Abstract: A phase comparator compares phase of a clock signal and a generated comparison clock signal based upon rising edges. The output of the phase comparator may include a series of short up (U) pulses or down (D) pulses, depending whether the phase of the comparison clock is leading or lagging the clock. Up and down pulses U and D control an up/down shift register which in turn compensates phase difference by inserting or removing additional discrete delay elements in a variable delay line. Based upon delay signals generated by the variable delay line, a double frequency clock generator generates a 2.times. clock signal. The 2.times. clock signal is divided by 2 in a divider to supply the phase comparator with the generated comparison clock signal. The feedback scheme helps the digital delay lock loop of stabilize after a few clock cycles without additional external control.

Abstract: A method and system to efficiently incorporate engineering change order (ECO) modifications into an integrated circuit layout having configurable gate array cells is provided. In generating the original integrated circuit layout, extra gate array cells are inserted into the layout. These gate array cells can be reconfigured to modify their functionality according to changes specified by the ECO. A new netlist with a description of the required modifications is generated and provided to a place-and-route CAD tool to create a new layout of the integrated circuit.

Abstract: The present photoelectric conversion device includes a photo-receiving surface generating electron-hole pairs due to a distortion of an energy band thereof after receiving light, and two contacts contacting the photo-receiving surface for separating the electron-hole pairs. By this disclosure, a cost-effective, easily-makable photoelectric conversion device made by a clean manufacturing process is provided. A preferred MOS photoelectric conversion device of the present invention is made by using a silicon substrate having an upper surface and a lower surface, growing an oxide layer on the upper surface of the silicon substrate, forming a first metal contact layer on said oxide layer, forming a second metal contact layer on the lower surface of the silicon substrate, and breaking the MOS structure into several parts each having a broken surface to serve as a photo-receiving surface.