Abstract: A trajectory prediction apparatus is configured to execute the following operations. A reference path line is selected from multiple path lines of a scene based on multiple first trajectory coordinates of an object, wherein the first trajectory coordinates and the path lines correspond to a first coordinate system. The first trajectory coordinates of the first coordinate system are transformed into multiple second trajectory coordinates corresponding to a second coordinate system, wherein the second trajectory coordinates indicate relationships of the object corresponding to the reference path line. A predicted trajectory of the object is generated based on the second trajectory coordinates by using a prediction model.

Abstract: A method for vehicle motion forecasting includes the following steps. A lane graph structure is generated according to a raw map data. Multiple occupancy flow graphs which are homogeneous to data format of the lane graph structure are established according to trajectory data of a plurality of vehicles in multiple consecutive frames and the lane graph structure. Multiple temporal edges between the occupancy flow graphs are established according to the trajectory data of the vehicles in the consecutive frames to construct a temporal occupancy flow graph. Feature aggregation is performed on the temporal occupancy flow graph to generate multiple updated node features, and a motion forecasting of an ego-vehicle is generated according to the updated node features.

Abstract: In general, the disclosure is directed to bulk iron-nitride materials having a polycrystalline microstructure having pores including a plurality of crystallographic grains surrounded by grain boundaries, where at least one crystallographic grain includes an iron-nitride phase including any of a body centered cubic (bcc) structure, a body centered tetragonal (bct), and a martensite structure. The disclosure further describes techniques producing a bulk iron-nitride material having a polycrystalline microstructure, including: melting an iron source to obtain a molten iron source; fast belt casting the molten iron source to obtain a cast iron source; cooling and shaping the cast iron source to obtain a bulk iron-containing material having a body-centered cubic (bcc) structure; annealing the bulk iron-containing material at an austenite transformation temperature and subsequently cooling the bulk iron-containing material; and nitriding the bulk iron-containing material to obtain the bulk iron-nitride material.

Abstract: A scene encoding generating apparatus is configured to execute the following operations. The scene encoding generating apparatus generates a local coordinate system based on a position and a movement state corresponding to each of a plurality of obstacles in a time point. The scene encoding generating apparatus transforms the position and the movement state corresponding to each of the obstacles to the corresponding local coordinate system to generate a local position and a local movement state. The scene encoding generating apparatus generates an obstacle tensor corresponding to the obstacles based on the local positions and the local movement states corresponding to the obstacles, wherein the obstacle tensor is corresponding to the time point. The scene encoding generating apparatus inputs the obstacle tensor into a scene encoder to generate a scene encoding, wherein the scene encoding is configured to be inputted into a decoder to generate a trajectory prediction.

Abstract: Techniques are disclosed concerning applied magnetic field synthesis and processing of iron nitride magnetic materials. Some methods concern casting a material including iron in the presence of an applied magnetic field to form a workpiece including at least one iron-based phase domain including uniaxial magnetic anisotropy, wherein the applied magnetic field has a strength of at least about 0.01 Tesla (T). Also disclosed are workpieces made by such methods, apparatus for making such workpieces and bulk materials made by such methods.

Abstract: The disclosure describes a method that includes forming a soft magnetic material by a technique including melt spinning. The soft magnetic material includes at least one of: at least one of an ??-Fe16(NxZ1-x)2 phase domain or an ??-Fe8(NxZ1-x), where Z includes at least one of C, B, or O, and where x is a number greater than zero and less than one; or at least one of an ??-Fe16N2 phase domain or an ??-Fe8N phase domain, and at least one of an ??-Fe16Z2 phase domain or an ??-Fe8Z phase domain.

Abstract: In general, the disclosure is directed to bulk iron-nitride materials having a polycrystalline microstructure having pores including a plurality of crystallographic grains surrounded by grain boundaries, where at least one crystallographic grain includes an iron-nitride phase including any of a body centered cubic (bcc) structure, a body centered tetragonal (bct), and a martensite structure. The disclosure further describes techniques producing a bulk iron-nitride material having a polycrystalline microstructure, including: melting an iron source to obtain a molten iron source; fast belt casting the molten iron source to obtain a cast iron source; cooling and shaping the cast iron source to obtain a bulk iron-containing material having a body-centered cubic (bcc) structure; annealing the bulk iron-containing material at an austenite transformation temperature and subsequently cooling the bulk iron-containing material; and nitriding the bulk iron-containing material to obtain the bulk iron-nitride material.

Abstract: Techniques are disclosed concerning applied magnetic field synthesis and processing of iron nitride magnetic materials. Some methods concern casting a material including iron in the presence of an applied magnetic field to form a workpiece including at least one iron-based phase domain including uniaxial magnetic anisotropy, wherein the applied magnetic field has a strength of at least about 0.01 Tesla (T). Also disclosed are workpieces made by such methods, apparatus for making such workpieces and bulk materials made by such methods.

Abstract: A device which includes a free layer and a current channel. The free layer has a configurable magnetization state. The current channel includes a low-symmetry crystal with only one mirror plane. The low-symmetry material has relatively large unconventional spin Hall effect (SHE). A current through the current channel applies a spin-orbit torque that sets the magnetization state of the free layer.

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an ??-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material.

Abstract: All example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average wain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including au iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 ma. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: A circuit includes a first two-state device, a second two-state device and a third two-state device, each two-state device having a first resistance in a first state and a second resistance in a second state. First control elements are configured to apply a first voltage to the first two-state device to stochastically place the first two-state device in either the first state or the second state. Second control elements are configured to apply a second voltage to the second two-state device to stochastically place the second two-state device in either the first state or the second state. Third control elements are configured to send respective currents through the first two-state device and the second two-state device so as to place the third two-state device in either the first state or the second state based on the state of the first two-state device and the state of the second two-state devices.

Abstract: Example nanoparticles may include an iron-based core, and a shell. The shell may include a non-magnetic, anti-ferromagnetic, or ferrimagnetic material. Example alloy compositions may include an iron-based grain, and a grain boundary. The grain boundary may include a non-magnetic, anti-ferromagnetic, or ferrimagnetic material. Example techniques for forming iron-based core-shell nanoparticles may include depositing a shell on an iron-based core. The depositing may include immersing the iron-based core in a salt composition for a predetermined period of time. The depositing may include milling the iron-based core with a salt composition for a predetermined period of time. Example techniques for treating a composition comprising core-shell nanoparticles may include nitriding the composition.

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an ??-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material.

Abstract: An example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average grain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including an iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 nm. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: Disclosed are energy efficient ferroelectric devices and methods for making such devices. For example, a ferroelectric device may be a ferroelectric tunneling junction device that includes a graphene layer on a substrate. A tunneling layer may be disposed on a portion of the graphene layer. The tunneling layer may be a ferroelectric material. A metal electrical contact layer may be disposed over the tunneling layer and the graphene layer. Additionally, some embodiments may have an additional monolayer disposed between the tunneling layer and graphene layer. By specific engineering of such layers, tunneling electroresistance performance may be substantially improved.

Abstract: Example nanoparticles may include an iron-based core, and a shell. The shell may include a non-magnetic, anti-ferromagnetic, or ferrimagnetic material. Example alloy compositions may include an iron-based grain, and a grain boundary. The grain boundary may include a non-magnetic, anti-ferromagnetic, or ferrimagnetic material. Example techniques for forming iron-based core-shell nanoparticles may include depositing a shell on an iron-based core. The depositing may include immersing the iron-based core in a salt composition for a predetermined period of time. The depositing may include milling the iron-based core with a salt composition for a predetermined period of time. Example techniques for treating a composition comprising core-shell nanoparticles may include nitriding the composition.

Abstract: A permanent magnet may include a Fe16N2 phase constitution. In some examples, the permanent magnet may be formed by a technique that includes straining an iron wire or sheet comprising at least one iron crystal in a direction substantially parallel to a <001> crystal axis of the iron crystal; nitridizing the iron wire or sheet to form a nitridized iron wire or sheet; annealing the nitridized iron wire or sheet to form a Fe16N2 phase constitution in at least a portion of the nitridized iron wire or sheet; and pressing the nitridized iron wires and sheets to form bulk permanent magnet.

Abstract: A permanent magnet may include a Fe16N2 phase constitution. In some examples, the permanent magnet may be formed by a technique that includes straining an iron wire or sheet comprising at least one iron crystal in a direction substantially parallel to a <001> crystal axis of the iron crystal; nitridizing the iron wire or sheet to form a nitridized iron wire or sheet; annealing the nitridized iron wire or sheet to form a Fe16N2 phase constitution in at least a portion of the nitridized iron wire or sheet; and pressing the nitridized iron wires and sheets to form bulk permanent magnet.

Abstract: A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.