Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a bond between a non-device side of a first die and a non-device side of a second die, wherein forming the bond between the non-device side of the first die and the non-device side of the second die does not comprise using an interfacial glue.

Abstract: A method and structure for using porous diamond interlayer dielectrics (ILDs) in conjunction with carbon nanotube interconnects is herein described. A diamond ILD is deposited on an underlaying layer. The diamond layer is optionally and selectively removed of non-sp3 bond to create a porous diamond film. Trenches and vias are etched in the porous diamond ILD. Carbon nanotubes are deposited on the diamond ILD filling the trenches using a liquid crystal host-carbon nanotube solution. Using methods of nematic liquid crystal alignment, the carbon nanotubes are aligned under the influence of the liquid crystals. At least some of the liquid crystal solution is removed leaving an aligned carbon nanotubes.

Abstract: A method and structure for using porous diamond interlayer dielectrics (ILDs) in conjunction with carbon nanotube interconnects is herein described. A diamond ILD is deposited on an underlaying layer. The diamond layer is optionally and selectively removed of non-sp3 bond to create a porous diamond film. Trenches and vias are etched in the porous diamond ILD. Carbon nanotubes are deposited on the diamond ILD filling the trenches using a liquid crystal host-carbon nanotube solution. Using methods of nematic liquid crystal alignment, the carbon nanotubes are aligned under the influence of the liquid crystals. At least some of the liquid crystal solution is removed leaving an aligned carbon nanotubes.

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a bond between a non-device side of a first die and a non-device side of a second die, wherein forming the bond between the non-device side of the first die and the non-device side of the second die does not comprise using an interfacial glue.

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a bond between a non-device side of a first die and a non-device side of a second die, wherein forming the bond between the non-device side of the first die and the non-device side of the second die does not comprise using an interfacial glue.

Abstract: A microelectronic die is aligned with a package substrate and attached to it using solder balls. A specially shaped heat spreader, preferably with a coefficient of thermal expansion (CTE) similar to that of silicon, is attached to the back side of the die using a heat-conducting adhesive. An epoxy-based material is flowed into the gap between the die, the substrate, and the heat spreader via a through-hole in either the substrate or the heat spreader using a dispense process or a transfer molding process. By positioning the heat spreader to abut the die corners and/or edges, the stresses on the die are substantially reduced or eliminated.

Abstract: A microelectronic die is aligned with a package substrate and attached to it using solder balls. A specially shaped heat spreader, preferably with a coefficient of thermal expansion (CTE) similar to that of silicon, is attached to the back side of the die using a heat-conducting adhesive. An epoxy-based material is flowed into the gap between the die, the substrate, and the heat spreader via a through-hole in either the substrate or the heat spreader using a dispense process or a transfer molding process. By positioning the heat spreader to abut the die corners and/or edges, the stresses on the die are substantially reduced or eliminated.

Abstract: A microelectronic die is aligned with a package substrate and attached to it using solder balls. A specially shaped heat spreader, preferably with a coefficient of thermal expansion (CTE) similar to that of silicon, is attached to the back side of the die using a heat-conducting adhesive. An epoxy-based material is flowed into the gap between the die, the substrate, and the heat spreader via a through-hole in either the substrate or the heat spreader using a dispense process or a transfer molding process. By positioning the heat spreader to abut the die corners and/or edges, the stresses on the die are substantially reduced or eliminated.

Abstract: An electrical socket connection for coupling a conductive pin to a circuit board. The socket has several contact points that can be expanded to create an opening sufficiently sized to allow the conductive pin to pass through the contact points with minimal insertion force. After the pin is inserted, the contact points can be retracted to form electrical interconnects with the pin. The contacts are electrically coupled to the remaining circuitry via the socket. The present invention, therefore, provides a zero insertion force socket that has multiple contact points and does not require secondary movement of the pin or circuit package.

Abstract: An electrical socket connection for coupling a conductive pin to a circuit board. The socket has several contact points that can be expanded to create an opening sufficiently sized to allow the conductive pin to pass through the contact points with minimal insertion force. After the pin is inserted, the contact points can be retracted to form electrical interconnects with the pin. The contacts are electrically coupled to the remaining circuitry via the socket. The present invention, therefore, provides a zero insertion force socket that has multiple contact points and does not require secondary movement of the pin or circuit package.