Abstract: A film growth apparatus (e.g., a nitridation apparatus) includes a processing chamber, a substrate holder disposed in the processing chamber, an energy source coupled to the processing chamber, and one or more gas inlets fluidically coupled to the processing chamber. The substrate holder is configured to support a substrate (e.g., a silicon substrate) maintained at a temperature less than about 400° C. The energy source is configured to treat an unreactive surface of the substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux. The one or more gas inlets are configured to convert (e.g., nitridate) the reactive surface using a gas (e.g., nitrogen-based gas) without generating plasma by converting the reactive surface to a film (e.g., a nitride layer) comprising a subsequent unreactive surface.

Abstract: A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: directing an energy flux to a localized region of an unreactive surface of a substrate to convert the localized region of the unreactive surface to a localized reactive region: and selectively nitridating the localized reactive region using a nitrogen-based gas to convert the localized reactive region to a nitride layer.

Abstract: The present invention provides a fluid measurement apparatus, including a pressure sensing element and a data processing element. The pressure sensing element is disposed in direct contact with a measured fluid, the pressure sensing element is a sealed element, and includes a first surface and a second surface that are disposed opposite to each other, the measured fluid directly impacts the first surface and the second surface, and pressure values generated when the first surface and the second surface are impacted by the measured fluid are detected. The data processing element is connected to the pressure sensing element, and a flow velocity and/or a flow rate of the measured fluid are/is calculated by using the pressure value detected by the pressure sensing element. The present invention resolves a problem that the fluid measurement apparatus cannot operate normally due to clogging of a pressure tap hole.

Abstract: A matching circuit for a plasma tool including an impedance matching network configured to be coupled between a power supply and a plasma chamber, the plasma chamber being configured to operate a plasma in a predetermined frequency range, the power supply being configured to provide power for the plasma chamber, the impedance matching network including a first pi-network and a second pi-network in series coupled between an input of the plasma chamber and an output of the power supply, and the impedance matching network being configured such that, during operation of the plasma chamber in the predetermined frequency range, an impedance of the impedance matching network and the plasma chamber equals an impedance of the power supply.

Abstract: A plasma system includes a plasma apparatus comprising a plasma chamber and a substrate support disposed in the plasma chamber. The system includes an electromagnetic (EM) circuit block coupled to a radio frequency (RF) electrode. The EM circuit block includes a broadband RF waveform function generator, the broadband RF waveform having EM power distributed over a range of frequencies, and a broadband impedance matching network having an input coupled to an output of the broadband RF waveform function generator and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies. The system includes a controller programmed to adjust an input parameter of the EM circuit block.

Abstract: A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

Abstract: A method of processing a substrate that includes: in a plasma processing chamber, performing an atomic layer deposition (ALD) process including cycles of deposition while maintaining a temperature of a substrate support between 25° C. and 450° C., one of the cycles including exposing the substrate loaded in a plasma processing chamber to a first precursor to modify a surface of the substrate with the first precursor, after exposing the substrate, purging the plasma processing chamber with an inert gas, exposing the modified surface of the substrate to a first plasma generated from the inert gas, and flowing a second precursor into the plasma processing chamber, after exposing to the first plasma, to form a conformal layer from the modified surface.

Abstract: According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes a conductive conical frustum having an open top base, an open bottom base, and a surface area coupling the open top base to the open bottom base. A conductive cylinder is positioned within the conductive conical frustum with a closed bottom base and an open top base. The open top base of the conductive cylinder is connected to sidewalls of the open top base of the conductive conical frustum. The conductive cylinder has a height shorter than the height of the conductive conical frustum. The apparatus is configured to provide a broadband RF transition from a matching network to a resonating structure of the plasma processing system for frequencies ranging between 13 megahertz (MHz) and 220 MHz.

Abstract: A spliceable and foldable filter element device is provided, which includes a quadrilateral filter element body made of a flexible material. The quadrilateral filter element body is a folding layer having vertical folds. A left frame body and a right frame body are respectively disposed on a left side and a right side of the quadrilateral filter element body, at least one clamping rod is arranged between the left frame body and the right frame body, the clamping rod comprises three or more clamping teeth, the clamping teeth correspond to the folding layer in position, and the clamping rod is clamped with the folding layer through the clamping teeth. The spliceable and foldable filter element device has the advantages of simple structure, low cost, foldability, flexible use, convenience, easy storage and transportation.

Abstract: A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

Abstract: This application provides a communication method, apparatus, and system. A network device sends a first downlink signal to a terminal device through a downlink slot of a first band, and simultaneously, the network device receives a first uplink signal from the terminal device through an uplink slot of a second band, where there is an association relationship between an uplink-downlink slot configuration of the first band and an uplink-downlink slot configuration of the second band.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate holder disposed in the chamber, and a radio frequency (RF) electrode disposed within the chamber, an RF power source configured to supply continuous wave RF power having frequency in the very high frequency range to the RF electrode, and a direct current (DC) power source configured to supply continuous wave DC power to the chamber through an RF choke. The DC power is supplied concurrently with the RF power. The RF power source is electrically coupled to the RF electrode through an impedance matching circuit and is separate from the DC power source. The RF electrode may be an upper electrode or a lower electrode, such as the substrate holder. The DC power may be supplied to an upper or lower electrode, or through a wall of the chamber.

Abstract: A method of performing a plasma process includes generating, at an output of a signal generator, a first RF signal at a first frequency. The signal generator is coupled to a plasma chamber through a matching circuit. Based on a feedback from the first RF signal, variable components of the matching circuit are moved to fixed positions. A second RF signal is generated at a second frequency at the output of the signal generator to ignite a plasma within the plasma chamber. In response to detecting the plasma, the signal generator switches to output a third RF signal at the first frequency to sustain the plasma, which is configured to process a substrate loaded into the plasma chamber while holding the matching circuit at the fixed positions.

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

Abstract: The present disclosure provides a system for perceiving an operating state of a large power transformer based on vibro-acoustic integration, including a perception layer, a network layer, and a diagnostic layer, where the perception layer is used for monitoring, in real time, a state parameter for a coupling vibration signal and an acoustic signal of each of a transformer core, a winding, a clamp and a housing, a state parameter of each of a vibration signal and an acoustic signal during a gear position change of an on-load tap changer (OLTC), and preliminarily diagnosing and analyzing monitored data. The system can monitor the operating state of the OLTC online for a long time, flexibly configure the sensor channel and the sensor type according to different application requirements, automatically acquire and identify the gear position change, and correctly identify and process a gear position corresponding to the monitoring signal.

Abstract: A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average ion energy. The method further includes adjusting the first average ion energy of the carbon-based ions to a second average ion energy by supplying continuous wave direct current power to the plasma processing chamber concurrently with the continuous wave radio frequency power and forming a carbon hard mask at a substrate within the plasma processing chamber by delivering the carbon-based ions having the second average ion energy to the substrate.

Abstract: Embodiments of this application disclose a radio frequency unit, an antenna, and a signal processing method. The method includes: receiving an uplink signal in a downlink slot, where the uplink signal includes signals of N frequency bands; filtering and amplifying the signals of the N frequency bands; converting the uplink signal into a digital intermediate frequency signal; and then processing the digital intermediate frequency signal.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract: A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: directing an energy flux to a localized region of an unreactive surface of a substrate to convert the localized region of the unreactive surface to a localized reactive region: and selectively nitridating the localized reactive region using a nitrogen-based gas to convert the localized reactive region to a nitride layer.

Abstract: A method of plasma processing that includes: flowing a first gas and a second gas into a plasma processing chamber including a substrate, the second gas including a film precursor; at a first time instance, while maintaining the flow of the first gas, shutting off the flow of the second gas into the plasma processing chamber; and at a second time instance after the first time instance, powering an electrode of the plasma processing chamber to generate a plasma within the plasma processing chamber, the surface of the substrate being exposed to the generated plasma to form a film over the substrate.