Abstract: A power unit includes: a DC/DC conversion circuit; a bypass circuit, including a mechanical switch, an impedance network, and a semiconductor switch, wherein the semiconductor switch and the impedance network are connected in series to form a series branch, the series branch, the mechanic switch and the DC/DC conversion circuit are connected in parallel between a positive end and a negative end at one side of the power unit; a detecting unit, configured to detect a working signal of the DC/DC conversion circuit and generate a detection signal according to the working signal; and a controller, configured to, when the fault occurs in the DC/DC conversion circuit, output a first control signal to a control end of the mechanical switch and output a second control signal to a control end of the semiconductor switch.

Abstract: A control method of a multilevel converter includes: classifying power modules that start working, need to update an output state or stop working to form m power module groups; and controlling power modules in a same one of the power module groups to start working, update the output state or stop working at the same time, and sequentially controlling the m power module groups to start working, or update the output state or stop working, according to a preset time interval. The number of power modules in each power module group is less than or equal to a preset value, causing a change value of an output level of the each power module group to be less than or equal to a preset voltage value.

Abstract: Disclosed is a surge control circuit, including: an absorption circuit including an absorption element and a bypass switch which are connected in series, a switch group connected in parallel to both ends of the absorption circuit and a first control circuit electrically connected to the switch group and bypass switch respectively. Normally, the first control circuit controls the switch group and the bypass switch to turn on simultaneously, makes the current flow through the switch group; when detecting the current is greater than or equal to the first preset current value, or the current increase rate is greater than or equal to the preset current rate of change, the first control circuit controls the switch group to turn off, makes the current flow through the absorption circuit; when detecting the current is less than the second preset current value, the first control circuit controls the bypass switch to turn off.

Abstract: The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.

Abstract: Disclosed is a circuit breaker apparatus, including a first switching assembly, a first controller, a second switching assembly and a second controller. The first switching assembly is connected in series between a positive pole of a power supply and a load. The first switching assembly includes multiple first switching units in series. The first controller is electrically connected to a first pre-set reference potential of the first switching assembly. The first controller is electromagnetically coupled with each first switching unit through a first transformer unit. The second switching assembly is connected in series between a negative pole of the power supply and the load. The second switching assembly includes multiple second switching units in series. The second controller is electrically connected to a second pre-set reference potential of the second switching assembly. The second controller is electromagnetically coupled with each second switching unit through a second transformer unit.

Abstract: The present disclosure provides a magnetic element and a method for manufacturing same. The method includes: forming a first metal wiring layer on a surface of at least one segment of a magnetic core; forming a first metal protection layer on the first metal wiring layer; removing a portion of the first metal protection layer with a direct writing technique to expose a portion of the first metal wiring layer; and etching the exposed first metal wiring layer in such a manner that the first metal wiring layer forms at least one first pattern to function as a winding, where at least one turn of the first pattern surrounds the magnetic core. The magnetic element and the method for manufacturing the magnetic element provided in the present disclosure can improve space utilization of the magnetic element.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

Abstract: A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.

Abstract: A modular power supply system is configured to include: a main controller, configured to output a mam control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; N auxiliary power supplies, in one-to-one correspondence with the N local controllers, wherein each of the auxiliary power supplies is configured to provide power to the corresponding local controller; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units is configured to include M power converters, each of the power converters is configured to operate according to the local control signal.

Abstract: The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.

Abstract: A modular power supply system includes: a main controller, configured to output a main control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, and the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units is configured to include M power converters, wherein each of the power converters includes a third end and a fourth end, the fourth end of each of the power converters is connected to the third end of an adjacent one of the power converters.

Abstract: A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.

Abstract: The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.

Abstract: A modular power supply system, includes: a main controller, configured to output a main control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units includes M power converters, and each of the power converters is configured to operate according to the local control signal output by a corresponding local controller, wherein each of the power units further includes: M sampling circuits, configured to sample positive DC bus voltages and negative DC bus voltages of the M power converters respectively.

Abstract: A ground fault detection method for a power converter is provided, including: measuring, by a voltage sensor, a first voltage and a second voltage respectively, and converting the first voltage and the second voltage into a first digital voltage signal and a second digital voltage signal; receiving, by a controller, the first digital voltage signal and the second digital voltage signal, extracting a corresponding feature quantity of the first voltage and a corresponding feature quantity of the second voltage according to the first digital voltage signal and the second digital voltage signal; and further determining a type of the ground fault of the power converter and locating a ground fault; and when the power converter has a ground fault, shutting down the power converter.

Abstract: A modular power supply system includes: a main controller, configured to output a main control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, and the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units is configured to include M power converters, each of the power converters is configured to operate according to the local control signal, wherein the same local control signal controls the power semiconductor switches at an identical position in at least two of the M power converters to be simultaneously turned on and off.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

Abstract: A power unit includes: a plurality of power converters, a first output terminal of one of two adjacent power converters among the plurality of power converters is connected successively to a second output terminal of the other one of the two adjacent power converters; a local controller configured to output a plurality of control signals; and a plurality of driving circuits configured to output driving signals according to the plurality of control signals, to drive the plurality of power semiconductor switches to be turned on and off, wherein the control signals corresponding to the power semiconductor switches in the same position of the plurality of power converters are the same, the power semiconductor switches in the same position of the plurality of power converters are simultaneously turned on and off.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

Abstract: The present disclosure discloses an active clamp circuit for a power semiconductor switch and a power converter using the same. The active clamp circuit includes: a discharging circuit, a first terminal of the discharging circuit being electrically connected to a collector of the power semiconductor switch; an unidirectional blocking circuit; a first voltage regulator diode connected in series with the unidirectional blocking circuit to form a series branch, a first terminal of the series branch being electrically connected to the collector of the power semiconductor switch; and a resistance-capacitance RC circuit, a first terminal of the RC circuit, a second terminal of the discharging circuit, and a second terminal of the serial circuit being electrically connected, a second terminal of the RC circuit being electrically coupled to a gate of the power semiconductor switch.