Abstract: The disclosure provides a method and a system for detecting a fiber fault in a Passive Optical Network (PON). The system comprises an optical path detection device, a Wavelength Division Multiplexing (WDM) coupler, a wavelength selection coupler, a branch fiber selector and a wavelength selection router. The detection system is attached to an original PON system, without influencing the operation of the original system while performing the detection. With the disclosure, the problem of being unable to determine whether there is a fault in a branch fiber due to the loss of an optical path detection reflection signal is solved, the branch fiber with a fault can be quickly located and fixed, thus the operational and maintenance costs of an operator are reduced.

Abstract: A method uses web servers to promulgate information from one server to another, instead of promulgating the information by the user to each server individually. A first server receives a first request for promulgating web-information from a user, locally promulgates the web-information, and sends a second request to at least one second website server to instruct the second website server to locally promulgate the web-information. The selection of the second server is done according to a preset configuration file which includes a relationship mapping between the first website server and the second website server. The relationship mapping may provide the user information related to the second website server based on the user information related to the first website server. The present disclosure further discloses a communication apparatus and a communication system.

Abstract: A method for amplifying and dynamically adjusting an optical signal is provided in the present invention, which includes: a first optical tap splitting out a small part of the optical signal, which is converted into an electric signal via a first optical detector and is then output to a high speed gain control circuit, in proportion from an uplink burst optical signal, and outputting a remainder of the optical signal to an optical amplifier; the high speed gain control circuit dynamically adjusting the control signal loaded on the optical amplifier according to the input electric signal which varies with uplink burst slots; and the optical amplifier dynamically adjusting a gain value according to the loaded control signal to make peak powers of the output uplink optical signals in different burst slots equal, thus achieving output power equalization.

Abstract: Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

Abstract: Techniques for estimating adaptive noise canceling (ANC) performance in a personal audio device, such as a wireless telephone, provide robustness of operation by triggering corrective action when ANC performance is low, and/or by saving a state of the ANC system when ANC performance is high. An anti-noise signal is generated from a reference microphone signal and is provided to an output transducer along with program audio. A measure of ANC gain is determined by computing a ratio of a first indication of magnitude of an error microphone signal that provides a measure of the ambient sounds and program audio heard by the listener including the effects of the anti-noise, to a second indication of magnitude of the error microphone signal without the effects of the anti-noise. The ratio can be determined for different frequency bands in order to determine whether particular adaptive filters are trained properly.

Abstract: Coupling between a user's ear and a speaker of a mobile device may be determined by measuring an impedance of the speaker. When the user presses the mobile device against the user's ear, the speaker impedance changes as a result of loading in the speaker's acoustic radiation impedance. The speaker impedance change may be correlated with the force applied by the user to the mobile device. The measured speaker impedance may be provided as feedback to an adaptive noise cancellation (ANC) algorithm to adjust the output at the speaker. For example, when the mobile device is removed from the user's ear, the ANC algorithm may be muted.

Abstract: In accordance with embodiments of the present disclosure, systems and methods may include a controller configured to be coupled to an audio speaker, wherein the controller receives one or more signals indicative of one or more operating characteristics of the audio speaker and compares the one or more operating characteristics to one or more speaker protection thresholds, and based on the comparison, processes an audio input signal to generate an audio output signal communicated from the controller to the audio speaker, further wherein the one or more speaker protection thresholds are based on offline reliability testing of one or more audio speakers similar to the audio speaker and the controller generates one or more modeled parameters for the audio speaker and modifies the one or more speaker protection thresholds based on the one or more modeled parameters.

Abstract: In accordance with these and other embodiments of the present disclosure, systems and methods may include a controller configured to be coupled to an audio speaker, wherein the controller receives an audio input signal, and based on a displacement transfer function associated with the audio speaker, processes the audio input signal to generate an output audio signal communicated to the audio speaker, wherein the displacement transfer function correlates an amplitude and a frequency of the audio input signal to an expected displacement of the audio speaker in response to the amplitude and the frequency of the audio input signal.

Abstract: Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

Abstract: Techniques for crack-free growth of GaN, and related, films on larger-size substrates via spatially confined epitaxy are described.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: A method for forming a single crystalline Group-III Nitride film. A substrate is provided, having a first passivation layer, a monocrystalline layer, and a second passivation layer. The substrate is patterned to form a plurality of features with elongated sidewalls having a second crystal orientation. Group-III Nitride films are formed on the elongated sidewalls, but not on the first or second passivation layers. In one embodiment, the dimensions of the patterned features and the film deposition process result in a single crystalline Group-III Nitride film having a third crystal orientation normal to the substrate surface. In another embodiment, the dimensions and orientation of the patterned features and the film deposition process result in a plurality of single crystalline Group-III Nitride films. In other embodiments, additional layers are formed on the Group-III Nitride film or films to form semiconductor devices, for example, a light-emitting diode.

Abstract: A wavelength division multiplexer is provided by the present invention, which implements the wavelength division multiplexing and de-multiplexing of the optical signals in the basic and upgrade bands by reasonably arranging the filters and selecting the spectral properties of the filters, so that the existing time division multiplexing passive optical network (TDM-PON) can transmit the next generation passive optical network (NG-PON) simultaneously and the existing TDM-PON can be smoothly upgraded to the NG-PON, meanwhile, it provides the deployed TDM-PON with the subsequent network compatibility. The wavelength division multiplexer provided in the present invention can meet the high isolation requirement of the optical signals in working band with low cost, and takes both the isolation requirement and the optical network insertion loss requirement into account, thus it has high reliability, is easy to use and for system upgrade.

Abstract: The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles.

Abstract: Described is a technology in which a finite state machine-based method segments original sequential data into high level units. Segments with similar sub-sequences are treated as the same unit. In general, the finite state machine indentifies sub-sequences in the sequential data that have similar tree-like microstructures. One described finite state machine operates by entering a path state when an input is a path command corresponding to a non-leaf node; the state machine remains in the path state until another command comprises an action command corresponding to a leaf node, whereby it outputs an action unit, or until the other command comprises a path command that is not the parent or the sibling of a next command, whereby a browsing unit is output. Also described is aggregating sub-sequences of a same unit to produce an access structure corresponding to the unit.

Abstract: The disclosure provides a method and a system for detecting a fiber fault in a Passive Optical Network (PON). The system comprises an optical path detection device, a Wavelength Division Multiplexing (WDM) coupler, a wavelength selection coupler, a branch fiber selector and a wavelength selection router. The detection system is attached to an original PON system, without influencing the operation of the original system while performing the detection. With the disclosure, the problem of being unable to determine whether there is a fault in a branch fiber due to the loss of an optical path detection reflection signal is solved, the branch fiber with a fault can be quickly located and fixed, thus the operational and maintenance costs of an operator are reduced.

Abstract: GaN LEDs monolithically integrated with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs.

Abstract: The present disclosure introduces a technique for achieving the optimal time to launch or withdraw products on a webpage. In one aspect, a method includes: storing information to be collected from a webpage for one or more items corresponding to a first product; collecting data related to the one or more items in each time section of a plurality of time sections; calculating a respective value score for each time section of the plurality of time sections based on a respective number of occurrences of the one or more items in each time section; determining the optimal time to launch or withdraw the first product based on value scores of the first product for the plurality of time sections; and rendering launch or withdrawal of the first product on the webpage in the optimal time. Implementation of the technique will conveniently allow a merchant's product website to automatically complete a product launch or withdrawal in the optimal time.

Abstract: Described is a technology in which sequential data, such as application program command sequences, are processed into patterns, such as for use in analyzing program usage. In one aspect, sequential data may be first transformed via state machines that remove repeated data, group similar data into sub-sequences, and/or remove noisy data. The transformed data is then segmented into units. A pattern extraction mechanism extracts patterns from the units into a pattern set, by calculating a stability score (e.g., a mutual information score) between succeeding units, selecting the pair of units having the most stability (e.g., the highest score), and adding corresponding information for that pair into the pattern set. Pattern extraction is iteratively repeated until a stopping criterion is met, e.g., the pattern set reaches a defined size, or when the stability score is smaller than a pre-set threshold.

Abstract: Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group III-nitride film includes flowing a group III precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p-type doped group III-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300-760 Torr.