Abstract: In a method for correlating magnetic resonance images with histological sections, a target tissue of a living animal is embedded in an enclosed matrix of an optical cutting temperature compound to obtain a packaged specimen on a platform oriented in a first guiding plane. The packaged specimen on the platform is subjected to an MRI examination by scanning along imaging planes parallel to the first guiding plane, and then subjected to a frozen sectioning procedure along sectioning planes in parallel with a second guiding plane which is parallel to the first guiding plane.

Abstract: A replacement gate process is disclosed. A substrate and a dummy gate structure formed on the substrate is provided, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, and a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer. The spacers and the CESL are made of the same material. Then, a top portion of the CESL is removed to expose the hard mask layer. Next, the hard mask layer is removed. Afterward, the dummy layer is removed to form a trench.

Abstract: A touch-sensing substrate including a substrate, a patterned conductive layer and a patterned insulating layer is provided. The substrate has a plurality of first striped regions and a plurality of second striped regions. The first striped regions are intersected with the second striped regions to define a plurality of sensing-pad disposition regions. The patterned conductive layer includes a plurality of sensing pads disposed in the sensing-pad disposition regions. The patterned insulating layer is disposed on the first striped regions and the second striped regions. The patterned insulating layer and the patterned conductive layer are spliced to form a patterned light-shielding layer. The patterned light-shielding layer has a plurality of enclosed notches arranged in array, wherein parts of the enclosed notches are surrounded by the patterned conductive layer, and other parts of the enclosed notches are surrounded by the patterned conductive layer and the patterned insulating layer.

Abstract: Methods and kits are provided for measuring protease activity in samples such as feed or food samples. The methods include adding a water insoluble substrate with a signal producing group to a feed or food sample containing the protease activity to be measured, incubating the sample in phosphate-free buffer such that the signal is produced, and measuring the amount of protease activity in the sample. The methods do not require separation of the incubation buffer from the feed or food and allow for visual inspection of a colorimetric signal for a semi-quantitative measurement of the in-feed/in-food protease activity. Thus, the assay is advantageous as it can be performed on-site without the use of laboratory equipment.

Abstract: A fixing device includes a pedestal (10), provided with a first chute (11) extending along a first direction, a first limiting part being provided in the first chute (11); a bracket (20), detachably provided on the pedestal (10), wherein a slide block (21) is provided on the bracket (20), a limited part adapted to the first limiting part in shape is provided on the slide block (21), and the first limiting part and the limited part form a buckled structure so as to fix the bracket (20) on the pedestal (10) along a vertical direction; and a connecting arm (30), wherein a first end of the connecting arm (30) is provided on the bracket (20), and a mounting part (31) connected with a display screen is provided at a second end of the connecting arm (30). By the matching between the slide block (21) and the first chute (11), the first limiting part and the limited part form the buckled structure, so that the fixing device is reusable and convenient to assemble and disassemble.

Abstract: The present invention relates to a compound of Formula I, or an isomer, pharmaceutically acceptable salt and solvate of the compound, and to a composition comprising the compound of Formula I, or the isomer, pharmaceutically acceptable salt and solvate thereof, and a pharmaceutically acceptable carrier, excipient or diluents. The present invention also relates to use of the compound of Formula I, or the isomer, pharmaceutically acceptable salt and solvate thereof for combating apoptosis, preventing or treating a disease or disorder associated with apoptosis; and especially use for protecting cardiomyocyte, and for preventing or treating a disease or disorder associated with cardiomyocyte apoptosis.

Abstract: A method for manufacturing a semiconductor device is provided. A first stack structure and a second stack structure are formed to respectively cover a portion of a first fin structure and a second fin structure. Subsequently, a spacer is respectively formed on the sidewalls of the fin structures through an atomic layer deposition process and the composition of the spacers includes silicon carbon nitride. Afterwards, a interlayer dielectric is formed and etched so as to expose the hard mask layers. A mask layer is formed to cover the second stack structure and a portion of the dielectric layer. Later, the hard mask layer in the first stack structure is removed under the coverage of the mask layer. Then, a dummy layer in the first stack structure is replaced with a conductive layer.

Abstract: A fin-shaped structure forming process includes the following step. A first mandrel and a second mandrel are formed on a substrate. A first spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The exposed first spacer material is etched to form a first spacer on the substrate beside the first mandrel. A second spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The second spacer material and the first spacer material are etched to form a second spacer on the substrate beside the second mandrel and a third spacer including the first spacer on the substrate beside the first mandrel. The layout of the second spacer and the third spacer is transferred to the substrate, so a second fin-shaped structure and a first fin-shaped structure having different widths are formed respectively.

Abstract: There is provided a method for manufacturing a semiconductor device, including: forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.

Abstract: System and method for locating and identifying nerves innervating the wall of arteries such as the renal artery are disclosed. The present invention identifies areas on vessel walls that are innervated with nerves; provides indication on whether energy is delivered accurately to a targeted nerve; and provides immediate post-procedural assessment of the effect of energy delivered to the nerve. The method includes at least the steps to evaluate a change in physiological parameters after energy is delivered to an arterial wall; and to determine the type of nerve that the energy was directed to (none, sympathetic or parasympathetic) based on the evaluated results. The system includes at least a device for delivering energy to the wall of blood vessel; sensors for detecting physiological signals from a subject; and indicators to display results obtained using said method. Also provided are catheters for performing the mapping and ablating functions.

Abstract: A replacement gate process is disclosed. A substrate and a dummy gate structure formed on the substrate is provided, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, and a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer. The spacers and the CESL are made of the same material. Then, a top portion of the CESL is removed to expose the hard mask layer. Next, the hard mask layer is removed. Afterward, the dummy layer is removed to form a trench.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes: a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees.

Abstract: The present invention discloses a producing method for an ink composition for forming absorption layers of thin film cells. The ink composition comprising CIGS or CIS nanocrystals and a chelating agent specified for the CIGS or CIS nanocrystals. According to the present invention, the mixture comprising at least two substances selected from the group consisting of Group IB elements, Group IIIA elements, Group VIA elements, salts of Group IB elements, salts of Group IIIA elements and salts of Group VIA elements can be react into a single composition while the existence of the chelating agent. The chelating agent can alternatively be aromatic diamine compounds, alkyl diamine compounds or aliphatic diamine compounds. With the implementation of the present invention, manufacturing the CIGS or CIS films in large scale and simplifying the conventional manufacturing processes are capable of accomplishment.

Abstract: The present invention discloses esters of 4,9-dihydroxy-naphtho[2,3-b]furans and methods of making and using the same. The present invention also discloses conversion of the esters into therapeutically active 4,9-dihydroxy-naphtho[2,3-b]furans in vivo. The present invention furthermore discloses pharmaceutical compositions comprising the esters of 4,9-dihydroxy-naphtho[2,3-b]furans for the treatment of various indications including proliferative diseases.

Abstract: The present invention provides a liquid crystal panel which has a plurality of data lines, a plurality of scan lines and a plurality of display units. Each of the scan lines has a second metal wiring layer, a third metal wiring layer located above the second metal wiring layer, and two transparent conductive lines. The transparent conductive lines are spaced apart from each other and located between the second and third metal wiring layers. The second and third metal wiring layers can form a parallel connection by electrically connecting the second metal wiring layer with the third metal wiring layer, so that the impedance of the scan lines can be reduced.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Abstract: A method for reducing job credentials management load is provided in the illustrative embodiments. A determination is made whether a credential data submitted with a job matches a second credential data stored in a repository, the credential data comprising a set of attributes. Responsive to the credential data matching the second credential data, a reference to the second credential data is associated with the job. The second credential data is updated to enable the job for execution. The job is forwarded with the reference to a receiver application, wherein the reference provides the receiver application an authorization to execute the job.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: The present invention discloses a method for extracting AIF and an application thereof to DCE-MRI. The method comprises steps: contacting a target tissue with a contrast agent to obtain a plurality of images; using the plurality of images to work out the tissue concentration curve of the contrast agent in each voxel; calculating the purity of the tissue concentration curve of each voxel according to the tissue concentration curves; and extracting the voxel having the highest purity as the optimized arterial location; and extracting the tissue concentration curve of the voxel having the highest purity as the arterial input function. The extracted AIF is applied to a pharmacokinetic model to obtain associated pharmacokinetic parameters. The present invention not only improves the accuracy and reliability of the derived quantitative indexes but also promotes the efficiency of the quantitative analysis.