Patents by Inventor Jiansen Zheng
Jiansen Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888094Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.Type: GrantFiled: August 23, 2021Date of Patent: January 30, 2024Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Anhe He, Su-hui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chen-ke Hsu
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Publication number: 20240030593Abstract: A vehicle sunroof (100) and a vehicle (1000) are provided. The vehicle sunroof (100) includes a sunroof glass sheet (10) and an antenna assembly (20). The sunroof glass sheet (10) includes a light-transmitting portion (11) and an opaque masking portion (12) surrounding the light-transmitting portion (11). The light-transmitting portion (11) is used for allowing light to pass through. The opaque masking portion (12) is connected to a vehicle body and opposite to a ceiling (200), and the antenna assembly (20) is arranged between the opaque masking portion (12) and the ceiling (200). By arranging the antenna assembly (20) between the opaque masking portion (12) of the sunroof glass sheet (10) and the ceiling (200). The antenna assembly (20) will neither affect the exterior design of the vehicle nor increase the wind resistance of the vehicle.Type: ApplicationFiled: September 29, 2023Publication date: January 25, 2024Applicant: FUYAO GLASS INDUSTRY GROUP CO., LTD.Inventors: Chengwei PAN, Jianjian LIN, Tao BAN, Xiaqun YU, Jiansen ZHENG
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Patent number: 11631601Abstract: A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.Type: GrantFiled: December 31, 2020Date of Patent: April 18, 2023Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Chen-ke Hsu, Jiansen Zheng, Xiaojuan Shao, Kechuang Lin
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Patent number: 11618673Abstract: A transfer system for transferring multiple microelements to a receiving substrate includes a main pick-up device, a testing device, and first and second carrier plates. The testing device includes a testing platform, a testing circuit, and multiple testing electrodes electrically connected to the testing circuit. The main pick-up device is operable to releasably pick up the microelements from the first carrier plate and position the microelements on the testing electrodes. The testing device is operable to test the microelements to distinguish unqualified ones of the microelements from qualified ones. The main pick-up device is operable to release the qualified ones of the microelements to the receiving substrate.Type: GrantFiled: September 17, 2021Date of Patent: April 4, 2023Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Chenke Hsu, Jiali Zhuo, Xiaojuan Shao, Jiansen Zheng, Xinghua Liang
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Publication number: 20230088776Abstract: A light emitting diode includes: a light emitting layer arranged on at least part of a first semiconductor layer, and a second semiconductor layer; a local defect region over a portion of the second semiconductor layer and extending downward to the first semiconductor layer; a metal layer over a portion of the second semiconductor layer; an insulating layer covering the metal layer, the second and first semiconductor layers in the local defect region, with opening structures over the local defect region and the metal layer, respectively; and an electrode structure over the insulating layer and having a first layer and a second layer, and including a first-type electrode region and a second-type electrode region; wherein an upper surface and a lower surface of the first layer are not flat, and a lower surface of the second layer are both flat.Type: ApplicationFiled: June 12, 2022Publication date: March 23, 2023Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe HE, Suhui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chenke HSU
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Patent number: 11557580Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.Type: GrantFiled: September 10, 2021Date of Patent: January 17, 2023Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Zhibai Zhong, Chia-En Lee, Jinjian Zheng, Jiansen Zheng, Chen-Ke Hsu, Junyong Kang
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Patent number: 11393967Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.Type: GrantFiled: December 30, 2020Date of Patent: July 19, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe He, Suhui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chenke Hsu
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Publication number: 20220002146Abstract: A transfer system for transferring multiple microelements to a receiving substrate includes a main pick-up device, a testing device, and first and second carrier plates. The testing device includes a testing platform, a testing circuit, and multiple testing electrodes electrically connected to the testing circuit. The main pick-up device is operable to releasably pick up the microelements from the first carrier plate and position the microelements on the testing electrodes. The testing device is operable to test the microelements to distinguish unqualified ones of the microelements from qualified ones. The main pick-up device is operable to release the qualified ones of the microelements to the receiving substrate.Type: ApplicationFiled: September 17, 2021Publication date: January 6, 2022Inventors: Chenke HSU, Jiali ZHUO, Xiaojuan SHAO, Jiansen ZHENG, Xinghua LIANG
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Publication number: 20210407978Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.Type: ApplicationFiled: September 10, 2021Publication date: December 30, 2021Inventors: Zhibai ZHONG, Chia-En LEE, Jinjian ZHENG, Jiansen ZHENG, Chen-Ke HSU, Junyong KANG
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Publication number: 20210384383Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe HE, Su-hui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chen-ke HSU
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Patent number: 11142452Abstract: A transfer system for transferring multiple microelements to a receiving substrate includes a main pick-up device, a testing device, and first and second carrier plates. The testing device includes a testing platform, a testing circuit, and multiple testing electrodes electrically connected to the testing circuit. The main pick-up device is operable to releasably pick up the microelements from the first carrier plate and position the microelements on the testing electrodes. The testing device is operable to test the microelements to distinguish unqualified ones of the microelements from qualified ones. The main pick-up device is operable to release the qualified ones of the microelements to the receiving substrate.Type: GrantFiled: May 30, 2019Date of Patent: October 12, 2021Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Chenke Hsu, Jiali Zhuo, Xiaojuan Shao, Jiansen Zheng, Xinghua Liang
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Patent number: 11127886Abstract: A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.Type: GrantFiled: August 13, 2016Date of Patent: September 21, 2021Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe He, Su-hui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chen-ke Hsu
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Patent number: 11127723Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.Type: GrantFiled: May 15, 2020Date of Patent: September 21, 2021Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Zhibai Zhong, Chia-En Lee, Jinjian Zheng, Jiansen Zheng, Chen-Ke Hsu, Junyong Kang
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Publication number: 20210125847Abstract: A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.Type: ApplicationFiled: December 31, 2020Publication date: April 29, 2021Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Chen-ke HSU, Jiansen ZHENG, Xiaojuan SHAO, Kechuang LIN
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Publication number: 20210126176Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.Type: ApplicationFiled: December 30, 2020Publication date: April 29, 2021Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe HE, Suhui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chenke HSU
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Patent number: 10916688Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.Type: GrantFiled: June 12, 2020Date of Patent: February 9, 2021Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe He, Suhui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chenke Hsu
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Patent number: 10916458Abstract: A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.Type: GrantFiled: December 31, 2017Date of Patent: February 9, 2021Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Chen-Ke Hsu, Jiansen Zheng, Xiaojuan Shao, Kechuang Lin
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Publication number: 20200313059Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.Type: ApplicationFiled: June 12, 2020Publication date: October 1, 2020Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe HE, Suhui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chenke HSU
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Publication number: 20200273848Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.Type: ApplicationFiled: May 15, 2020Publication date: August 27, 2020Inventors: ZHIBAI ZHONG, CHIA-EN LEE, JINJIAN ZHENG, JIANSEN ZHENG, CHEN-KE HSU, JUNYONG KANG
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Patent number: 10707395Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.Type: GrantFiled: May 10, 2019Date of Patent: July 7, 2020Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Anhe He, Suhui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chenke Hsu