Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

Abstract: A device configured to transfer a micro element includes: a pick-up head array configured to selectively pick up or release the micro element, and including a plurality of pick-up heads; and a test circuit having a plurality of sub-test circuits, each sub-test circuit corresponding to one pick-up head among the plurality of pick-up heads, and having at least two test electrodes for simultaneous testing of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: A device configured to transfer a micro element includes: a pick-up head array configured to selectively pick up or release the micro element, and including a plurality of pick-up heads; and a test circuit having a plurality of sub-test circuits, each sub-test circuit corresponding to one pick-up head among the plurality of pick-up heads, and having at least two test electrodes for simultaneous testing of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: An AlGaInP light-emitting diode includes from bottom up a substrate, a distributed Bragg reflector (DBR) reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.

Abstract: A transfer system for transferring multiple microelements to a receiving substrate includes a main pick-up device, a testing device, and first and second carrier plates. The testing device includes a testing platform, a testing circuit, and multiple testing electrodes electrically connected to the testing circuit. The main pick-up device is operable to releasably pick up the microelements from the first carrier plate and position the microelements on the testing electrodes. The testing device is operable to test the microelements to distinguish unqualified ones of the microelements from qualified ones. The main pick-up device is operable to release the qualified ones of the microelements to the receiving substrate.

Abstract: A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.

Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.

Abstract: A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.

Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.

Abstract: A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: An AlGaInP light-emitting diode includes from bottom up a substrate, a DBR reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.

Abstract: A semi-polar LED epitaxial structure includes, from bottom to up: a sapphire substrate; a semiconductor bottom layer structure; and a semiconductor functional layer; wherein: a surface of the semiconductor bottom structure has V pits; and a side of the V pits is a semi-polar surface, corresponding to (1-101) family of crystal planes. A fabrication method includes: providing a sapphire substrate; growing a semiconductor bottom structure over the sapphire substrate to form V pits on a surface, wherein a side of the V pits is a semi-polar surface, corresponding to (1-101) family of crystal planes; and growing a semiconductor functional layer over the semi-polar surface of the semiconductor bottom structure.

Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

Abstract: A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.

Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.

Abstract: A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serves as current blocking layer; a current spreading layer covering the surface of the light transmission layer and the surface of an epitaxial layer of a non-mask light transmission layer. As the refractive index of the light transmission layer is between those of the epitaxial layer and the hole, indicating a difference of refractive index between the light transmission layer and the epitaxial layer, the probability of scattering generated when light from a luminescent layer emits upwards can be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.

Abstract: A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.