Patents by Inventor Jifeng Zhu
Jifeng Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10840125Abstract: The present invention relates to a memory structure and a method for forming the same. The memory structure includes a first substrate and an isolation structure. The first substrate includes a substrate layer and a storage layer. The substrate layer has a first surface and a second surface opposite to the first surface. The storage layer is disposed on the first surface of the substrate layer. The substrate layer has a doped well. The isolation structure penetrates through the substrate layer and is disposed at an edge of the doped well for isolating the doped well and the peripheral substrate layer. The memory structure can avoid current leakage between the doped well and the substrate layer so as to improve the performance.Type: GrantFiled: September 10, 2018Date of Patent: November 17, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Jin Wen Dong, Jun Chen, Zhiliang Xia, Zi Qun Hua, Jifeng Zhu, He Chen
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Patent number: 10833042Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers.Type: GrantFiled: March 4, 2019Date of Patent: November 10, 2020Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
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Publication number: 20200335450Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.Type: ApplicationFiled: July 8, 2020Publication date: October 22, 2020Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
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Patent number: 10804287Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a plurality of channel holes penetrating the alternating dielectric stack; forming a channel structure in each channel hole; forming a channel column structure on the channel structure in each channel hole; trimming an upper portion of each channel column structure to form a channel plug; and forming a top selective gate cut between neighboring channel plugs.Type: GrantFiled: September 10, 2018Date of Patent: October 13, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Zhenyu Lu, Yu Ru Huang, Qian Tao, Yushi Hu, Jun Chen, Xiaowang Dai, Jifeng Zhu, Yongna Li, Lidong Song
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Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
Patent number: 10796993Abstract: Embodiments of methods and structures for forming a 3D integrated wiring structure are disclosed. The method can include forming an insulating layer on a front side of a first substrate; forming a semiconductor layer on a front side of the insulating layer; patterning the semiconductor layer to expose at least a portion of a surface of the insulating layer; forming a plurality of semiconductor structures over the front side of the first substrate, wherein the semiconductor structures include a plurality of conductive contacts and a first conductive layer; joining a second substrate with the semiconductor structures; performing a thinning process on a backside of the first substrate to expose the insulating layer and one end of the plurality of conductive contacts; and forming a conductive wiring layer on the exposed insulating layer.Type: GrantFiled: May 6, 2020Date of Patent: October 6, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng Zhu, Jun Chen, Si Ping Hu, Zhenyu Lu -
Patent number: 10784225Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact or the second bonding contact is made of an indiffusible conductive material.Type: GrantFiled: March 4, 2019Date of Patent: September 22, 2020Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.Inventors: Zongliang Huo, Jun Liu, Jifeng Zhu, Jun Chen, Zi Qun Hua, Li Hong Xiao
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Publication number: 20200295019Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads. where each landing pad is disposed over another portion of the second material layer of a respective layer stack.Type: ApplicationFiled: May 28, 2020Publication date: September 17, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Zhenyu LU, Jun Chen, Xiaowang Dai, Jifeng Zhu, Qian Tao, Yu Ru Huang, Si Ping Hu, Lan Yao, Li Hong Xiao, A Man Zheng, Kun Bao, Haohao Yang
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Patent number: 10763158Abstract: Embodiments of hybrid-bonded semiconductor structures and methods for forming a hybrid-bonded semiconductor structure are disclosed. The method can include providing a substrate and forming a base dielectric layer on the substrate. The method also includes forming first and second conductive structures in the base dielectric layer and disposing an alternating dielectric layer stack. Disposing alternating dielectric layer stack includes disposing a first dielectric layer on the base dielectric layer and the first and second conductive structures and sequentially disposing second, third, and fourth dielectric layers. The method further includes planarizing the disposed alternating dielectric layer stack and etching the alternating dielectric layer stack to form first and second openings using preset etching rates for each of the first, second, third, and fourth dielectric layers. The etching continues until at least portions of the first and second conductive structures are exposed.Type: GrantFiled: September 10, 2018Date of Patent: September 1, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Meng Yan, Jifeng Zhu, Si Ping Hu
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METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AND SEMICONDUCTOR STRUCTURE THEREOF
Publication number: 20200266147Abstract: Embodiments of methods and structures for forming a 3D integrated wiring structure are disclosed. The method can include forming an insulating layer on a front side of a first substrate; forming a semiconductor layer on a front side of the insulating layer; patterning the semiconductor layer to expose at least a portion of a surface of the insulating layer; forming a plurality of semiconductor structures over the front side of the first substrate, wherein the semiconductor structures include a plurality of conductive contacts and a first conductive layer; joining a second substrate with the semiconductor structures; performing a thinning process on a backside of the first substrate to expose the insulating layer and one end of the plurality of conductive contacts; and forming a conductive wiring layer on the exposed insulating layer.Type: ApplicationFiled: May 6, 2020Publication date: August 20, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng ZHU, Jun CHEN, Si Ping HU, Zhenyu LU -
Patent number: 10748851Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.Type: GrantFiled: March 4, 2019Date of Patent: August 18, 2020Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
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Publication number: 20200258837Abstract: Embodiments of semiconductor structures including word line contact structures for three-dimensional memory devices and fabrication methods for forming word line contact structures are disclosed. The semiconductor structures include a staircase structure having a plurality of steps, and each step includes a conductive layer disposed over a dielectric layer. The semiconductor structures further include a barrier layer disposed over a portion of the conductive layer of each step. The semiconductor structures also include an etch-stop layer disposed on the barrier layer and an insulating layer disposed on the etch-stop layer. The semiconductor structures also include a plurality of conductive structures formed in the insulating layer and each conductive structure is formed on the conductive layer of each step.Type: ApplicationFiled: May 1, 2020Publication date: August 13, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng ZHU, Zhenyu LU, Jun CHEN, Si Ping HU, Xiaowang DAI, Lan YAO, Li Hong XIAO, A Man ZHENG, Kun BAO, Haohao YANG
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Publication number: 20200258857Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact or the second bonding contact is made of an indiffusible conductive material.Type: ApplicationFiled: March 4, 2019Publication date: August 13, 2020Inventors: Zongliang Huo, Jun Liu, Jifeng Zhu, Jun Chen, Zi Qun Hua, Li Hong Xiao
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Publication number: 20200243473Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers.Type: ApplicationFiled: March 4, 2019Publication date: July 30, 2020Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
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Publication number: 20200243553Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: ApplicationFiled: April 13, 2020Publication date: July 30, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang DAI, Zhenyu LU, Jun CHEN, Qian TAO, Yushi HU, Jifeng ZHU, Jin Wen DONG, Ji XIA, Zhong ZHANG, Yan Ni LI
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Publication number: 20200243455Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.Type: ApplicationFiled: March 4, 2019Publication date: July 30, 2020Inventors: Tao Wang, Si Ping Hu, Jia Wen Wang, Shi Qi Huang, Jifeng Zhu, Jun Chen, Zi Qun Hua
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Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
Patent number: 10679941Abstract: Embodiments of methods and structures for forming a 3D integrated wiring structure are disclosed. The method can include forming an insulating layer on a front side of a first substrate; forming a semiconductor layer on a front side of the insulating layer; patterning the semiconductor layer to expose at least a portion of a surface of the insulating layer; forming a plurality of semiconductor structures over the front side of the first substrate, wherein the semiconductor structures include a plurality of conductive contacts and a first conductive layer; joining a second substrate with the semiconductor structures; performing a thinning process on a backside of the first substrate to expose the insulating layer and one end of the plurality of conductive contacts; and forming a conductive wiring layer on the exposed insulating layer.Type: GrantFiled: July 26, 2018Date of Patent: June 9, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng Zhu, Jun Chen, Si Ping Hu, Zhenyu Lu -
Patent number: 10680003Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.Type: GrantFiled: September 10, 2018Date of Patent: June 9, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Zhenyu Lu, Jun Chen, Xiaowang Dai, Jifeng Zhu, Qian Tao, Yu Ru Huang, Si Ping Hu, Lan Yao, Li Hong Xiao, A Man Zheng, Kun Bao, Haohao Yang
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Patent number: 10672711Abstract: Embodiments of semiconductor structures including word line contact structures for three-dimensional memory devices and fabrication methods for forming word line contact structures are disclosed. The semiconductor structures include a staircase structure having a plurality of steps, and each step includes a conductive layer disposed over a dielectric layer. The semiconductor structures further include a barrier layer disposed over a portion of the conductive layer of each step. The semiconductor structures also include an etch-stop layer disposed on the barrier layer and an insulating layer disposed on the etch-stop layer. The semiconductor structures also include a plurality of conductive structures formed in the insulating layer and each conductive structure is formed on the conductive layer of each step.Type: GrantFiled: September 10, 2018Date of Patent: June 2, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng Zhu, Zhenyu Lu, Jun Chen, Si Ping Hu, Xiaowang Dai, Lan Yao, Li Hong Xiao, A Man Zheng, Kun Bao, Haohao Yang
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METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AND SEMICONDUCTOR STRUCTURE THEREOF
Publication number: 20200152515Abstract: Embodiments of methods and structures for forming a 3D integrated wiring structure are disclosed. The method can include forming a dielectric layer in a first substrate; forming a semiconductor structure having a first conductive contact over a front side of the first substrate; and forming a second conductive contact at a backside of the first substrate, wherein the second conductive contact extends through a backside of the dielectric layer and connects to a second end of the first conductive contact. The 3D integrated wiring structure can include a first substrate; a dielectric layer in the first substrate; a semiconductor structure over the front side of the first substrate, having a first conductive contact; and a second conductive contact at the backside of the first substrate, and the second conductive contact extends through a backside of the dielectric layer and connects to the second end of the first conductive contact.Type: ApplicationFiled: January 17, 2020Publication date: May 14, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng ZHU, Jun CHEN, Si Ping HU, Zhenyu LU -
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
Patent number: 10651087Abstract: Embodiments of methods and structures for forming a 3D integrated wiring structure are disclosed. The method can include forming a dielectric layer in a first substrate; forming a semiconductor structure having a first conductive contact over a front side of the first substrate; and forming a second conductive contact at a backside of the first substrate, wherein the second conductive contact extends through a backside of the dielectric layer and connects to a second end of the first conductive contact. The 3D integrated wiring structure can include a first substrate; a dielectric layer in the first substrate; a semiconductor structure over the front side of the first substrate, having a first conductive contact; and a second conductive contact at the backside of the first substrate, and the second conductive contact extends through a backside of the dielectric layer and connects to the second end of the first conductive contact.Type: GrantFiled: July 26, 2018Date of Patent: May 12, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Jifeng Zhu, Jun Chen, Si Ping Hu, Zhenyu Lu