Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

Abstract: Provided are a shoe counter assembly and a shoe. The shoe counter assembly includes a supporting member and a wrapping member. The supporting member includes a first side and a second side opposite to each other. The wrapping member protruding from the first side in a direction away from the second side, wherein the wrapping member includes a first projection and a second projection arranged in sequence along a height direction of the shoe counter assembly. Two ends of the first projection and the second projection being connected to each other such that a continuous curved surface is formed on a side of the wrapping member opposite to the supporting member along the height direction.

Abstract: The present invention discloses a modified biological bone mineral scaffold doped based on lithium magnesium phosphate, which is obtained by immersing a calcined bovine or porcine cancellous bone mineral porous scaffold into a solution containing one or more of active metal ions of magnesium, lithium, strontium, zinc, iron and calcium and a phosphorus source composite solution for hydrothermal reaction, baking, drying and calcining at a high temperature. The modified biological bone mineral scaffold doped based on lithium magnesium phosphate obtained in the present invention can effectively stabilize the doped magnesium lithium phosphate and one or more of other osteogenic active ions of strontium, zinc, iron and calcium. The material maintains the three-dimensional interconnected mesh structure and natural crystal structure of the calcined bovine or porcine cancellous bone mineral porous scaffold, and has calcium phosphate crystals containing active ions.

Abstract: A resistive memory device includes a bottom electrode, a switching layer disposed over the bottom electrode, a top electrode disposed over the switching layer, and an auxiliary layer disposed between the switching layer and one of the top electrode and the bottom electrode. The one of the top electrode and the bottom electrode includes a metal and is a relatively inert electrode in comparison with the other one of the top electrode and the bottom electrode. The auxiliary layer includes a nitride of the metal.

Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

Abstract: An apparatus is provided herein, which includes a memory device. The memory device includes a memory array, a storage device, and a memory controller. The storage device stores access parameters corresponding to a plurality of access modes. The memory controller accesses the memory array with the access parameters corresponding to one of the access modes. When the memory device is booted up, the memory controller flushes the access parameters corresponding to each of the access modes to the storage device.

Abstract: A complex microbial agent and applications thereof are provided. The complex microbial agent includes nitrogen-fixing Paenibacillus mucilaginosus MSSW01, potassium-releasing Paenibacillus mucilaginosus MSSW02, and Paenibacillus mucilaginosus MSSW03. The complex microbial agent can effectively promote the growth of plants through strain screening and plant growth promotion experiments, which is of great significance for improving the growth status of crops in the environment and the rhizosphere environment of crops, and improving the effect of microbial fertilizers.

Abstract: A multifunctional microbial agent and applications thereof are provided. The multifunctional microbial agent includes a composite microbial liquid and an adsorbable carrier, and the adsorbable carrier includes livestock and poultry manure, germ bran, and straw. Three new Bacillus strains with nitrogen-fixing, phosphorus-releasing, and potassium-releasing activities are screened and used as excellent microbial agents to produce strains. The multifunctional microbial agent produced by mixing the microbial liquid and exogenous organic raw materials, livestock and poultry manure and crop straw can better improve the soil microbial environment, activate soil to retain nutrients, promote crop nutrient absorption, and improve crop yield and quality.

Abstract: A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.

Abstract: A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.

Abstract: Disclosed is a preparation method for a single-crystal sodium-ion battery cathode material. The single-crystal sodium-ion battery cathode active material comprises: sodium, metal M, boron, and oxygen elements, and the preparation method comprises a step of adding an M-containing compound, a B-containing compound and a sodium source to water to form a slurry and sand grinding the slurry to obtain a mixed slurry and a step of spray drying the mixed slurry and sintering the dried mixed slurry to obtain the single-crystal sodium-ion battery cathode active material. The preparation method can be applied to a wide variety of raw materials, and can efficiently achieve uniform mixing of multiple raw materials at the nano level. After being sintered, the mixed slurry can form a perfect layered O3 phase structure. The prepared single-crystal sodium-ion battery cathode material has excellent electrochemical performance and cycle performance when used in a sodium-ion battery.

Abstract: Embodiments of the present disclosure provides a motor starter, the motor starter includes a housing including a base plate; power supply board disposed on the base plate; a first insulating board covering a side of the power supply board away from the base plate; a signal processing board disposed on a side of the first insulating board away from the base plate, and a first insulating part is disposed on a side of the signal processing board away from the base plate; and an interface board disposed on a side of the signal processing board away from the base plate, and a second insulating part is disposed on a side of the interface board facing the signal processing board, a second insulating board is disposed on a side of the interface board away from the signal processing board.

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

Abstract: A semiconductor device includes an insulated-gate bipolar transistor (IGBT) structure and a metal-oxide-semiconductor (MOS) transistor structure integrated in a wafer. The MOS transistor structure is connected in parallel with the IGBT structure. A thickness of a trench insulating layer in the MOS transistor structure is less than a thickness of a trench insulating layer in the IGBT structure.

Abstract: An earphone assembly includes an earphone and the earphone case, where the earphone has a first magnetic piece, and the earphone case includes a case body and a lid. The case body is provided with an accommodating slot configured to accommodate the earphone, and the lid is configured to open or close the case body. A second magnetic piece is disposed on the lid and is magnetically attached to the first magnetic piece. When the lid is lifted to open the case body, the earphone moves with the lid and is detached from the accommodating slot. When the lid is closed to close the case body, the earphone is attached to the lid and moves with the lid until the earphone is accommodated in the accommodating slot.