Abstract: A trajectory planning method, a computer-readable storage medium, and a robot are provided. The method includes: constructing a phase variable of a trajectory planning of a robot, where the phase variable is a function of two position components of a torso of the robot on a horizontal plane; and performing, using the phase variable replacing a time variable, the trajectory planning on a swinging leg of the robot in each preset coordinate axis direction. In this manner, the robot can no longer continue to follow the established trajectory after being disturbed by the environment, but make state adjustments according to the disturbance received to offset the impact of the disturbance, thereby maintaining walking stability and avoiding the problem of early or late landing of the swinging leg.

Abstract: A biped robot control methods and a biped robot using the same as well as a computer readable storage medium are provided. The method includes: obtaining an initial distance between a centroid of a double inverted pendulum model of the biped robot and a support point of the biped robot, an initial moving speed of the centroid and an initial displacement of the centroid; calculating a measured value of a stable point of the doable inverted pendulum model based on the initial distance and the initial moving speed; calculating a control output quantity based on the initial moving speed and the measured value of the stable point; calculating a desired displacement of the centroid of the double-inverted pendulum model based on the initial moving speed, the initial displacement, and the control output quantity; and controlling the biped robot to move laterally according to the desired displacement.

Abstract: Systems, apparatuses and methods may provide for technology that collects, by a BIOS (basic input output system), memory information from a first host path to a coherent device memory on a memory expander, wherein the memory expander includes a plurality of host paths, transfers the memory information from the BIOS to an OS (operating system) via one or more OS interface tables, and initializes, by the OS, the memory expander based on the memory information, wherein the memory information includes memory capabilities and configuration settings associated with the memory expander.

Abstract: A method for controlling gait of a biped robot includes: collecting a lateral center of mass (CoM) speed and a lateral CoM position of the biped robot when the biped robot walks in place; calculating phase variables of virtual constraints corresponding to the CoM of the biped robot in a first phase and a second phase according to the lateral CoM speed and the lateral CoM position; constructing motion trajectory calculation equations for the biped robot based on the phase variables corresponding to the first phase and the second phase, respectively; and finding inverse solutions for joints of the biped robot using the motion trajectory calculation equations to obtain joint angles corresponding to each of the joints of the biped robot to realize gait control.

Abstract: An information playback method and device, a computer readable storage medium, and an electronic device, relating to the technical field of computers. Said method comprises: performing identification on a spatial image in a 3D model and obtaining an information display device and a display area in the spatial image (201); determining the display position information corresponding to the display area (202); overlaying an information playback layer in the display area according to the display position information so as to play back display information in the information playback layer (203). By overlaying an information playback layer on the information display device in a 3D model, further information exchange can be implemented in the 3D model, so that user can experience a more reality-like scenario in the 3D model, thereby enhancing user experience.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The method includes: providing a substrate including a core NMOS area, a core PMOS area and a peripheral NMOS area; performing oxidation treatment on the substrate in the core PMOS area to convert a thickness of a part of the substrate in the core PMOS area into an oxide layer; removing the oxide layer; forming a first semiconductor layer on the remaining substrate in the core PMOS area; forming a gate dielectric layer located on the first semiconductor layer and on the substrate in the core NMOS area and the peripheral NMOS area; and forming a gate on the gate dielectric layer.

Abstract: The present disclosure provides a method for manufacturing a semiconductor device and a semiconductor device. The method for manufacturing a semiconductor device includes: providing a substrate; forming a plurality of first structures extending in a first direction on the substrate; forming a sacrificial layer on sidewalls of the first structures; forming an outer spacer layer on a sidewall of the sacrificial layer; removing part of the outer spacer layer to obtain a patterned outer spacer layer that exposes part of the sacrificial layer; and removing the sacrificial layer to form air gaps between the patterned outer spacer layer and the first structures.

Abstract: A manufacturing method for a semiconductor structure includes: a substrate is provided, the substrate including a first region and a second region; a dielectric layer is formed on the substrate; a first diffusion film layer having a first metal oxide layer is formed on the dielectric layer; the first diffusion film layer corresponding to the second region is removed; a second diffusion film layer is formed on the dielectric layer corresponding to the second region, the second diffusion film layer including a second metal oxide layer interfacing with the dielectric layer; and an annealing treatment is performed to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region and diffuse a second metal element in the second metal oxide layer into the dielectric layer corresponding to the second region.

Abstract: A method for controlling a legged robot includes: in response to detection of a collision event associated with a foot of a swing leg of the biped robot, terminating a trajectory component planning of the swing leg in a collision direction; calculating a position offset in the collision direction according to an external force that is received by the foot of the swing leg in the collision direction and obtained in real time, based on a foot dragging control mode, and determining a replanned trajectory component in the collision direction based on the position offset; and controlling the swing leg to move based on the replanned trajectory component in the collision direction and a desired trajectory component of the swing leg in a non-collision direction.

Abstract: A method for manufacturing a semiconductor structure includes: forming a first diffusion film layer on a dielectric layer, a thickness of the first diffusion film layer being not less than a thickness of a doped layer; forming a hard mask on the first diffusion film layer; etching each film layer corresponding to a first region and a second region toward a substrate, until the first diffusion film layer corresponding to the first region is exposed; and next, removing a first metal oxide layer remaining on the dielectric layer corresponding to the second region. As a result of the presence of the doped layer, the hard mask corresponding to the second region has a relatively small thickness.

Abstract: A semiconductor structure and a forming method thereof are provided. The forming method of the semiconductor structure comprises: providing a substrate comprising a first area for forming a P-channel Metal Oxide Semiconductor (PMOS) transistor and a second area for forming an N-channel Metal Oxide Semiconductor (NMOS) transistor; forming a channel layer on the surface of the first area of the substrate; adjusting the oxidation rate of the channel layer to reduce the difference between the oxidation rate of the channel layer and the oxidation rate of the substrate; and oxidizing the surfaces of the channel layer and the second area of the substrate to form a first transition oxide layer covering the surface of the channel layer and a second transition oxide layer covering the surface of the second area of the substrate.

Abstract: A stepping down trajectory planning method as well as a robot using the same and a computer readable storage medium are provided. The method includes: dividing a stepping down process of the robot into a plurality of planned stages; adjusting a start position of a swing leg of the robot according to an ankle-to-heel distance, where the ankle-to-heel distance is a horizontal distance between an ankle joint of the swing leg of the robot and a heel of the swing leg of the robot; determining an initial state and an end state of the swing leg in each of the planned stages according to the start position; and obtaining a planned trajectory of the swing leg by performing a curve fitting on the swing leg in each of the planned stages the initial state and the end state.

Abstract: A semiconductor structure includes a substrate, a storage capacitor unit, a transistor, and an electrical connection structure. The storage capacitor unit is located at an array area and includes: N insulation posts, distributed in a direction parallel to a surface of the substrate; a bottom electrode layer; a top electrode layer, directly facing the bottom electrode layer; and a capacitor dielectric layer, located between the top and bottom electrode layers. One of the bottom or top electrode layers corresponding to the N insulation posts is a continuous film layer, and the other is discrete film layers. The transistor is located at a circuit area and includes a capacitor control terminal located in the substrate of the circuit area. The electrical connection structure is electrically connected to the capacitor control terminal, and extends from the circuit area to the array area to come into contact with a corresponding discrete film layer.

Abstract: A method for preparing a semiconductor structure includes: providing a substrate which includes a device region and a shallow trench isolation region surrounding the device region, in which the device region is exposed from a surface of the substrate; depositing a barrier layer on the substrate, the barrier layer at least covering the device region; forming an initial oxide which is located in the device region and in contact with the barrier layer; and removing part of the initial oxide to form a device oxide.

Abstract: Systems and methods for constructing a panoramic view based on a changing viewpoint are disclosed. An exemplary system includes a storage device configured to receive first image data of a scene for a first viewpoint at a first predetermined elevation. The system further includes at least one processor configured to convert the first image data to candidate image data for at one or more second predetermined elevations using a deep learning neural network. The at least one processor is further configured to receive a user view request for virtually viewing the scene and determine second image data for a second viewpoint associated with the user view request, by mapping the second viewpoint to the one or more second predetermined elevations. The at least one processor is also configured to render the three-dimensional model of the scene based on the second image data and display the panoramic view in response to the user view request.

Abstract: A fracture simulation system is provided to determine anisotropic effective permeability of rock formations having natural fractures therein.

Abstract: A path planning method and a biped robot using the same are provided. The method includes: generating a candidate node set for a next foot placement based on a biped robot's own parameters and joint information of a current node, adding valid candidate nodes in the candidate node set to a priority queue so as to select optimal nodes for realizing next node expansion. These optimal nodes are output to generate a foot placement sequence from an initial node to a target node, which can greatly reduce the search amount for path nodes when the robot's legs intersect and touch the ground, thereby improving the efficiency of path planning.

Abstract: A semiconductor structure and a method for manufacturing same are provided. The semiconductor structure includes: a doped conductive layer, doped with dopant ions; a metal conductive layer, located above the doped conductive layer; a nitrogen-containing dielectric layer, located above the metal conductive layer; a first molybdenum nitride layer, located between the doped conductive layer and the metal conductive layer and configured to be electrically connected to the doped conductive layer and the metal conductive layer; and a second molybdenum nitride layer, located between the metal conductive layer and the nitrogen-containing dielectric layer, where an atomic ratio of nitrogen atoms in the second molybdenum nitride layer is greater than an atomic ratio of nitrogen atoms in the first molybdenum nitride layer.

Abstract: A method for generating a center of mass (CoM) trajectory includes determining an actual pose of a center of mass (CoM), a pose of a left foot, and a pose of a right pose of a robot; determining a first pose tracking vector of the robot according to the actual pose of the CoM and the pose of the left foot, and determining a second pose tracking vector of the robot according to the actual pose of the CoM and the pose of the right foot; and controlling a desired pose of the CoM of the robot to alternately track the pose of the left foot and the pose of the right foot, according to the first pose tracking vector and the second pose tracking vector, so as to generate a desired CoM trajectory of the robot.

Abstract: A method of manufacturing a semiconductor structure and a semiconductor structure are disclosed in embodiments of the present disclosure. The method of manufacturing a semiconductor includes: providing a base; and forming an electrical contact layer, a bottom barrier layer, and a conductive layer that are sequentially stacked on the base, where a material of the conductive layer includes molybdenum.