Abstract: A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.

Abstract: A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.

Abstract: An etching machine comprises a cleaning solution sprayer, further comprising at least a first nozzle positioned above a center of the wafer and a second nozzle positioned above an edge of the wafer. The semiconductor wafer is spun and simultaneously a cleaning solution is sprayed on the center and the edge of the wafer via the first nozzle and the second nozzle, respectively, to evenly rinse the residual etching solution on the surface of the wafer. The semiconductor wafer is spun dry with a nitrogen purge on the wafer surface at the end of the method.

Abstract: An etching machine comprises a cleaning solution sprayer, further comprising at least a first nozzle positioned above a center of the wafer and a second nozzle positioned above an edge of the wafer. The semiconductor wafer is spun and simultaneously a cleaning solution is sprayed on the center and the edge of the wafer via the first nozzle and the second nozzle, respectively, to evenly rinse the residual etching solution on the surface of the wafer. The semiconductor wafer is spun dry with a nitrogen purge on the wafer surface at the end of the method.

Abstract: A method of forming a metal-insulator-metal (MIM) capacitor is disclosed. The method provides a three dimensional MIM capacitor having upgraded capacitance. A plurality of trenches are formed within the MIM capacitor to increase the charge storage area of the MIM capacitor without occupying additional planar area thereby upgrade the capacitance of the MIM capacitor and the integration.