Abstract: A question and answer interaction method includes: receiving a question from a user, the question including at least one intention and at least one element related to each of the at least one intention; performing intention analysis on the question to obtain the at least one intention and the at least one element related to each of the at least one intention; obtaining an answer corresponding to the question according to the at least one intention and the at least one element related to each of the at least one intention; and sending the answer to the user.

Abstract: A method for establishing an intelligent question answering repository comprises: obtaining structured data including a title, a header and a table body; determining two or more sorts of attribute information corresponding to the table body from the header, each of the two or more sorts of attribute information corresponding to header contents of one or more columns; generating one or more question and answer knowledge points according to the attribute information, each question and answer knowledge point including a question expression and an answer expression, and the answer expression including the title; and storing the structured data, the question and answer knowledge points and the attribute information into a repository.

Abstract: A method for resource allocation and related products are provided. The method includes the following. A selection operation performed on a target widget of an operation interface of a target application of a terminal device is received by an operating system of the terminal device. A resource adjustment strategy corresponding to the selection operation performed on the target widget is obtained by the operating system, and allocation of at least one system resource for the target application is adjusted by the operating system within a time interval associated with the selection operation performed on the target widget according to the resource adjustment strategy.

Abstract: A method for resource allocation and a terminal device are provided. The method includes the following. System-state information of a terminal device is acquired, and the terminal device has a target application running in a foreground of the terminal device. An internal running scenario of the target application is determined according to the system-state information. A performance improvement strategy corresponding to the internal running scenario is acquired. Allocation of system resources for the internal running scenario is adjusted according to the performance improvement strategy.

Abstract: A method for resource allocation and a terminal device are provided. The method includes the following. An operating system first identifies an internal running scenario of a target application running in a foreground of a terminal device. The operating system then acquires a plurality of resource adjustment strategies associated with preset system resources to-be-adjusted in the internal running scenario. The operating system acquires status information of the internal running scenario. Thereafter, the operating system adjusts usage priorities of the plurality of resource adjustment strategies according to the status information. The operating system adjusts the preset system resources to-be-adjusted by selecting a resource adjustment strategy with the highest priority.

Abstract: A method for resource allocation and a terminal device are provided. The method includes the following operations. An operating system of a terminal device receives a scenario data packet of a photography application that is currently running on the terminal device, where the scenario data packet includes a performance improvement strategy determined by the photography application according to a running scenario. The operating system acquires the performance improvement strategy by analyzing the scenario data packet. The operating system adjusts allocation of system resources for the photography application according to the performance improvement strategy.

Abstract: This invention provides biomarkers based on the gene expression profiling which can discriminate between patients who response to and/or with longer progression free survival and patients who do not response to and/or with shorter progression free survival from copanlisib treatment in lymphoma including indolent and aggressive NHLs and CLLs. The present invention relates to the use of genes from the BCR, PI3K, NFkB, IL6, inflammation and stromal processes as predictive biomarkers for various human cancers including but not limited to NHLs.

Abstract: Embodiments of the application provide a resource configuration method, a mobile terminal and a storage medium. An operating system in an operating system space of a mobile terminal firstly receives a scenario data packet sent by a running target application program, the scenario data packet comprising an application type identifier and a scenario identifier of the target application program, then determines a performance improvement strategy according to the application type identifier and the scenario identifier, and adjusts allocation of a system resource for the target application program according to the performance improvement strategy.

Abstract: A method for resource allocation and related products are provided. The method includes the following operations. An operating system in an operating system space of a terminal device receives a scenario data package from a target application that is currently running, where the scenario data package contains an identifier and key performance parameters of the target application that is currently running. The operating system determines a performance improvement strategy for the target application that is currently running according to the identifier and the key performance parameters. The operating system adjusts allocation of system resources for the target application that is currently running according to the performance improvement strategy.

Abstract: A method for resource allocation and a terminal device are provided. The method includes the following operations. A management module of an operating system receives a scenario data package from a target application that is currently running, where the scenario data package contains a scenario associated information of the target application. A strategy module of the operating system determines a performance improvement strategy for the target application according to the scenario data package. The operating system adjusts allocation of system resources for the target application according to the performance improvement strategy.

Abstract: A system can include a wind turbine and a generator coupled with the wind turbine for converting wind energy to electrical energy. The system can also include a variable displacement machine configured to use the wind energy to compress a fluid (e.g., when the wind energy exceeds a capacity limit of the generator). The variable displacement machine can also be coupled between the generator and the storage tank and configured to use the compressed fluid to furnish power to the generator (e.g., when the generator experiences a capacity vacancy). The system can also include a storage tank for storing fluid compressed by the variable displacement machine. A variable displacement machine that can be used as a compressor or an expander may include pistons that can be shifted (e.g., to adjust the strokes of the pistons). Further, the variable displacement machine can include a plate with a wobble angle that can be adjusted to be positive, neutral, or negative.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

Abstract: FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and a single spacer wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The single spacer wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.

Abstract: A wireless access point device wirelessly communicates with a plurality of wireless client devices. The wireless access point includes a central processor subsystem and a plurality of transceiver devices each including a plurality of antennas, and a plurality of radio transceivers, each of the plurality of transceiver devices configured for deployment throughout a coverage area, each transceiver device being connected to the central processor subsystem via a respective cable. The central processor subsystem distributes in-phase and quadrature baseband samples across the plurality of transceiver devices associated with traffic to be transmitted and received via the plurality of transceiver devices in one or more frequency bands so as to synthesize a wideband multiple-input multiple-output transmission channel and a wideband multiple-input multiple-output reception channel. The access point transmit and receive functions are “split” or partitioned across the plurality of transceivers devices.

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

Abstract: The present invention discloses a touch panel having a multitude of driving and sensing electrodes and a touch detecting method therefor.

Abstract: A semiconductor device includes a semiconductor fin, a lining oxide layer, a silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top fin surface, an upper fin side surface portion adjacent to the top fin surface, and a lower fin side surface contiguously connected to the upper fin side surface portion. The lining oxide layer peripherally encloses the lower fin side surface portion of the semiconductor fin. The silicon nitride based layer is disposed conformally over the lining oxide layer. The gate oxide layer is disposed conformally over the top fin surface and the upper fin side surface portion.

Abstract: FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and a single spacer wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The single spacer wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.

Abstract: FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and an insulating wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The insulating wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.