Abstract: An LED array structure and a display device are provided. The LED array structure includes a first substrate, LEDs formed on the first substrate, and an elastic portion formed from an elastic material filled between the LEDs and the first substrate, and/or between the adjacent LEDs. In the LED array structure and the display device according to the embodiments of the present application, the elastic portion is filled between the LEDs and the first substrate. Therefore, the elastic portion is used as a stress release layer during bending process of a flexible screen, so as to prevent damage to a brittle LED chip and improve bending resistance of the LED array structure.

Abstract: Display panels and display devices, in order to provide a new full screen solution that can realize fingerprint recognition. The display panel includes a substrate, a display film layer located on a surface of the substrate and a touch film layer located above the display film layer. The display panel further includes a fingerprint recognition film layer including a plurality of image sensing elements arranged in an array, and an orthographic projection of the image sensing element on the substrate is not overlapped with an orthographic projection of the light-emitting sub-pixels in the display film layer on the substrate.

Abstract: The present disclosure discloses a stretchable display panel and a method of manufacturing the same. The stretchable display panel includes an elastic base layer and a number of array-distributed display units embedded in the elastic base layer. At least one of the display units include a pixel unit and a rigid protection body, and the rigid protection body includes at least a rigid sidewall disposed on at least one side of the pixel units.

Abstract: The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyeleotrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.

Abstract: The disclosure relates to the field of light-emitting device technology, and in particular to a quantum dot light-emitting diode device and a manufacturing method, an apparatus thereof. The device includes: a quantum dot light-emitting layer, a first transport layer located over the quantum dot light-emitting layer, a first barrier layer located between the quantum dot light-emitting layer and the first transport layer, the first barrier layer containing a polymer electrolyte, which is configured to block at least a portion of the nanoparticles in the first transport layer from leaking into the quantum dot light-emitting layer.

Abstract: An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer. A first contact electrode extends through the active layer and the second semiconductor layer and is electrically connected to the first semiconductor layer; a second contact electrode is located on the second semiconductor layer and is electrically connected to the second semiconductor layer; a first extension electrode is located on the first contact electrode and is electrically connected to the first contact electrode, the first extension electrode comprises a plurality of concave spots for soldering; and a second extension electrode is located on the second contact electrode, electrically connected to the second contact electrode and isolated from the first extension electrode, and the second extension electrode includes a plurality of concave spots for soldering.

Abstract: A method for manufacturing a micro-LED display screen includes: forming an N-type GaN layer, a quantum-well light-emitting layer, and a P-type GaN layer on a sapphire substrate sequentially; etching the P-type GaN layer, the quantum-well light-emitting layer, and the N-type GaN layer from top to bottom, to form a first trench; forming an ITO layer on the surface of the P-type GaN layer, and etching the ITO layer to form a second trench; generating an N-type contact electrode in the first trench; generating a reflective electrode having a longitudinal cross-section in a shape with a wide upper side and a narrow lower side, respectively, on an upper surface of the N-type contact electrode and in the second trench; depositing an insulating layer on a surface of the micro-LED chip, and etching the insulating layer to expose the reflective electrodes; and soldering a driving circuit substrate to the reflective electrode.

Abstract: The present application provides a flexible display screen including a number of functional film layers stacked in sequence. The functional film layer includes a number of module materials as units constituting the functional film layer, and a gap or a groove is disposed between two adjacent module materials. The groove or the gap can reduce contact area between a functional film layer where the module material is located and another functional film layer disposed adjacent to the functional film layer.