Patents by Inventor Jie Bai

Jie Bai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250206921
    Abstract: Aspects of the disclosure relate to compositions for forming films and the use of the films in large die applications. In certain aspects, the disclosure relates to compositions comprising two or more resins, optionally, one or more inorganic fillers, and one or more core shell additives, together with a curative package, to films prepared from the disclosed compositions, and to cured films obtained after cure of the disclosed compositions. In certain aspects, cured films obtained after cure of the disclosed compositions have particular physical properties and/or combinations of physical properties.
    Type: Application
    Filed: March 13, 2025
    Publication date: June 26, 2025
    Inventors: Jie Bai, Phuong U Do, Qizhuo Zhuo, Daniel M. Kwak, Hwang Kyu Yun
  • Patent number: 12336978
    Abstract: Provided herein is a pharmaceutical composition for treating resistant hypertension, which includes amlodipine, chlorthalidone, and amiloride. This disclosure also provides an application of the pharmaceutical composition in the treatment of low renin/low aldosterone resistant hypertension and targeting organ damage in the subject suffering from resistant hypertension.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: June 24, 2025
    Assignees: SHENZHEN AUSA PHARMED CO., LTD., SHENZHEN AUSA PHARMACEUTICAL CO., LTD.
    Inventors: Guangliang Chen, Duo Yu, Jie Bai, Minqing Tian, Ping Chen, Xiping Xu
  • Publication number: 20250178907
    Abstract: Metal-loaded nanocarbon spheres, and a preparation method and use thereof are provided. A nitrogen-containing carbon source, dicyandiamide, and polytetrafluoroethylene are mixed to obtain a mixed powder. The mixed powder is added to formamide and water, and calcium sulfate and/or sodium dodecyl sulfate are then added thereto, and a resulting mixture is subjected to precipitation. Dicyandiamide could stabilize framework, and polytetrafluoroethylene, calcium sulfate and/or sodium dodecyl sulfate act as co-precipitants, causing raw materials to precipitate in the action of repulsive forces to obtain a porous precipitate. The porous precipitate is then impregnated with a metal salt solution and then calcined to obtain metal-loaded nanocarbon spheres.
    Type: Application
    Filed: October 31, 2024
    Publication date: June 5, 2025
    Inventors: Shuai WANG, Huangzhao WEI, Libo WU, Jie BAI, Jing LI, Xin RONG, Ying ZHAO
  • Patent number: 12311545
    Abstract: A walking control method for a biped robot includes: detecting whether the biped robot is in an unbalanced state; in response to detection that the biped robot is in the unbalanced state, obtaining a predicted balance step length corresponding to the biped robot in the unbalanced state; performing a smooth transition processing on the predicted balance step length according to a current movement step length of the biped robot to obtain a desired balance step length corresponding to the predicted balance step length; determining a planned leg trajectory of the biped robot according to the desired balance step length; and controlling a current swing leg of the biped robot to move according to the planned leg trajectory.
    Type: Grant
    Filed: December 28, 2022
    Date of Patent: May 27, 2025
    Assignee: UBTECH ROBOTICS CORP LTD
    Inventors: Chunyu Chen, Jie Bai, Yizhang Liu, Ligang Ge, Zheng Xie, Youjun Xiong
  • Publication number: 20250163018
    Abstract: The present disclosure discloses a key amino acid-induced new crystal forms of trelagliptin based on protein-drug interaction structure mining and preparation method thereof; the technical solution is to introduce key amino acids into the solvent crystallization system of trelagliptin to induce five new crystal forms of trelagliptin; the preparation method does not require the use of a large amount of organic solvent, and has the characteristics of simplicity, precision and high efficiency, with a strong ability of crystal form regulation, and energy saving, environmental protection, safety, and easy to realize green industrial production.
    Type: Application
    Filed: January 15, 2025
    Publication date: May 22, 2025
    Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY
    Inventors: Kailin XU, Jianping WANG, Jierui HUO, Jie BAI, Suqing ZHAO, Xinyu LIU, Liyin LIANG, Shujin LIAO
  • Patent number: 12292738
    Abstract: A trajectory planning method, a computer-readable storage medium, and a robot are provided. The method includes: constructing a phase variable of a trajectory planning of a robot, where the phase variable is a function of two position components of a torso of the robot on a horizontal plane; and performing, using the phase variable replacing a time variable, the trajectory planning on a swinging leg of the robot in each preset coordinate axis direction. In this manner, the robot can no longer continue to follow the established trajectory after being disturbed by the environment, but make state adjustments according to the disturbance received to offset the impact of the disturbance, thereby maintaining walking stability and avoiding the problem of early or late landing of the swinging leg.
    Type: Grant
    Filed: July 16, 2023
    Date of Patent: May 6, 2025
    Assignee: UBTECH ROBOTICS CORP LTD
    Inventors: Qiuyue Luo, Ligang Ge, Yizhang Liu, Jie Bai, Youjun Xiong
  • Patent number: 12280510
    Abstract: A biped robot control methods and a biped robot using the same as well as a computer readable storage medium are provided. The method includes: obtaining an initial distance between a centroid of a double inverted pendulum model of the biped robot and a support point of the biped robot, an initial moving speed of the centroid and an initial displacement of the centroid; calculating a measured value of a stable point of the doable inverted pendulum model based on the initial distance and the initial moving speed; calculating a control output quantity based on the initial moving speed and the measured value of the stable point; calculating a desired displacement of the centroid of the double-inverted pendulum model based on the initial moving speed, the initial displacement, and the control output quantity; and controlling the biped robot to move laterally according to the desired displacement.
    Type: Grant
    Filed: February 23, 2022
    Date of Patent: April 22, 2025
    Assignee: UBTECH ROBOTICS CORP LTD
    Inventors: Chunyu Chen, Youjun Xiong, Yizhang Liu, Qiuyue Luo, Ligang Ge, Jie Bai, Jiangchen Zhou
  • Patent number: 12271329
    Abstract: Systems, apparatuses and methods may provide for technology that collects, by a BIOS (basic input output system), memory information from a first host path to a coherent device memory on a memory expander, wherein the memory expander includes a plurality of host paths, transfers the memory information from the BIOS to an OS (operating system) via one or more OS interface tables, and initializes, by the OS, the memory expander based on the memory information, wherein the memory information includes memory capabilities and configuration settings associated with the memory expander.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: April 8, 2025
    Assignee: Intel Corporation
    Inventors: Zhuangzhi Li, Jie Bai, Di Zhang, Changcheng Liu, Zhonghua Sun
  • Patent number: 12230041
    Abstract: An information playback method and device, a computer readable storage medium, and an electronic device, relating to the technical field of computers. Said method comprises: performing identification on a spatial image in a 3D model and obtaining an information display device and a display area in the spatial image (201); determining the display position information corresponding to the display area (202); overlaying an information playback layer in the display area according to the display position information so as to play back display information in the information playback layer (203). By overlaying an information playback layer on the information display device in a 3D model, further information exchange can be implemented in the 3D model, so that user can experience a more reality-like scenario in the 3D model, thereby enhancing user experience.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: February 18, 2025
    Assignee: Realsee (Beijing) Technology Co., Ltd.
    Inventors: Jie Bai, Min Xiao, Yi Zhu, Yang Li
  • Patent number: 12226903
    Abstract: A method for controlling gait of a biped robot includes: collecting a lateral center of mass (CoM) speed and a lateral CoM position of the biped robot when the biped robot walks in place; calculating phase variables of virtual constraints corresponding to the CoM of the biped robot in a first phase and a second phase according to the lateral CoM speed and the lateral CoM position; constructing motion trajectory calculation equations for the biped robot based on the phase variables corresponding to the first phase and the second phase, respectively; and finding inverse solutions for joints of the biped robot using the motion trajectory calculation equations to obtain joint angles corresponding to each of the joints of the biped robot to realize gait control.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: February 18, 2025
    Assignee: UBTECH ROBOTICS CORP LTD
    Inventors: Qiuyue Luo, Ligang Ge, Yizhang Liu, Chunyu Chen, Jie Bai
  • Patent number: 12191142
    Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The method includes: providing a substrate including a core NMOS area, a core PMOS area and a peripheral NMOS area; performing oxidation treatment on the substrate in the core PMOS area to convert a thickness of a part of the substrate in the core PMOS area into an oxide layer; removing the oxide layer; forming a first semiconductor layer on the remaining substrate in the core PMOS area; forming a gate dielectric layer located on the first semiconductor layer and on the substrate in the core NMOS area and the peripheral NMOS area; and forming a gate on the gate dielectric layer.
    Type: Grant
    Filed: January 12, 2022
    Date of Patent: January 7, 2025
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Kang You, Jie Bai
  • Patent number: 12185525
    Abstract: The present disclosure provides a method for manufacturing a semiconductor device and a semiconductor device. The method for manufacturing a semiconductor device includes: providing a substrate; forming a plurality of first structures extending in a first direction on the substrate; forming a sacrificial layer on sidewalls of the first structures; forming an outer spacer layer on a sidewall of the sacrificial layer; removing part of the outer spacer layer to obtain a patterned outer spacer layer that exposes part of the sacrificial layer; and removing the sacrificial layer to form air gaps between the patterned outer spacer layer and the first structures.
    Type: Grant
    Filed: June 22, 2021
    Date of Patent: December 31, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Mengmeng Yang, Jie Bai
  • Patent number: 12148619
    Abstract: A manufacturing method for a semiconductor structure includes: a substrate is provided, the substrate including a first region and a second region; a dielectric layer is formed on the substrate; a first diffusion film layer having a first metal oxide layer is formed on the dielectric layer; the first diffusion film layer corresponding to the second region is removed; a second diffusion film layer is formed on the dielectric layer corresponding to the second region, the second diffusion film layer including a second metal oxide layer interfacing with the dielectric layer; and an annealing treatment is performed to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region and diffuse a second metal element in the second metal oxide layer into the dielectric layer corresponding to the second region.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: November 19, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Mengmeng Yang, Jie Bai
  • Patent number: 12138803
    Abstract: A method for controlling a legged robot includes: in response to detection of a collision event associated with a foot of a swing leg of the biped robot, terminating a trajectory component planning of the swing leg in a collision direction; calculating a position offset in the collision direction according to an external force that is received by the foot of the swing leg in the collision direction and obtained in real time, based on a foot dragging control mode, and determining a replanned trajectory component in the collision direction based on the position offset; and controlling the swing leg to move based on the replanned trajectory component in the collision direction and a desired trajectory component of the swing leg in a non-collision direction.
    Type: Grant
    Filed: December 28, 2022
    Date of Patent: November 12, 2024
    Assignee: UBTECH ROBOTICS CORP LTD
    Inventors: Chunyu Chen, Yizhang Liu, Ligang Ge, Jie Bai, Jiangchen Zhou, Qiuyue Luo, Youjun Xiong
  • Patent number: 12136550
    Abstract: A method for manufacturing a semiconductor structure includes: forming a first diffusion film layer on a dielectric layer, a thickness of the first diffusion film layer being not less than a thickness of a doped layer; forming a hard mask on the first diffusion film layer; etching each film layer corresponding to a first region and a second region toward a substrate, until the first diffusion film layer corresponding to the first region is exposed; and next, removing a first metal oxide layer remaining on the dielectric layer corresponding to the second region. As a result of the presence of the doped layer, the hard mask corresponding to the second region has a relatively small thickness.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: November 5, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Jie Bai, Kang You
  • Patent number: 12131953
    Abstract: A semiconductor structure and a forming method thereof are provided. The forming method of the semiconductor structure comprises: providing a substrate comprising a first area for forming a P-channel Metal Oxide Semiconductor (PMOS) transistor and a second area for forming an N-channel Metal Oxide Semiconductor (NMOS) transistor; forming a channel layer on the surface of the first area of the substrate; adjusting the oxidation rate of the channel layer to reduce the difference between the oxidation rate of the channel layer and the oxidation rate of the substrate; and oxidizing the surfaces of the channel layer and the second area of the substrate to form a first transition oxide layer covering the surface of the channel layer and a second transition oxide layer covering the surface of the second area of the substrate.
    Type: Grant
    Filed: January 12, 2022
    Date of Patent: October 29, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Juanjuan Huang, Jie Bai
  • Patent number: 12122468
    Abstract: A stepping down trajectory planning method as well as a robot using the same and a computer readable storage medium are provided. The method includes: dividing a stepping down process of the robot into a plurality of planned stages; adjusting a start position of a swing leg of the robot according to an ankle-to-heel distance, where the ankle-to-heel distance is a horizontal distance between an ankle joint of the swing leg of the robot and a heel of the swing leg of the robot; determining an initial state and an end state of the swing leg in each of the planned stages according to the start position; and obtaining a planned trajectory of the swing leg by performing a curve fitting on the swing leg in each of the planned stages the initial state and the end state.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: October 22, 2024
    Assignee: UBTECH ROBOTICS CORP LTD
    Inventors: Hongge Wang, Ligang Ge, Yizhang Liu, Jie Bai, Chunyu Chen, Xingxing Ma, Jiangchen Zhou, Youjun Xiong
  • Patent number: 12120863
    Abstract: A semiconductor structure includes a substrate, a storage capacitor unit, a transistor, and an electrical connection structure. The storage capacitor unit is located at an array area and includes: N insulation posts, distributed in a direction parallel to a surface of the substrate; a bottom electrode layer; a top electrode layer, directly facing the bottom electrode layer; and a capacitor dielectric layer, located between the top and bottom electrode layers. One of the bottom or top electrode layers corresponding to the N insulation posts is a continuous film layer, and the other is discrete film layers. The transistor is located at a circuit area and includes a capacitor control terminal located in the substrate of the circuit area. The electrical connection structure is electrically connected to the capacitor control terminal, and extends from the circuit area to the array area to come into contact with a corresponding discrete film layer.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: October 15, 2024
    Assignees: CHANGXIN MEMORY TECHNOLOGIES, INC., BEIJING SUPERSTRNG ACADEMY OF MEMORY TECHNOLOGY
    Inventors: Kang You, Jie Bai
  • Patent number: 12119222
    Abstract: A method for preparing a semiconductor structure includes: providing a substrate which includes a device region and a shallow trench isolation region surrounding the device region, in which the device region is exposed from a surface of the substrate; depositing a barrier layer on the substrate, the barrier layer at least covering the device region; forming an initial oxide which is located in the device region and in contact with the barrier layer; and removing part of the initial oxide to form a device oxide.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: October 15, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Mengmeng Yang, Jie Bai
  • Patent number: 12112424
    Abstract: Systems and methods for constructing a panoramic view based on a changing viewpoint are disclosed. An exemplary system includes a storage device configured to receive first image data of a scene for a first viewpoint at a first predetermined elevation. The system further includes at least one processor configured to convert the first image data to candidate image data for at one or more second predetermined elevations using a deep learning neural network. The at least one processor is further configured to receive a user view request for virtually viewing the scene and determine second image data for a second viewpoint associated with the user view request, by mapping the second viewpoint to the one or more second predetermined elevations. The at least one processor is also configured to render the three-dimensional model of the scene based on the second image data and display the panoramic view in response to the user view request.
    Type: Grant
    Filed: April 27, 2022
    Date of Patent: October 8, 2024
    Assignee: REALSEE (BEIJING) TECHNOLOGY CO., LTD.
    Inventors: Jie Bai, Yi Zhu, Dufang Xie