Patents by Inventor Jih-Churng Twu
Jih-Churng Twu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128178Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.Type: ApplicationFiled: February 8, 2023Publication date: April 18, 2024Inventors: Yu-Hung LIN, Wei-Ming WANG, Su-Chun YANG, Jih-Churng TWU, Shih-Peng TAI, Kuo-Chung YEE
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Publication number: 20240021453Abstract: A method includes transferring a tool monitoring device over a load port of a tool. A bottom of the tool monitoring device has a plurality of holes, and the load port comprises a plurality of pins at a top surface of the load port. The tool monitoring device is placed on the top surface of the load port. The pins at the top surface of the load port are plugged into the holes of the tool monitoring device. Heights of the pins are sensed to identifying a type of the load port after the tool monitoring device is placed on the top surface of the load port. An environment around the load port is monitored by using the tool monitoring device.Type: ApplicationFiled: July 28, 2023Publication date: January 18, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung LIN, Chi-Ying CHANG, Jih-Churng TWU, Chin-Yun CHEN, Yi-Ting CHANG, Feng-Yu CHEN
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Publication number: 20230369156Abstract: A die stacking structure, a semiconductor package and a method for forming the die stacking structure are provided. The die stacking structure includes a first device die; second device dies, bonded onto the first device die, and arranged side-by-side; and a stack of dielectric layers, extending in between the second device dies, and laterally enclosing each of the second device dies. The dielectric layers are respectively formed of a spin-on-glass (SOG) or a polymer, and a lower one of the dielectric layers has a thickness greater than a thickness of another one of the dielectric layers at a higher level.Type: ApplicationFiled: May 16, 2022Publication date: November 16, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Su-Chun Yang, Jih-Churng Twu, Jiung Wu, Chih-Hang Tung, Chen-Hua Yu
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DIE STACKING STRUCTURE, SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE DIE STACKING STRUCTURE
Publication number: 20230360993Abstract: A die stacking structure, a semiconductor package and a method for manufacturing the die stacking structure are provided. The die stacking structure includes a first device die; second device dies, bonded onto the first device die, and arranged side-by-side; a gap profile modifier, laterally enclosing bottommost portions of the second device dies, wherein a thickness of the gap profile modifier gradually decreases away from sidewalls of the second device dies; and a dielectric material, covering the gap profile modifier and laterally surrounding the second device dies.Type: ApplicationFiled: May 6, 2022Publication date: November 9, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Su-Chun Yang, Jih-Churng Twu, Jiung Wu, Chih-Hang Tung, Chen-Hua Yu -
Patent number: 11804392Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.Type: GrantFiled: January 4, 2022Date of Patent: October 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung Lin, Chi-Ying Chang, Jih-Churng Twu, Chin-Yun Chen, Yi-Ting Chang, Feng-Yu Chen
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Patent number: 11569062Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.Type: GrantFiled: May 22, 2020Date of Patent: January 31, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hom-Chung Lin, Jih-Churng Twu, Yi-Ting Chang, Chao-Po Lu, Tsung-Min Lin
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Publication number: 20220130697Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.Type: ApplicationFiled: January 4, 2022Publication date: April 28, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung LIN, Chi-Ying CHANG, Jih-Churng TWU, Chin-Yun CHEN, Yi-Ting CHANG, Feng-Yu CHEN
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Patent number: 11239099Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.Type: GrantFiled: August 13, 2019Date of Patent: February 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung Lin, Chi-Ying Chang, Jih-Churng Twu, Chin-Yun Chen, Yi-Ting Chang, Feng-Yu Chen
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Publication number: 20210366690Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.Type: ApplicationFiled: May 22, 2020Publication date: November 25, 2021Inventors: Hom-Chung LIN, Jih-Churng TWU, Yi-Ting CHANG, Chao-Po LU, Tsung-Min Lin
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Patent number: 11056365Abstract: A method for fault detection in a fabrication tool is provided. The method includes processing a semiconductor wafer in a fabrication tool according to a plurality of process events of a process run. The method further includes measuring humidity in the fabrication tool in at least one of the process events. The method also includes comparing the humidity measured in one of the process events with an expected humidity associated with the process event. In addition, the method includes based on the comparison, indicating an alarm condition when a difference between the measured humidity and the expected humidity exceeds a range of acceptable values associated with the process event.Type: GrantFiled: November 1, 2017Date of Patent: July 6, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung Lin, Jih-Churng Twu, Chin-Yun Chen, Tai-Hsiang Lin, Yu-Chi Tsai
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Patent number: 10930527Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.Type: GrantFiled: June 12, 2020Date of Patent: February 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
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Publication number: 20200312685Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.Type: ApplicationFiled: June 12, 2020Publication date: October 1, 2020Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
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Patent number: 10741426Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.Type: GrantFiled: February 27, 2018Date of Patent: August 11, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
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Publication number: 20200105555Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.Type: ApplicationFiled: August 13, 2019Publication date: April 2, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hom-Chung LIN, Chi-Ying CHANG, Jih-Churng TWU, Chin-Yun CHEN, Yi-Ting CHANG, Feng-Yu CHEN
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Publication number: 20190096714Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.Type: ApplicationFiled: February 27, 2018Publication date: March 28, 2019Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
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Publication number: 20190096723Abstract: A method for fault detection in a fabrication tool is provided. The method includes processing a semiconductor wafer in a fabrication tool according to a plurality of process events of a process run. The method further includes measuring humidity in the fabrication tool in at least one of the process events. The method also includes comparing the humidity measured in one of the process events with an expected humidity associated with the process event. In addition, the method includes based on the comparison, indicating an alarm condition when a difference between the measured humidity and the expected humidity exceeds a range of acceptable values associated with the process event.Type: ApplicationFiled: November 1, 2017Publication date: March 28, 2019Inventors: Hom-Chung LIN, Jih-Churng TWU, Chin-Yun CHEN, Tai-Hsiang LIN, Yu-Chi TSAI
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Patent number: 6924215Abstract: A method of monitoring and adjusting the position of a wafer with respect to an ion beam including setting the position of a wafer holder so that a wafer to be held therein is positioned at a tilt angle of 45 degrees and a twist angle of 45 degrees with respect to the path of an ion beam; positioning a n-type wafer without screen oxide in the wafer holder; implanting boron species into a region of the wafer at 160 KeV and a dose level of 5.0×1013 atoms/cm2; periodically measuring the sheet resistivity of a implanted wafer and readjusting the wafer tilt angle when the sheet resistivity is greater than 30 ohms/square.Type: GrantFiled: May 29, 2002Date of Patent: August 2, 2005Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Hung-Ta Huang, Hsueh-Li Sun, Juinn-Jie Chang, Stanley Huang, Jih-Churng Twu, Tom Tseng
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Patent number: 6878578Abstract: A continuous and integrated cleaning/preparation process is described to condition a silicon surface for the formation of a high quality ultra thin gate oxide described. The process is conducted with the wafer surface immersed in an aqueous solution the composition of which is varied continuously according to the steps of the process. The process includes the initial removal of contaminants and particulates followed by the removal of a native oxide. Next the silicon surface is dressed in the present of both HF and ozone by removing a thin surface layer. Any interfacial contamination or surface structural defects which lay under the native oxide are thereby removed. Next a high quality chemical oxide is grown by the action of the ozone in the aqueous bath. The chemical oxide is found to be of higher purity and structural quality than native oxide and provides a superior passivation of the active surface prior to gate oxidation.Type: GrantFiled: April 26, 2002Date of Patent: April 12, 2005Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jih-Churng Twu, Tsung-Chieh Tsai, Roung-Hui Kao, Chia-Chun Cheng
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Patent number: 6837774Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.Type: GrantFiled: March 28, 2001Date of Patent: January 4, 2005Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Tien-Chen Hu, Jih-Churng Twu
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Patent number: 6777251Abstract: A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.Type: GrantFiled: June 20, 2002Date of Patent: August 17, 2004Assignee: Taiwan Semiconductor Manufacturing Co. LtdInventors: Ching Shan Lu, Fu-Su Lee, Wei-Ming You, Jih-Churng Twu, Yu-Chien Hsiao