Patents by Inventor Jianwei PENG

Jianwei PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250029869
    Abstract: An isolation structure for a substrate is disclosed. The isolation structure includes a lower portion having a first liner, and an upper portion having a second liner vertically over the first liner. A first dielectric material is surrounded by the second liner from above and by the first liner from below and laterally. The second liner may include a second dielectric material in at least part thereof. The second liner prevents exposure of end surfaces of a semiconductor layer of the substrate during subsequent processing, which prevents damage such as thinning, agglomeration and/or oxidation that can negatively affect performance of a transistor formed using the semiconductor layer. The second liner also reduces an overall step height of the isolation structure.
    Type: Application
    Filed: July 18, 2023
    Publication date: January 23, 2025
    Inventors: Jianwei Peng, Hong Yu
  • Publication number: 20240313054
    Abstract: An apparatus has a first gate structure of a core device on a substrate, a first L-shaped spacer covering a sidewall of the first gate and part of the substrate adjacent to the first gate, a first raised source/drain (S/D) structure on the substrate and spaced apart from the first gate by the first L-shaped spacer, a second gate of an I/O device on the substrate, a second L-shaped spacer covering a sidewall of the second gate and part of the substrate adjacent to the second gate, and a second raised S/D structure spaced apart from the second gate by the second L-shaped spacer. The first and second L-shaped spacers have the same spacer width, and a distance between the first gate structure and a sidewall of the first S/D structure is less than a distance between the second gate structure and a sidewall of the second S/D structure.
    Type: Application
    Filed: March 14, 2023
    Publication date: September 19, 2024
    Inventors: Jianwei PENG, Hong Yu
  • Patent number: 12020937
    Abstract: Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: June 25, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Jianwei Peng, Hong Yu, Man Gu, Eric S. Kozarsky
  • Publication number: 20240194535
    Abstract: Structures that include field-effect transistors and methods of forming such structures. The structure comprises a substrate, a dielectric layer on the substrate, a first field-effect transistor including a first semiconductor layer over the dielectric layer and a first gate electrode, and a second field-effect transistor including a second semiconductor layer over the dielectric layer and a second gate electrode adjacent to the first gate electrode. The second semiconductor layer is connected to the first semiconductor layer, and the first and second semiconductor layers are positioned between the first gate electrode and the second gate electrode.
    Type: Application
    Filed: December 13, 2022
    Publication date: June 13, 2024
    Inventors: Venkatesh P. Gopinath, Navneet Jain, Hongru Ren, Alexander Derrickson, Jianwei Peng, Bipul C. Paul
  • Publication number: 20240116829
    Abstract: Disclosed in the present application are a concrete protection material, and a preparation method and a construction method therefor. The concrete protection material consists of 50%-90% of a component A and 10%-50% of a component B in percentage by weight, where the component A is prepared from 30%-65% of organic silicon, 2%-5% of nano-silicon dioxide and the balance of an organic solvent in percentage by weight; and the component B is prepared from 20%-50% of an organic base and the balance of water in percentage by weight. The present application not only can form nano-particles having a strengthening effect in capillary channels of a concrete surface layer, but also can achieve a technical effect of superhydrophobicity on the concrete surface layer.
    Type: Application
    Filed: November 21, 2022
    Publication date: April 11, 2024
    Applicants: NATIONAL ENGINEERING RESEARCH CENTER OF HIGH-SPEED RAILWAY CONSTRUCTION TECHNOLOGY, CHINA RAILWAY NO.4 ENGINEERING GROUP CO., LTD, ANHUI ENGINEERING MATERIAL TECHNOLOGY CO, LTD OF CTCE GROUP
    Inventors: Dongdong FAN, Hai HUANG, Jianfeng WEN, Jianwei PENG, Zhiyong WANG, Yitao CHEN, Chenhao WU, Jianan YAO, Jie TANG, Juan CHEN, Chunhong LIN, Xianzhu HU, Zhiwu YU
  • Patent number: 11935928
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with self-aligned asymmetric spacer and methods of manufacture. The structure includes: a base formed on a semiconductor substrate; an asymmetrical spacer surrounding the base; an emitter on a first side of the base and separated from the base by the asymmetrical spacer; and a collector on a second side of the base and separated from the base by the asymmetrical spacer.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: March 19, 2024
    Assignee: GLOBALFOUNDRIES U.S. Inc.
    Inventors: Hong Yu, Jianwei Peng, Vibhor Jain
  • Publication number: 20240063225
    Abstract: A substrate is provided. The substrate includes a base, a semiconductor layer over the base, and an insulator layer between the base and the semiconductor layer. The semiconductor layer has a first semiconductor layer portion having a first thickness, a second semiconductor layer portion having a second thickness, and a third semiconductor layer portion having a third thickness, and the first thickness, the second thickness, and the third thickness are different from each other.
    Type: Application
    Filed: August 17, 2022
    Publication date: February 22, 2024
    Inventors: DAVID PRITCHARD, HONGRU REN, SHAFIULLAH SYED, HONG YU, MAN GU, JIANWEI PENG
  • Publication number: 20230382800
    Abstract: The invention provides a modified dolomite powder, a preparation method thereof, and a concrete. The modified dolomite powder is prepared from 98% to 99% of a dolomite powder, 0.2% to 0.5% of a chaotropic agent, 0.6% to 1.0% of a dihydrogen phosphate, and 0.2% to 0.5% of a capillary filler according to the mass percentage. The chaotropic agent is one or more of sodium sulfate, potassium sulfate, and ammonium sulfate. By promoting the dissolution of the surface of the dolomite powder, participating in the hydration reaction, and filling capillary pores, the triple modification solves the problems of bleeding, strength, and durability of the dolomite powder concrete in the related art. The obtained modified dolomite powder has good solubility and high chemical activity, and the prepared concrete has high strength and compactness, low porosity, and good durability.
    Type: Application
    Filed: May 16, 2023
    Publication date: November 30, 2023
    Applicants: ANHUI ZHONGTIE ENGINEERING MATERIAL TECHNOLOGY CO., LTD., CHINA TIESIJU CIVIL ENGINEERING GROUP CO., LTD.
    Inventors: Jianwei Peng, Dongdong Fan, Hai Huang, Jie Tang, Chenghao Wu, Jianfeng Wen, Yucheng Tang, Chunsong Yu, Yitao Chen, Jianan Yao
  • Patent number: 11810951
    Abstract: Disclosed are a semiconductor structure and method of forming the structure. The structure includes a field effect transistor (FET) with a channel region between source/drain regions that extend through a semiconductor layer and into an insulator layer, that include a first portion in the insulator layer, and a second portion on the first portion in the semiconductor layer and, optionally, extending above the semiconductor layer. The first portion is relatively wide, includes a shallow section below the second portion, and a deep section adjacent to the channel region and overlayed by the semiconductor layer. The uniquely shaped first portion boosts saturation current to be boosted to allow the height of the second portion to be reduced to minimize overlap capacitance. Optionally, each source/drain region includes multiple semiconductor materials including a stress-inducing semiconductor material grown laterally from the semiconductor layer to improve charge carrier mobility in the channel region.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: November 7, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Jianwei Peng, Hong Yu, Viorel Ontalus
  • Patent number: 11798948
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to semiconductor devices with a shared common backside well and methods of manufacture. The structure includes: adjacent gate structures over a semiconductor substrate; a common well in the semiconductor substrate under the adjacent gate structures; a deep trench isolation structure extending through the common well between the adjacent gate structures; and a shared diffusion region between the adjacent gate structures.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: October 24, 2023
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Kaustubh Shanbhag, Eric S. Kozarsky, George R. Mulfinger, Jianwei Peng
  • Publication number: 20230307238
    Abstract: Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 28, 2023
    Applicant: GlobalFoundries U.S. Inc.
    Inventors: Jianwei Peng, Hong Yu, Man Gu, Eric S. Kozarsky
  • Publication number: 20230268401
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with self-aligned asymmetric spacer and methods of manufacture. The structure includes: a base formed on a semiconductor substrate; an asymmetrical spacer surrounding the base; an emitter on a first side of the base and separated from the base by the asymmetrical spacer; and a collector on a second side of the base and separated from the base by the asymmetrical spacer.
    Type: Application
    Filed: May 18, 2022
    Publication date: August 24, 2023
    Inventors: Hong Yu, Jianwei Peng, Vibhor Jain
  • Publication number: 20230261088
    Abstract: Structures for a transistor and methods of forming a structure for a transistor. The structure includes a first dielectric spacer, a second dielectric spacer, and a gate laterally between the first dielectric spacer and the second dielectric spacer. The gate includes a first silicide layer extending from the first dielectric spacer to the second dielectric spacer. The structure further includes a second silicide layer within the first silicide layer, and a contact that is aligned to the second silicide layer.
    Type: Application
    Filed: February 11, 2022
    Publication date: August 17, 2023
    Inventors: Man Gu, Hong Yu, Jianwei Peng, Haiting Wang
  • Publication number: 20230197783
    Abstract: Disclosed are a semiconductor structure and method of forming the structure. The structure includes a field effect transistor (FET) with a channel region between source/drain regions that extend through a semiconductor layer and into an insulator layer, that include a first portion in the insulator layer, and a second portion on the first portion in the semiconductor layer and, optionally, extending above the semiconductor layer. The first portion is relatively wide, includes a shallow section below the second portion, and a deep section adjacent to the channel region and overlayed by the semiconductor layer. The uniquely shaped first portion boosts saturation current to be boosted to allow the height of the second portion to be reduced to minimize overlap capacitance. Optionally, each source/drain region includes multiple semiconductor materials including a stress-inducing semiconductor material grown laterally from the semiconductor layer to improve charge carrier mobility in the channel region.
    Type: Application
    Filed: December 16, 2021
    Publication date: June 22, 2023
    Applicant: GlobalFoundries U.S. Inc.
    Inventors: Jianwei Peng, Hong Yu, Viorel Ontalus
  • Publication number: 20230112377
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to semiconductor devices with a shared common backside well and methods of manufacture. The structure includes: adjacent gate structures over a semiconductor substrate; a common well in the semiconductor substrate under the adjacent gate structures; a deep trench isolation structure extending through the common well between the adjacent gate structures; and a shared diffusion region between the adjacent gate structures.
    Type: Application
    Filed: October 7, 2021
    Publication date: April 13, 2023
    Inventors: Kaustubh Shanbhag, Eric S. Kozarsky, George R. Mulfinger, Jianwei Peng
  • Patent number: 11554993
    Abstract: A highly thixotropic 3D printing concrete and a manufacturing method therefor are provided. The weight percentage of each component calculated per cube of concrete is: 35-40% of cement, 0.1-0.4% of polycarboxylate superplasticizer, 0.1-0.4% of polypropylene fiber, 1.0-3.0% of special thixotropic agent for 3D printing concrete, and 12.5-14.5% of water, and the remainder is sand.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: January 17, 2023
    Assignees: CHINA TIESIJU CIVIL ENGINEERING GROUP, ANHUI ZHONGTIE ENGINEERING MATERIAL TECHNOLOGY CO., LTD., CENTRAL SOUTH UNIVERSITY
    Inventors: Jun Wu, Jianwei Peng, Hai Huang, Juan Chen, Qiang Yuan, Jie Tang, Jianan Yao, Zhiyong Wang, Jian Yu, Yang Liu
  • Publication number: 20210355040
    Abstract: A highly thixotropic 3D printing concrete and a manufacturing method therefor are provided. The weight percentage of each component calculated per cube of concrete is: 35-40% of cement, 0.1-0.4% of polycarboxylate superplasticizer, 0.1-0.4% of polypropylene fiber, 1.0-3.0% of special thixotropic agent for 3D printing concrete, and 12.5-14.5% of water, and the remainder is sand.
    Type: Application
    Filed: June 4, 2019
    Publication date: November 18, 2021
    Applicants: CHINA TIESIJU CIVIL ENGINEERING GROUP, ANHUI ZHONGTIE ENGINEERING MATERIAL TECHNOLOGY CO., LTD, CENTRAL SOUTH UNIVERSITY
    Inventors: Jun WU, Jianwei PENG, Hai HUANG, Juan CHEN, Qiang YUAN, Jie TANG, Jianan YAO, Zhiyong WANG, Jian YU, Yang LIU
  • Patent number: 11111054
    Abstract: An equal-fork pallet comprising a pallet body is provided. The pallet body is provided with a stand structure and a reinforcing structure, the reinforcing structure is a reinforcing rib embodied by a groove structure pressed on the surface of the pallet body, and the reinforcing rib comprises a connection type reinforcing rib and a semi-partition type reinforcing rib, the stand structure comprises a corner stand, an edge stand and a center stand, and neither end of the partition type reinforcing rib is connected to the stand. The equal-fork pallet has a reasonable structural design and strong pressure bearing capacity, with targeted layout and design of the reinforcing rib centralized position and stress concentration position such as stand. The pallet can overcome the problems of low local compressive strength and proneness to produce stress fracture and local cracking.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: September 7, 2021
    Assignee: HANGZHOU PENNO PACKTECH CO., LTD.
    Inventors: Qiaoli Wu, Jianwei Peng, Huizhen Jiang
  • Patent number: 11101364
    Abstract: Structures for a field-effect transistor and methods of forming a field-effect transistor. A gate structure of the field-effect transistor is arranged over an active region comprised of a semiconductor material. A first sidewall spacer is arranged adjacent to the gate structure. A second sidewall spacer includes a section arranged between the first sidewall spacer and the active region. The first sidewall spacer is composed of a low-k dielectric material.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: August 24, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: George R. Mulfinger, Hong Yu, Man Gu, Jianwei Peng, Michael Aquilino
  • Patent number: 10910471
    Abstract: A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3× fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3× fin pitch, a TS formed on the RSD, and an ILD formed over the TS.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: February 2, 2021
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Jianwei Peng, Sang Woo Lim, Matthew Wahlquist Stoker, Huang Liu, Jinping Liu