Abstract: A material may include at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.

Abstract: A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe16N2 phase domain. The applied magnetic field may have a strength of at least about 0.2 Tesla (T).

Abstract: This disclosure describes various examples of spintronic temperature sensors. The example temperature sensors may be discrete or used to adaptively control operation of a component such as an integrated circuit (IC). In one example, an electronic device comprises a spintronic component configured such that the conductance of the spintronic component is based on sensed temperature. In one example, circuitry coupled to the spintronic component is configured to generate an electrical signal indicative of the sensed temperature based on the conductance of the spintronic component.

Abstract: Nanoparticle deposition systems including one or more of: a hollow target of a material; at least one rotating magnet providing a magnetic field that controls movement of ions and crystallization of nanoparticles from released atoms; a nanoparticle collection device that collects crystallized nanoparticles on a substrate, wherein relative motion between the substrate and at least a target continuously expose new surface areas of the substrate to the crystallized nanoparticles; a hollow anode with a target at least partially inside the hollow anode; or a first nanoparticle source providing first nanoparticles of a first material and a second nanoparticle source providing second nanoparticles of a second material.

Abstract: Techniques are described for data transfer in spin-based systems where digital bit values are represented by magnetization states of magnetoresistive devices rather than voltages or currents. For data transmission, a spin-based signal is converted to an optical signal and transmitted via an optical transport. For data reception, the optical signal is received via the optical transport and converted back to a spin-based signal. Such data transfer may not require an intervening conversion of the spin-based signal to charge-based signal that relies on voltages or currents to represent digital bit values. In addition, techniques are described to use magnetoresistive devices to control the amount of current or voltage that is delivered, where the magnetization state of the magnetoresistive device is set by an optical signal.

Abstract: A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe16N2 phase domain. The applied magnetic field may have a strength of at least about 0.2 Tesla (T).

Abstract: A biosensor includes a magnetic structure having grooved surface to biologically bond magnetic labels to a biological substance within the grooves. The grooves are positioned within the magnetic structure so that stray magnetic fields from the magnetic structure magnetize magnetic labels within the groove. The magnetic labels may be magnetic nanoparticles or magnetic microbeads. The techniques may reduce or eliminate the usage of any external magnetic field generator, e.g., electromagnets or current lines.

Abstract: Techniques are disclosed concerning applied magnetic field synthesis and processing of iron nitride magnetic materials. Some methods concern casting a material including iron in the presence of an applied magnetic field to form a workpiece including at least one ironbased phase domain including uniaxial magnetic anisotropy, wherein the applied magnetic field has a strength of at least about 0.01 Tesla (T). Also disclosed are workpieces made by such methods, apparatus for making such workpieces and bulk materials made by such methods.

Abstract: Techniques are described for a device that includes an optical channel configured to transport an optical signal. The device further includes a magnetic material with low optical absorption through which a portion of the optical signal is configured to flow. The magnetic material is configured to receive an electrical signal that sets a magnetization state of the magnetic material. The magnetic material is further configured to modulate, based on the magnetization state, the portion of the optical signal flowing though the magnetic material.

Abstract: Techniques are disclosed for milling an iron-containing raw material in the presence of a nitrogen source to generate anisotropically shaped particles that include iron nitride and have an aspect ratio of at least 1.4. Techniques for nitridizing an anisotropic particle including iron, and annealing an anisotropic particle including iron nitride to form at least one a?-Fe16N2 phase domain within the anisotropic particle including iron nitride also are disclosed. In addition, techniques for aligning and joining anisotropic particles to form a bulk material including iron nitride, such as a bulk permanent magnet including at least one a?-Fe16N2 phase domain, are described. Milling apparatuses utilizing elongated bars, an electric field, and a magnetic field also are disclosed.

Abstract: A permanent magnet may include a Fe16N2 phase in a strained state. In some examples, strain may be preserved within the permanent magnet by a technique that includes etching an iron nitride-containing workpiece including Fe16N2 to introduce texture, straining the workpiece, and annealing the workpiece. In some examples, strain may be preserved within the permanent magnet by a technique that includes applying at a first temperature a layer of material to an iron nitride-containing workpiece including Fe16N2, and bringing the layer of material and the iron nitride-containing workpiece to a second temperature, where the material has a different coefficient of thermal expansion than the iron nitride-containing workpiece. A permanent magnet including an Fe16N2 phase with preserved strain also is disclosed.

Abstract: In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.

Abstract: A magnetic biosensor can include a magnetic stack comprising a free layer, a fixed layer, and a nonmagnetic layer between the free layer and the fixed layer. At least one of the free layer or the fixed layer may have a magnetic moment oriented out of a major plane of the free layer or the fixed layer, respectively, in an absence of an external magnetic field. The magnetic biosensor also may include a sample container disposed over the magnetic stack, a plurality of capture antibodies attached to a bottom surface of the sample container above the magnetic stack, and a magnetic field generator configured to generate a magnetic field substantially perpendicular to the major plane of the free layer or fixed layer.

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

Abstract: Techniques are described for a device that includes an optical channel configured to transport an optical signal. The device further includes a magnetic material with low optical absorption through which a portion of the optical signal is configured to flow. The magnetic material is configured to receive an electrical signal that sets a magnetization state of the magnetic material. The magnetic material is further configured to modulate, based on the magnetization state, the portion of the optical signal flowing though the magnetic material.

Abstract: A device includes an excitation coil, a detector coil, and a processing circuit. The excitation coil is aligned about a volume. The excitation coil is configured to carry a first and second biasing current and generate a magnetic field in the volume. The detector coil is configured to generate an electrical signal based on a detected field within the volume. The detected field is based on the magnetic field. The processing circuit is configured to generate data based on the electrical signal.

Abstract: The disclosure describes multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 using chemical vapor deposition or liquid phase epitaxy.

Abstract: The disclosure describes hard magnetic materials including ??-Fe16N2 and techniques for forming hard magnetic materials including ??-Fe16N2 using chemical vapor deposition or liquid phase epitaxy.

Abstract: In some examples, a method comprising depositing a functional layer (e.g., a magnetic layer) over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing portions of the functional layer not masked by the hard mask layer, wherein the depositing of the functional layer, the depositing of the granular layer, removing the second material, and removing the portions of the functional layer are performed in a vacuum environment.

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.