Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: The present invention relates to a method of preparing a nano-sized, iron-based catalyst, the method comprising: mixing a solution containing an iron salt with a surfactant to form a mixture; adding a basic salt solution comprising a salt of element selected from the group consisting of: alkali metals, alkaline earth metals, transition metals of groups 3 to 7 and 9 to 11 of the Periodic Table of Elements, lanthanides, and combinations of elements thereof, to the mixture to form a precipitate; and calcining said precipitate to form the iron-based catalyst, said iron-based catalyst at least partially comprising said element of said basic salt. The present invention also relates to a nano-sized, iron-based catalyst prepared by the above method and a process for the production of light olefins using the nano-sized, iron-based catalyst.

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: The present invention relates to a hybrid iron nanoparticle catalyst comprising: i) 1 to 50 wt. % nanoparticles comprising iron and at least one of a metal M selected from the group consisting of alkali metals, alkaline earth metals, transition metals of groups 3 to 7 and 9 to 11 of the Periodic Table of Elements, lanthanides and combinations of M thereof; and ii) 50 to 99 wt. % of an aluminosilicate or silicoaluminophosphate zeolite, based on the total weight of the catalyst, wherein said nanoparticle has a diameter of about 2 to 50 nm. The present invention also relates to a method of preparing the hybrid iron nanoparticle catalyst and a process for the production of light olefins using the hybrid iron nanoparticle catalyst.

Abstract: Provided is a block copolymer composition which contains a block copolymer having a specific molecular structure and has a molecular weight distribution within an appropriate range. A polymerizable composition containing a macromonomer (A) which has a group having a radical-reactive unsaturated double bond at one terminal of a poly(meth)acrylate segment, a vinyl monomer (B), and an organic iodine compound (C), or a polymerizable composition containing a macromonomer (A), a vinyl monomer (B), an azo-based radical polymerization initiator (E), and iodine is polymerized to obtain a block copolymer composition containing a block copolymer in which constitutional units of all blocks are derived from vinyl monomers and at least one block has a branched structure.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: A structural color coating based on Mie scattering of high-refractive index microspheres has the following components in parts by mass: 5 to 20 parts of nano microspheres having a highly uniform particle size and a theoretical refractive index greater than 1.7, 75 to 90 parts of dispersion liquid, 0.1 to 5 parts of a surfactant, and 1 to 5 parts of an adhesive. The structural color coating forms a local microcosmic ordered, macroscopic long-range disordered structural film by means of spraying coating, blade coating, brushing coating, roll coating or dip-coating; the matrix is glass, metal, textile, ceramic, plastic or paper; the surfactant is sodium dodecyl benzene sulfonate, cetyl sodium sulfate, stearic acid, or sodium stearate; the nano microsphere is at least one of ZnS, ZnO, CdS, Cu2O, CaS, CuS, Cu2S, TiO2, ZrO2 or CeO2; the particle size of the nano microspheres ranges from 200 to 500 nm.

Abstract: In one general aspect, an apparatus can include a semiconductor component, a substrate including a recess, and a conductive-bonding component. The conductive-bonding component is disposed between the semiconductor component and the substrate. The conductive-bonding component has a first thickness between a bottom of the recess and a bottom surface of the semiconductor component greater than a second thickness between the top of the substrate and the bottom surface of the semiconductor component.

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

Abstract: Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

Abstract: Devices and methods for selectively etching a metal nitride layer are disclosed. The methods comprise an oxidation step and an etching step which are optionally separated by a purge, and which can be repeated in a cyclical etching process.

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

Abstract: In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.