Patents by Inventor Jianping Wen

Jianping Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of etching shaped features on a substrate
    Patent number: 6784110
    Abstract: In a method of etching a substrate, a substrate is provided in a process zone, the substrate having a pattern of features comprising dielectric covering semiconductor. In a first stage, an energized first etching gas is provided in the process zone, the energized first etching gas having a first selectivity of etching dielectric to semiconductor of at least about 1.8:1, wherein the dielectric is etched preferentially to the semiconductor to etch through the dielectric to at least partially expose the semiconductor. In a second stage, an energized second etching gas is provided in the process zone, the energized second etching gas having a second selectivity of etching dielectric to semiconductor of less than about 1:1.8, wherein the semiconductor is etched preferentially to the dielectric.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: August 31, 2004
    Inventors: Jianping Wen, Meihua Shen, Hung-Kwei Hu
  • METHOD OF ETCHING SHAPED FEATURES ON A SUBSTRATE
    Publication number: 20040063328
    Abstract: In a method of etching a substrate, a substrate is provided in a process zone, the substrate having a pattern of features comprising dielectric covering semiconductor. In a first stage, an energized first etching gas is provided in the process zone, the energized first etching gas having a first selectivity of etching dielectric to semiconductor of at least about 1.8:1, wherein the dielectric is etched preferentially to the semiconductor to etch through the dielectric to at least partially expose the semiconductor. In a second stage, an energized second etching gas is provided in the process zone, the energized second etching gas having a second selectivity of etching dielectric to semiconductor of less than about 1:1.8, wherein the semiconductor is etched preferentially to the dielectric.
    Type: Application
    Filed: October 1, 2002
    Publication date: April 1, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Jianping Wen, Meihua Shen, Hung-Kwei Hu