Abstract: A method for regenerating semi-regenerated reforming catalyst comprises adjusting the reaction temperature to 250-480° C.; introducing sulfur-containing naphtha into the reforming reactor, so that the sulfur content in the catalyst is 0.32-0.8 mass %; then stopping introducing the raw materials into the reforming reactor; subjecting the catalyst to coke-burning, oxychlorination and reduction. Another method for regenerating semi-regenerated reforming catalyst comprises coke-burning the spent catalyst; introducing sulfate ions thereinto; then performing oxychlorination and reduction. There is still another method for regenerating a platinum-rhenium reforming catalyst, comprising coke-burning the spent catalyst; introducing sulfur and chlorine by impregnation; then drying, calcinating and reducing. The catalysts regenerated by said methods can be used without presulfurization and have excellent regeneration performance.

Abstract: Embodiments of the present invention are directed to facilitating tag assignment to data objects as data objects are added to a tag-associated data-object storage system by users of the tag-associated data-object storage system and to facilitate subsequent display, access, and further characterization of data objects that already reside in the a tag-associated data-object storage system. Methods and systems of the present invention provide for automated tag suggestion to users in order to both increase usability of the interface provided to the tag-associated data-object storage systems as well as decrease the likelihood of unnecessary and unproductive tag proliferation within the tag-associated data-object storage system.

Abstract: Provided are a method for suppressing a leakage current of a tunnel field-effect transistor (TFET), a corresponding device, and a manufacturing method, related to the field of field-effect transistor logic devices and circuits in CMOS ultra large-scale integration (ULSI). By inserting an insulating layer (7) between a source region (10) and a transistor body below a tunneling junction, and by inserting no insulating layer at a tunneling junction between a source region and a channel, a source/drain direct tunneling leakage current in a small-sized TFET device is effectively suppressed, and a threshold slope is effectively improved. The manufacturing method for the corresponding device is completely compatible with an existing CMOS process.

Abstract: The present invention discloses a junction-modulated tunneling field effect transistor and a fabrication method thereof, belonging to a field of field effect transistor logic device and the circuit in connection with CMOS ultra large scale integrated circuit (ULSI). The PN junction provided by a highly-doped source region surrounding three sides of the vertical channel region of the tunneling field effect transistor can deplete effectively the channel region, so that the energy band of the surface channel under the gate is lifted, therefore the device may obtain a steeper energy band and a narrower tunneling barrier width than the conventional TFET when the band-to-band tunneling occurs, equivalently achieving the effect of a steep doping concentration gradient at the source tunneling junction, and thereby the sub-threshold characteristics are significantly improved while the turn-on current of the device is improved relative to the conventional TFET.

Abstract: A naphtha reforming catalyst, comprising an alumina support and following components with the content calculated on the basis of the support: VIII group metal 0.1-2.0% by weight, VIM group metal 0.1-3.0% by weight, sulfate ion 0.45-3.0% by weight, and halogen 0.5-3.0% by weight. The catalyst is used in a naphtha reforming reaction without presulfurization and has a high aromatization activity and a selectivity.

Abstract: The present invention discloses a tunneling field effect transistor having a three-side source and a fabrication method thereof, referring to field effect transistor logic devices and circuits in CMOS ultra large scale integrated circuits (ULSI). By means of the strong depletion effect of the three-side source, the transistor can equivalently achieve a steep doping concentration gradient for the source junction, significantly optimizing the sub-threshold slope of the TFET. Meanwhile, the turn-on current of the transistor is boosted. Furthermore, due to a region uncovered by the gate between the gate and the drain, the bipolar conduction effect of the transistor is effectively inhibited, and on the other hand, in the small-size transistor a parasitic tunneling current at the corner of the source junction is inhibited. The fabrication method is simple and can be accurately controlled.

Abstract: The present invention discloses a strip-shaped gate tunneling field effect transistor using composite mechanism and a fabrication method thereof, which belongs to a field of field effect transistor logic devices and circuits in the CMOS ultra large scale integrated circuit (ULSI). According to the tunneling field effect transistor, the energy band of the channel underneath the gate is elevated by means of a change of the gate morphology and the PN junction depletion effect occurred at both sides of the strip-shaped gate, so that the sub-threshold characteristics of the transistor are improved. Meanwhile, the on-state current of the transistor is effectively increased by means of the composite mechanism introduced by the two parts of the doped source region.

Abstract: The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof. The short-gate tunneling field effect transistor has a vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears a Gaussian distribution along a vertical direction and the doping concentration in the channel near the drain region is higher while the doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region.

Abstract: Embodiments of the present invention are directed to facilitating tag assignment to data objects as data objects are added to a tag-associated data-object storage system by users of the tag-associated data-object storage system and to facilitate subsequent display, access, and further characterization of data objects that already reside in the a tag-associated data-object storage system. Methods and systems of the present invention provide for automated tag suggestion to users in order to both increase usability of the interface provided to the tag-associated data-object storage systems as well as decrease the likelihood of unnecessary and unproductive tag proliferation within the tag-associated data-object storage system.

Abstract: Embodiments of the present invention are directed to facilitating tag assignment to data objects as data objects are added to a tag-associated data-object storage system by users of the tag-associated data-object storage system and to facilitate subsequent display, access, and further characterization of data objects that already reside in the a tag-associated data-object storage system. Methods and systems of the present invention provide for automated tag suggestion to users in order to both increase usability of the interface provided to the tag-associated data-object storage systems as well as decrease the likelihood of unnecessary and unproductive tag proliferation within the tag-associated data-object storage system.

Abstract: Embodiments of the present invention are directed to facilitating tag assignment to data objects as data objects are added to a tag-associated data-object storage system by users of the tag-associated data-object storage system and to facilitate subsequent display, access, and further characterization of data objects that already reside in the a tag-associated data-object storage system. Methods and systems of the present invention provide for automated tag suggestion to users in order to both increase usability of the interface provided to the tag-associated data-object storage systems as well as decrease the likelihood of unnecessary and unproductive tag proliferation within the tag-associated data-object storage system.

Abstract: A method, apparatus, and a user interface for managing and prioritizing items in a list are provided. Each item in the list is associated with and displayed adjacent to a user interface control for flagging the associated list item. When selected, the user interface control is operative to flag the corresponding list item. Moreover, the user interface control is further operative to change its visual state to indicate that the corresponding list item is flagged. List items flagged by other users appear differently. When again selected, the user interface control is further operative to remove the flagged state for the corresponding item and to set the state of the item as completed.