained first observations and second observations of the plurality of satellites to obtain anoperation result of user positioni

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Abstract: The present invention provides a message broadcast apparatus and method for enhanced parameters in a satellite navigation system. The apparatus includes: a processor, which determines the insertion position of the enhanced parameter in the reserved space in the navigation message frame structure model according to the byte size and the broadcast frequency of the enhanced parameter that needs to be broadcast, so as to perform the message arrangement of the enhanced parameter; and a transmitter, which uploads the arranged message to the broadcast satellite for broadcasting the message.

Abstract: A processing chamber is described having a gas evacuation flow path from the center to the edge of the chamber. Purge gas is introduced at an opening around a support shaft that supports a heater plate. A shaft wall around the opening directs the purge gas along the support shaft to an evacuation plenum. Gas flows from the evacuation plenum through an opening in a second plate near the shaft wall and along the chamber bottom to an opening coupled to a vacuum source. Purge gas is also directed to the slit valve.

Abstract: A lighting device for a vehicle. The lighting device includes an LED having a central axis. light distribution of light emitted by the LED is substantially symmetric about the central axis. The lighting device also includes a reflector for reflecting at least a portion of the emitted light. The reflector is positioned relative to the LED such that a combined light distribution of the emitted light and reflected light is not symmetric about the central axis and a maximum light intensity direction of the combined light distribution of the emitted light and the reflected light is angled with respect to the central axis. The position of the reflector relative to the light-emitting semiconductor device is adjustable such that an adjustment to the position of the reflector changes a direction of the maximum light intensity direction of the combined light distribution.

Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

Abstract: Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

Abstract: A transportation refrigeration system includes an enclosure, and at least two compartments within the enclosure to be conditioned to two distinct temperatures. A refrigeration is circuit associated with each of the at least two compartments. A first refrigeration circuit includes a first compressor, a first evaporator, and a first expansion valve. A second refrigeration circuit includes a second compressor, a second evaporator, and a second expansion valve. The first and second refrigeration circuits utilize a common condenser, with first inlets into the condenser from the first circuit connected to a first flow passage and second inlets from the second circuit connected to second flow passages. First and second outlets are connected to the first and second flow passages. The first and second flow passages are staggered in a direction perpendicular to a flow passage across the condenser. A heat exchanger is also disclosed.

Abstract: A solid state disk using method includes: determining a latency of the data block to-be-operated according to a load balancing table of the solid state disk; determining whether the latency of the data block is greater than a warning value, where the warning value is less than a typical latency, which is a preset latency indicating an operation on a data block in the solid state disk fails; and not performing the operation on the data block if the latency of the data block is greater than the warning value. By using this method, real load balancing from the perspective of physical property is achieved, bad blocks are reduced, use of reserved blocks is reduced, thereby prolonging the service life of the SSD.

Abstract: An organic light-emitting diode (OLED) drive power device and OLED television, OLED drive power device comprising power board connected to motherboard and OLED screen logic board, power board having power supply circuit, first conversion module, second conversion module, changeover switch and power factor correction (PFC) circuit thereon; after powered, power supply circuit starts PFC circuit to output high-voltage direct current (HVDC) according to on-off signal output by motherboard, first conversion module converts HVDC into first voltage and second voltage to power motherboard, and first voltage is converted to power OLED screen logic board; after preset time period, HVDC is converted to power OLED screen logic board to light OLED screen. Redesigning architecture of power board eliminates need for standby circuit and streamlines circuits, meets power output stability and timing requirements of OLED, reduces power board size, reduces power cost and benefits OLED popularization.

Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft and a heater. The heater has a body. The body has a top surface, a side surface and a bottom surface. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius.

Abstract: A data accessing method includes: determining whether a preset cache area has cached data that a read target address points to when receiving a read instruction that includes the read target address; and finding a cache address corresponding to the read target address according to a first mapping relationship if the preset cache area has cached the data that the read target address points to, and reading data that the cache address points to from the preset cache area, where the first mapping relationship is used to record a correspondence between the target address and the cache address; orreading, from non-volatile storage space, the data that the read target address points to if the preset cache area has not cached the data that the read target address points to. By means of the method, data read errors caused by write interference can be reduced.

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.