Abstract: A semiconductor device includes a plurality of middle interconnections and a plurality of middle plugs, which are disposed in an interlayer insulating layer and on a substrate. An upper insulating layer is disposed on the interlayer insulating layer. A first upper plug, a first upper interconnection, a second upper plug, and a second upper interconnection are disposed in the upper insulating layer. Each of the plurality of middle interconnections has a first thickness. The first upper interconnection has a second thickness that is greater than the first thickness. The second upper interconnection has a third thickness that is greater than the first thickness. The third thickness is twice to 100 times the first thickness. The second upper interconnection includes a material different from the second upper plug.

Abstract: The method includes forming a first dielectric layer on a substrate, forming a via in the first dielectric layer, sequentially forming a first metal pattern, a first metal oxide pattern, a second metal pattern, and an antireflective pattern on the first dielectric layer, and performing an annealing process to react the first metal oxide pattern and the second metal pattern with each other to form a second metal oxide pattern. The forming the second metal oxide pattern includes forming the second metal oxide pattern by a reaction between a metal element of the second metal pattern and an oxygen element of the first metal oxide pattern.

Abstract: Semiconductor packages may include a semiconductor chip on a substrate and an under-fill layer between the semiconductor chip and the substrate. The semiconductor chip may include a semiconductor substrate including first and second regions, and an interlayer dielectric layer that may cover the semiconductor substrate and may include connection lines. First conductive pads may be on the first region and may be electrically connected to some of the connection lines. Second conductive pads may be on the second region and may be electrically isolated from all of the connection lines. The semiconductor chip may also include a passivation layer that may cover the interlayer dielectric layer and may include holes that may expose the first and second conductive pads, respectively. On the second region, the under-fill layer may include a portion that may be in one of the first holes and contact one of the second conductive pads.

Abstract: A semiconductor device including a substrate including a chip region and an edge region; integrated circuit elements on the chip region; an interlayer insulating layer covering the integrated circuit elements; an interconnection structure on the interlayer insulating layer and having a side surface on the edge region; a first and second conductive pattern on the interconnection structure, the first and second conductive patterns being electrically connected to the interconnection structure; a first passivation layer covering the first and second conductive patterns and the side surface of the interconnection structure; and a second passivation layer on the first passivation layer, wherein the second passivation layer includes an insulating material different from the first passivation layer, and, between the first and second conductive patterns, the second passivation layer has a bottom surface that is located at a vertical level lower than a top surface of the first conductive pattern.

Abstract: A semiconductor device includes a plurality of middle interconnections and a plurality of middle plugs, which are disposed in an interlayer insulating layer and on a substrate. An upper insulating layer is disposed on the interlayer insulating layer. A first upper plug, a first upper interconnection, a second upper plug, and a second upper interconnection are disposed in the upper insulating layer. Each of the plurality of middle interconnections has a first thickness. The first upper interconnection has a second thickness that is greater than the first thickness. The second upper interconnection has a third thickness that is greater than the first thickness. The third thickness is twice to 100 times the first thickness. The second upper interconnection includes a material different from the second upper plug.

Abstract: A semiconductor device includes a plurality of middle interconnections and a plurality of middle plugs, which are disposed in an interlayer insulating layer and on a substrate. An upper insulating layer is disposed on the interlayer insulating layer. A first upper plug, a first upper interconnection, a second upper plug, and a second upper interconnection are disposed in the upper insulating layer. Each of the plurality of middle interconnections has a first thickness. The first upper interconnection has a second thickness that is greater than the first thickness. The second upper interconnection has a third thickness that is greater than the first thickness. The third thickness is twice to 100 times the first thickness. The second upper interconnection includes a material different from the second upper plug.

Abstract: The present invention relates to detoxified and immunologically active proteins (“mutant LTs”) having mutated amino acid sequences of heat-labile enterotoxin of E. coli, DNA sequences encoding the mutant LTs, recombinant expression vectors comprising the DNAs, recombinant microorganisms transformed with the recombinant expression vectors, process for preparing the mutant LTs and pharmaceutical application of the said protein as immunogenic antigens for vaccination and as adjuvants for anti-body production. In contrast to wild-type LT, the mutant LTs did not induce any toxic activities. The mutant LTs elicited high and comparable levels of anti-LT antibodies when delivered either intragastrically or intranasally, inducing systemic and local responses in serum and fecal extracts. Thus, they might be useful for the development of a novel diarrheal vaccine in humans and animals.

Abstract: The present invention provides a novel angiogenesis inhibitor, LK68 whose amino acid sequence is identical with the human apolipoprotein (a) kringle domains IV36, IV37 and V38, a cDNA sequence encoding the LK68, a recombinant expression vector comprising the cDNA, a recombinant microorganism transformed with the recombinant expression vector and a novel use of the LK68 as an anticancer agent and a method for treating angiogenesis-mediated disease. LK68, LK6, LK7 and LK8 exhibit inhibitory activities on the cultured endothelial cell proliferation as well as on the endothelial cell migration. LK68 and its single kringles also inhibit the normal development of capillaries in the chick embryo chorioallantoic membrane (CAM). It was also showed that systemic administration of LK68 causes the inhibition of primary tumor growth, which is correlated with a suppression of tumor-induced angiogenesis.

Abstract: The present invention provides a novel angiogenesis inhibitor, LK68 whose amino acid sequence is identical with the human apolipoprotein (a) kringle domains IV36, IV37 and V38, a cDNA sequence encoding the LK68, a recombinant expression vector comprising the cDNA, a recombinant microorganism transformed with the recombinant expression vector and a novel use of the LK68 as an anticancer agent and a method for treating angiogenesis-mediated disease. LK68, LK6, LK7 and LK8 exhibit inhibitory activities on the cultured endothelial cell proliferation as well as on the endothelial cell migration. LK68 and its single kringles also inhibit the normal development of capillaries in the chick embryo chorioallantoic membrane (CAM). It was also showed that systemic administration of LK68 causes the inhibition of primary tumor growth, which is correlated with a suppression of tumor-induced angiogenesis.

Abstract: The present invention provides a novel angiogenesis inhibitor, LK68 whose amino acid sequence is identical with the human apolipoprotein (a) kringle domains IV36, IV37 and V38, a cDNA sequence encoding the LK68, a recombinant expression vector comprising the cDNA, a recombinant microorganism transformed with the recombinant expression vector and a novel use of the LK68 as an anticancer agent and a method for treating angiogenesis-mediated disease. LK68, LK6, LK7 and LK8 exhibit inhibitory activities on the cultured endothelial cell proliferation as well as on the endothelial cell migration. LK68 and its single kringles also inhibit the normal development of capillaries in the chick embryo chorioallantoic membrane (CAM). It was also showed that systemic administration of LK68 causes the inhibition of primary tumor growth, which is correlated with a suppression of tumor-induced angiogenesis.