MULTI CAP LAYER AND MANUFACTURING METHOD THEREOF
A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.
1. Field of the Invention
The present invention relates to a multi cap layer and manufacturing method thereof, and more particularly, to a multi cap layer used in damascene interconnect processes.
2. Description of the Prior Art
Damascene interconnect processes incorporated with copper are known in the art, which are also referred to as “copper damascene processes” in the semiconductor industry. Generally, the copper damascene processes are categorized into single damascene process and dual damascene process. Because the dual damascene has advantages of simplified processes, lower contact resistance between wires and plugs, and improved reliance, it is widely applied in damascene interconnect technique. In addition, to reducing resistance and parasitic capacitance of the multi-level interconnect and improving speed of signal transmission, the dual damascene interconnect in state-of-the-art is fabricated by filling trench or via patterns located in dielectric layer which comprise low-K material with copper and performing a planarization process to obtain a metal interconnect. According to the patterns located in the dielectric layer, the dual damascene process is categorized into trench-first process, via-first process, partial-via-first process, and self-aligned process.
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Generally, the cap layer 18 is a silicon oxide layer such as a tetra-ethyl-ortho-silicate (TEOS) based silicon oxide layer with TEOS used as a precursor. The TEOS layer comprises a compressive stress. When the TEOS layer contacts the ULK layer 16 directly, the compressive stress of the TEOS layer causes line distortion in the ULK layer 16. Moreover, since the TEOS layer is apt to absorb water, the absorbed water is then desorpted in following process and gets into the ULK layer 16, thus Kelvin via open are formed, which will reduce reliability of the process and influence electrical performance of the damascene interconnects formed followed.
SUMMARY OF THE INVENTIONTherefore the present invention provides a multi cap layer and a manufacturing method thereof to prevent line distortion and Kelvin via open formation.
According to the claimed invention, a method for manufacturing a multi cap layer is provided. The method comprises steps of providing a substrate comprising at least a conductive layer, a base layer, and a dielectric layer, forming a multi cap layer comprising at least a first cap layer and a second cap layer formed on the first cap layer on the substrate, forming a patterned metal hard mask layer on the multi cap layer, performing an etching process to etch the multi cap layer through the patterned metal hard mask layer and to form at least an opening in the second cap layer.
According to the claimed invention, another method for manufacturing a multi cap layer is provided. The method comprises steps of providing a substrate comprising at least a conductive layer, a base layer, and a dielectric layer, and forming a multi cap layer comprising at least a tensile stress layer and a first protecting layer. The tensile stress layer is thicker than the first protecting layer.
According to the claimed invention, a multi cap layer is provided. The multi cap layer comprises a first protecting layer and a tensile stress layer comprising a thickness larger than that of the first protecting layer.
According to the claimed invention, another multi cap layer is provided. The multi cap layer comprises a first protecting layer, a tensile stress layer positioned on the first protecting layer, and a second protecting layer positioned on the tensile stress layer.
According to the multi cap layer and manufacturing method thereof provided by the present invention, line distortion due to stress in pre-layer is prevented. In addition, because the protecting layer of the multi cap layer effectively prevents the multi cap layer from water absorption, the Kelvin via open resulted by water desorpted from multi cap layer in following processes is also avoided.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
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The first cap layer 112 and the second cap layer 114 are TEOS layers. As shown in
It is noteworthy that the tensile stress TEOS layer has a tensile stress of about 50-100 MPa and the hermetical TEOS layer has a compressive stress of about −150-−300 MPa.
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The first cap layer 212 and the second cap layer 214 are TEOS layers. The first cap layer 212 is a hermetical TEOS layer while the second cap layer 114 is a tensile stress TEOS layer. Please note that a thickness Y of the tensile stress TEOS layer is larger than a thickness X of the hermetical TEOS layer. The deposition process used to form the tensile stress TEOS layer is performed at a high-frequency RF power of about 750-850 Watts and a low-frequency RF power of about 100-200 Watts. The deposition process used to form the hermetical TEOS layer is performed at a high-frequency RF power of about 230-330 Watts and a low-frequency RF power of about 10-100 Watts. The tensile stress TEOS layer has a tensile stress of about 50-100 MPa and the hermetical TEOS layer has a compressive stress of about −150-−300 MPa. Next, a patterned hard mask layer is formed on the multi cap layer 110 for following processes as mentioned above. Because the processes are the same with the first preferred embodiment, further description of the process is omitted in the interest of brevity in the second embodiment.
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According to the multi cap layer 210 provided by the second preferred embodiment, the dielectric layer 206 is prevented from being directly influenced by the compressive stress provided by the first cap layer 212 and the third cap layer 216 of the multi cap layer 210 due to the thicker second cap layer 214 acting as a buffer in between. Therefore line distortion in the dielectric layer 206 is prevented. Secondly, water is blocked from the second cap layer 214 by the third cap layer 216 in the etching process, while water desorbed from the second cap layer 214 is also blocked from the dielectric layer 206 by the first cap layer 212. Therefore the water absorption in the dielectric layer 206 is prevented and the Kelvin via open is also prevented. Please refer to
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According to multi cap layer 110 and 210 provided by the first and second preferred embodiments, a pre-layer is prevented from being directly influenced by the stress provided by the first protecting layer of the multi cap layer due to the thicker tensile stress layer acting as a buffer in between. Therefore line distortion in the pre-layer is prevented. Secondly, since the first protecting layer is a hermetical TEOS layer, water from the etching process is blocked from the tensile stress layer by the first protecting layer, or the water absorption from the tensile stress layer is prevented. Thus the Kelvin via caused by water desorption from the tensile stress layer in following processes is also prevented.
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According to the second preferred embodiment, the compressive stress provided by the first protecting layer and the third protecting layer of the multi cap layer is eased off by the thicker tensile stress layer in between. Therefore line distortion in pre-layer is prevented. Secondly, water is blocked from the tensile stress layer by the second protecting layer in the etching process, while the desorbed water is also blocked from the pre-layer by the first protecting layer in following processes. Therefore the water absorptions in the tensile stress layer and in pre-layer are both prevented. Thus the Kelvin via is also prevented.
In summary, according to the multi cap layer and manufacturing method thereof provided by the present invention, line distortion due to stress in pre-layer is prevented. In addition, because the protecting layer of the multi cap layer effectively prevents the pre-layer from water absorption, the Kelvin via is also avoided.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims
1. A method for manufacturing a multi cap layer comprising steps of:
- providing a substrate comprising at least a conductive layer, a base layer, and a dielectric layer;
- forming a multi cap layer comprising at least a first cap layer and a second cap layer formed on the first cap layer on the substrate;
- forming a patterned metal hard mask layer on the multi cap layer; and
- performing an etching process to etch the multi cap layer through the patterned metal hard mask layer and to form at least an opening in the second cap layer.
2. The method of claim 1, wherein the dielectric layer comprises ultra low-K material.
3. The method of claim 2, wherein the dielectric layer comprises a tensile stress in a range of 30-80 mega Pascal (MPa).
4. The method of claim 1, wherein the first cap layer and the second cap layer comprise tetra-ethyl-ortho-silicate (TEOS) respectively formed by a deposition process.
5. The method of claim 4, wherein the deposition processes comprise a plasma-enhanced vapor deposition (PECVD) process, a sub-atmosphere chemical vapor deposition (SACVD) process, or a low pressure chemical vapor deposition (LPCVD) process.
6. The method of claim 4, wherein the deposition processes used to form the first cap layer and the second cap layer are performed in an in-situ manner.
7. The method of claim 4, wherein the first cap layer is a tensile stress TEOS layer and the second cap layer is a hermetical TEOS layer.
8. The method of claim 7, wherein the tensile stress TEOS layer is thicker than the hermetical TEOS layer.
9. The method of claim 7, wherein the deposition process used to form the tensile stress TEOS layer is performed at a high-frequency RF power of 750-850 Watts and a low-frequency RF power of 100-200 Watts.
10. The method of claim 7, wherein the deposition process used to form the hermetical TEOS layer is performed at a high-frequency RF power of 230-330 Watts and a low-frequency RF power of 10-100 Watts.
11. The method of claim 7, wherein the tensile stress TEOS layer has a tensile stress of 50-100 MPa and the hermetical TEOS layer has a compressive stress of −150-−300 MPa.
12. The method of claim 4, wherein the first cap layer is a hermetical TEOS layer and the second cap layer is a tensile stress TEOS layer.
13. The method of claim 12, wherein the tensile stress TEOS layer is thicker than the hermetical TEOS layer.
14. The method of claim 12, wherein the deposition process used to form the hermetical TEOS layer is performed at a high-frequency RF power of 230-330 Watts and a low-frequency RF power of 10-100 Watts.
15. The method of claim 12, wherein the deposition process used to form the tensile stress TEOS layer is performed at a high-frequency RF power of 750-850 Watts and a low-frequency RF power of 100-200 Watts.
16. The method of claim 12, wherein the tensile stress TEOS layer has a tensile stress of 50-100 MPa and the hermetical TEOS layer has a compressive stress of −150-−300 MPa.
17. The method of claim 12 further comprising a third cap layer formed on the second cap layer.
18. The method of claim 17, wherein the cap layer is a hermetical TEOS layer formed by a deposition process.
19. The method of claim 18, wherein the deposition process comprises a PECVD process, a SACVD process, or a LPCVD process.
20. The method of claim 18, wherein the hermetical TEOS layer has a compressive stress of −150-−300 MPa.
21. The method of claim 18, wherein the deposition processes used to form the first cap layer, the second cap layer, and the third cap layer are performed in an in-situ manner.
22. The method of claim 18, wherein the deposition process used to form the hermetical TEOS layer is performed at a high-frequency RF power of 230-330 Watts and a low-frequency RF power of 10-100 Watts.
23. The method of claim 17, wherein the opening is formed in the second cap layer and the third cap layer.
24. The method of claim 1, wherein the opening comprises a trench opening or a via opening of a damascene structure.
25. A method for manufacturing a multi cap layer comprising steps of:
- providing a substrate comprising at least a conductive layer, a base layer, and a dielectric layer; and
- forming a multi cap layer comprising at least a tensile stress layer and first protecting layer, the tensile stress layer being thicker than the first protecting layer.
26. The method of claim 25, wherein the dielectric layer comprises ultra low-K material.
27. The method of claim 26, wherein the dielectric layer comprises a tensile stress in a range of 30-80 MPa.
28. The method of claim 25, wherein the tensile stress layer has a tensile stress of 50-100 MPa.
29. The method of 25, wherein the tensile stress layer and the first protecting layer comprise tetra-ethyl-ortho-silicate (TEOS) respectively formed by a deposition process.
30. The method of claim 29, wherein the deposition processes comprise a PECVD process, a SACVD process, or a LPCVD process.
31. The method of claim 29, wherein the deposition processes used to form the tensile stress layer and the first protecting layer are performed in an in-situ manner.
32. The method of claim 29, wherein deposition process used to form the tensile stress layer is performed at a high-frequency RF power of 750-850 Watts and a low-frequency RF power of 100-200 Watts.
33. The method of claim 25, wherein the first protecting layer is a hermetical TEOS layer.
34. The method of claim 33, wherein deposition process used to form the hermetical TEOS layer is performed at a high-frequency RF power of 230-330 Watts and a low-frequency RF power of 10-100 Watts.
35. The method of claim 33, wherein the hermetical TEOS layer has a compressive stress of −150-−300 MPa.
36. The method of claim 25, wherein the first protecting layer is formed upon the tensile stress layer.
37. The method of claim 25, wherein the tensile stress layer is formed upon the first protecting layer.
38. The method of claim 37 further comprising a step of performing a deposition process to form a second protecting layer on the tensile stress layer after forming the multi cap layer.
39. The method of claim 38, wherein the second protecting layer is a hermetical TEOS layer.
40. The method of claim 38, wherein the deposition process comprises a PECVD process, a SACVD process, or a LPCVD.
41. The method of claim 38, wherein the deposition processes used to form the tensile stress layer, the first protecting layer, and the second protecting layer are performed in an in-situ manner.
42. The method of claim 38, wherein the deposition process used to form the second protecting layer is performed at a high-frequency RF power of 230-330 Watts and a low-frequency RF power of 10-100 Watts.
43. The method of claim 38, wherein the second protecting layer has a compressive stress of −150-−300 MPa.
44. The method of claim 38, wherein a thickness of the tensile stress layer is larger than a sum of a thickness of the first protecting layer and a thickness of the second protecting layer.
45. The method of claim 44, wherein the thickness of the second protecting layer, the tensile stress layer, and the second protecting layer have a ratio in a range of 1:2:1 to 1:10:1.
46. The method of claim 45, wherein the ratio of the thickness of the second protecting layer, the tensile stress layer, and the second protecting layer is preferably 1:3:1.
47. A multi cap layer comprises:
- a first protecting layer; and
- a tensile stress layer comprising a thickness larger than a thickness of the first protecting layer.
48. The multi cap layer of claim 47, wherein the first protecting layer and the tensile stress layer comprises TEOS.
49. The multi cap layer of claim 48, wherein the first protecting layer is a hermetical TEOS layer.
50. The multi cap layer of claim 47, wherein the tensile stress layer has a tensile stress of 50-100 MPa and the first protecting layer has a compressive stress of −150-−300 MPa.
51. The multi cap layer of claim 47, wherein the first protecting layer is positioned on the tensile stress layer.
52. The multi cap layer of claim 47, wherein the tensile stress layer is positioned on the first protecting layer.
53. The multi cap layer of claim 52 further comprising a second protecting layer formed on the tensile stress layer.
54. The multi cap layer of claim 53, wherein the second protecting layer comprise TEOS.
55. The multi cap layer of claim 54, wherein the second protecting layer is a hermetical TEOS layer.
56. The multi cap layer of claim 53, wherein the second protecting layer has a compressive stress of −150-−300 MPa.
57. The multi cap layer of claim 53, wherein the thickness of the tensile stress layer is larger than a sum of a thickness of the first protecting layer and a thickness of the second protecting layer.
58. The multi cap layer of claim 57, wherein the thickness of the second protecting layer, the tensile stress layer, and the second protecting layer have a ratio in a range of 1:2:1 to 1:10:1.
59. The multi cap layer of claim 58, wherein the ratio of the thickness of the second protecting layer, the tensile stress layer, and the second protecting layer is preferable 1:3:1.
60. A multi cap layer comprising:
- a first protecting layer;
- a tensile stress layer positioned on the first protecting layer; and
- a second protecting layer positioned on the tensile stress layer.
61. The multi cap layer of claim 60, where in the first protecting layer, the tensile stress layer, and the second protecting layer comprise TEOS.
62. The multi cap layer of claim 61, wherein the first protecting layer and second protecting layer are hermetical TEOS layers respectively.
63. The multi cap layer of claim 60, wherein the tensile stress layer has a tensile stress layer of 50-100 MPa.
64. The multi cap layer of claim 60, wherein the first protecting layer and the second protecting layer respectively have a compressive stress of −150-−300 MPa.
65. The multi cap layer of claim 60, wherein a thickness of the tensile stress layer is larger than a sum of a thickness of the first protecting layer and a thickness of the second protecting layer.
66. The multi cap layer of claim 65, wherein the thickness of the second protecting layer, the tensile stress layer, and the second protecting layer have a ratio in a range of 1:2:1 to 1:10:1.
67. The multi cap layer of claim 66, wherein the ratio of the thickness of the second protecting layer, the tensile stress layer, and the second protecting layer is preferably 1:3:1.
Type: Application
Filed: Apr 11, 2007
Publication Date: Oct 16, 2008
Patent Grant number: 8084357
Inventors: Wei-Chih Chen (Tainan County), Su-Jen Sung (Hsin-Chu Hsien), Feng-Yu Hsu (Tainan Hsien), Chun-Chieh Huang (Tainan Hsien), Mei-Ling Chen (Kao-Hsiung City), Jiann-Jen Chiou (Tainan County)
Application Number: 11/733,763
International Classification: H01L 21/4763 (20060101); H01L 23/48 (20060101);