Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10?2 ?cm to about 10 ?cm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.

Abstract: Embodiments described herein provide an apparatus for facilitating a double-density small form-factor pluggable (SFP-DD) module. The apparatus includes a set of control connector pins for exchanging control signals. The apparatus also includes a first set of communication connector pins for establishing a first communication channel and a second set of communication connector pins for establishing a second communication channel. The set of control connector pins and the first set of communication connector pins correspond to connector pins of an SFP module, and the second set of communication connector pins extends the SFP module. The size of the SFP-DD module corresponds to the size of the SFP module.

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.

Abstract: A display apparatus including a backlight module is disclosed. The backlight module includes a back plate and a rubber frame located at a periphery of the back plate. The back plate has a protrusion facing towards the rubber frame. The rubber frame has a snap slot facing towards the back plate. The back plate and the rubber frame are connected to each other through meshing between the protrusion and the snap slot.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.

Abstract: A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O?2:1.

Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: Provided are a driving circuit and its operation method and a display apparatus. The driving circuit comprises a boost circuit unit, a load unit and a voltage monitoring unit, the load unit is connected to a power source providing an initial input voltage, the boost circuit unit is connected to both the load unit and the voltage monitoring unit, the load unit is connected to the voltage monitoring unit; the load unit provides a resistor of fixed resistance value; and the voltage monitoring unit determines whether an actual voltage input into the boost circuit unit is smaller than a predetermined voltage, and generates a reset signal which is used to control the driving circuit to restart if it is determined that the actual voltage is smaller than the predetermined voltage.

Abstract: A system includes an infrared camera, an infrared light source, and a processor. The processor is programmed to receive, from the infrared camera, an image of a hand illuminated using the infrared light source, and send the image to a remote server to identify a user corresponding to the hand according to a vein pattern of the hand. An image of a hand illuminated using an infrared light source is received from an infrared camera. Region-of-interest segmentation is performed on the image to generate a segmented image of consistent hand location and orientation. Feature extraction is performed on the segmented image to generate a feature-extracted vein image. Matching of the feature-extracted vein image is performed against a database of feature-extracted vein images to identify a user identity corresponding to the hand.

Abstract: The present invention relates to the communications field, and provides a phased array calibration method and a phased array calibration circuit. The phased array calibration circuit includes a signal obtaining module, a selector, a phase difference module, and a main signal module. The selector is configured to switch on the signal obtaining module and the main signal module; the signal obtaining module is configured to obtain a first signal according to an initial signal after the selector switches on the signal obtaining module and the main signal module; the selector is further configured to switch on the phase difference module, the signal obtaining module, and the main signal module; and the signal obtaining module is further configured to obtain a second signal according to the initial signal after the selector switches on the phase difference module, the signal obtaining module, and the main signal obtaining module.

Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.

Abstract: Methods and apparatus to generate corrected online audience measurement data are disclosed. An example method includes determining a corrected audience count of streaming media for a demographic group by: calculating a deduplication factor for a demographic group using a first audience count, a second audience count, and a third audience count; estimating a fourth audience count for the demographic group, the fourth audience count indicative of a number of people who accessed the streaming media; estimating a fifth audience count for the demographic group, the fifth audience count indicative of a number of people who accessed text content; and applying the deduplication factor to a sum of the fourth audience count and the fifth audience count to determine the corrected audience count. The example method also includes generating ratings information for the streaming media based on subtracting the corrected audience count from the first audience count.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A computing system can include an advertisement server that, as part of an auction for a paid search advertisement, calculates an original score for a particular bidder by using a scoring function; calculates an optimized score for the particular bidder by obtaining a score estimate from a system storing results of an offline historical model for the particular bidder, calculating a reserve price value by calculating ?(s*-?i), and adding the reserve price value (which may be a negative value) to the original score; and assigns the particular bidder to a paid search advertisement slot according to the optimized score. The optimized score can be represented by the formula {tilde over (s)}i=si+?(s*??i), where si is the original score, ? is a multiplier between 0 and 1, s* is a fixed point that may be equal to 0, and ?i is the score estimate for the bidder that comes from the offline historical model.