Abstract: The present disclosure is to provide an apparatus for dispensing droplets. Provided is an apparatus for dispensing droplets, the apparatus including: a stage on which a substrate is disposed and spraying holes are disposed; a substrate moving unit for moving the substrate disposed on the stage in a first direction; a droplet dispensing unit disposed in a vertical direction above the substrate; and a droplet dispensing unit moving unit moving the droplet dispensing unit in a second direction, perpendicular to the first direction on a horizontal plane, the apparatus, further including: a distance measuring unit measuring a distance from a substrate in the vertical direction; and a control unit, wherein the control unit measures a distance between the distance measuring unit and the substrate through the distance measuring unit while moving the substrate through the substrate moving unit.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: A pouch film laminate according to the present disclosure may include a base material layer, a gas barrier layer, and a sealant layer. The gas barrier layer may be disposed between the base material layer and the sealant layer. The gas barrier layer may include stainless steel. The pouch film laminate may have a tensile rupture strength of about 130% to about 250% of a tensile rupture strength of the gas barrier layer.

Abstract: A smart drilling system includes a terminal configured to map a design space to an actual space and having perforation location information in the design space, a drilling machine including a drill for perforation and configured to perform perforation in the actual space under control of the terminal based on the perforation location information, and a total station configured to acquire location information of a reference point in the actual space for mapping the design space to the actual space and location information of the drilling machine in the actual space, and to transmit the location information of the reference point in the actual space and the location information of the drilling machine to the terminal, wherein the terminal recognizes and displays a perforable region or a perforable point at a current position of the drilling machine.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: A multilayer electronic component includes a body including a plurality of dielectric layers and internal electrodes, and an external electrode disposed on the body and connected to the internal electrodes. The body includes an active portion including the plurality of internal electrodes to form capacitance, and cover portions disposed on the active portion, and the cover portions include an outer cover portion including a carbon compound and an inner cover portion disposed between the active portion and the outer cover portion. An average carbon content (Cc2) of the outer cover portion compared to an average carbon content (Cc1) of the inner cover portion satisfies 100?Cc2/Cc1?10,000.

Abstract: Provided is a method of preparing disodium 5?-guanylate heptahydrate crystals from an aqueous 5?-guanylic acid solution.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: The present disclosure relates to a method for preparing an amino acid mixed solid, including a first step of preparing an amino acid mixed solution containing an amino acid; a second step of stirring the amino acid mixed solution to form a thin film, and drying and pulverizing the formed thin film to prepare wet granules; and a third step of drying the wet granules to prepare an amino acid mixed solid in a granular formulation, wherein, the second step is conducted for drying the amino acid mixed solution so that a solid concentration in the wet granules is within a granulation concentration range.

Abstract: A light emitting diode and a light emitting device having the same, in which the light emitting diode can include a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; a lower active layer disposed there between; and an upper active layer disposed between the lower active layer and the second conductivity type semiconductor layer. The lower active layer can emit light having a wavelength shorter than that of the upper active layer, the upper active layer can include a plurality of well layers and a plurality of barrier layers, at least one of the plurality of barrier layers can include a first barrier layer and a second barrier layer having an n-type impurity doping concentration lower than that of the first barrier layer, and the first barrier layer can be closer to the first conductivity type semiconductor layer than the second barrier layer.

Abstract: A display apparatus includes multiple pixels. The pixels can emit one or more colors of light. Light of the same color emitted by two or more of the pixels can have wavelengths that differ by no more than one percent. The pixels can include a stacked structure including two or more subpixels, with each subpixel emitting light of a different color than the other subpixels in the stacked structure.

Abstract: The present application relates to a method for preparing amino acid granules from a fermentation broth and amino acid granules prepared by way of this method.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

Abstract: A light emitting device according to an exemplary embodiment includes a first light emission region and a second light emission region. The first and second light emission regions include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active region formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, an area of the first light emission region is larger than an area of the second emission region, and at least one of the first emission region or the second emission region emits light of a plurality of peak wavelengths.

Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; a second conductivity type nitride semiconductor layer disposed on the upper active layer, an upper step coverage layer disposed between the second conductivity type semiconductor layer and the upper active layer; and a lower step coverage layer disposed between the intermediate layer and the lower active layer, in which in an electroluminescence spectrum, the light emitting diode emits light having a highest peak intensity in a wavelength range of 500 nm or more in a visible light region.

Abstract: A light emitting device and a light emitting module having the same are provided. A light emitting device includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which, upon operation, the active layer emits light of a first peak wavelength and light of a second peak wavelength in which the first peak wavelength may be within a range of about 400 nm to about 415 nm, and the second peak wavelength may be greater than or equal to about 440 nm.

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; and a second conductivity type nitride semiconductor layer disposed on the upper active layer, in which the lower active layer and the upper active layer emit light having different peak wavelengths from each other.