Abstract: One embodiment includes a method for correlating external references to a Web Page with conversions performed by one or more visitors to the Web Page. The method includes receiving the Web Page to monitor and determining one or more conversions to correlate. The one or more conversions to correlate include one or more actions performed on the Web Page by a visitor to the Web Page. The method also includes identifying the visitor to the Web Page. The visitor to the Web Page completed at least one action included in the conversions to correlate. The method also includes identifying the at least one action completed by the visitor and identifying an external reference that directed the visitor to the Web Page. The external reference contains a reference to the Web Page.

Abstract: The preferred embodiments provide for a process for preparing a TiO2 thin film. The preferred embodiments also provide for TiO2 thin films prepared by the process herein, and a method of using TiO2 thin films for killing bacteria and viruses in an environment under ultraviolet irradiation. The TiO2 thin films according to the invention have higher photocatalytic activity, and can particularly be used to photocatalytically degrade organic pollutants in air to hereby kill bacteria and viruses therein.

Abstract: One example embodiment includes a method for indexing online references of an entity. The method includes identifying one or more channels of the Internet to be searched for references to an entity and identifying one or more signals to be evaluated within each of the one or more channels. The method also includes crawling the Internet for online references to the entity, wherein crawling the Internet comprises searching the one or more channels of the Internet for references to the entity and evaluating the one or more signals. The method further includes constructing a reverse index of the references, wherein the reverse index is based on each channel in which a reference is found and the one or more signals evaluated for the reference.

Abstract: The present invention provides purified disease detection and treatment molecule polynucleotides (mddt). Also encompassed are the polypeptides (MDDT) encoded by mddt. The invention also provides for the use of mddt, or complements, oligonucleotides, or fragments thereof in diagnostic assays. The invention further provides for vectors and host cells containing mddt for the expression of MDDT. The invention additionally provides for the use of isolated and purified MDDT to induce anitbodies and to screen libraries of compounds and the use of anti-MDDT antibodies in diagnostic assays. Also provided are microarrays containing mddt and methods of use.

Abstract: The preferred embodiments provide for a process for preparing a TiO2 thin film. The preferred embodiments also provide for TiO2 thin films prepared by the process herein, and a method of using TiO2 thin films for killing bacteria and viruses in an environment under ultraviolet irradiation. The TiO2 thin films according to the invention have higher photocatalytic activity, and can particularly be used to photocatalytically degrade organic pollutants in air to hereby kill bacteria and viruses therein.

Abstract: The present invention provides a method for preparing mesoporous TiO2 thin films with high antibacterial and photocatalytic activities. The method involves coating onto a substrate a TiO2 sol-gel prepared from hydrolysis and condensation of titanium alkoxide in the presence of a stabilizer and thermally treating the substrate at a temperature ranging from 400° C. to 900° C. The TiO2 thin films fabricated according to the method of the present invention show two times higher antibacterial and photocatalytic activities than the conventional TiO2 thin films.

Abstract: An intelligent air-condition system that detects the signals of the temperature distribution among the environment by using the infrared radiation, especially detects the location of the human-body temperature signals. Hence, according to the detected signals, the gas(es) for air-conditions can be firstly transmitted into the location where the human-body temperature signals exist, or be firstly transmitted into where the local temperature is urgent to be adjusted. Besides, the transitions of the gas(es) can be paused or stopped while there is no human-body temperature.

Abstract: The present invention provides a method for preparing mesoporous TiO2 thin films with high antibacterial and photocatalytic activities. The method involves coating onto a substrate a TiO2 sol-gel prepared from hydrolysis and condensation of titanium alkoxide in the presence of a stabilizer and thermally treating the substrate at a temperature ranging from 400° C. to 900° C. The TiO2 thin films fabricated according to the method of the present invention show two times higher antibacterial and photocatalytic activities than the conventional TiO2 thin films.

Abstract: An insulator-compound semiconductor interface structure is disclosed including compound semiconductor material with a spacer layer of semiconductor material having a bandgap which is wider than the bandgap of the compound semiconductor material positioned on a surface of the compound semiconductor material and an insulating layer positioned on the spacer layer. Minimum and maximum thicknesses of the spacer layer are determined by the penetration of the carrier wave function into the spacer layer and by the desired device performance. In a specific embodiment, the interface structure is formed in a multi-wafer epitaxial production system including a transfer and load module with a III-V growth chamber attached and an insulator chamber attached.

Abstract: A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.

Abstract: A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.

Abstract: A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400.degree. C. to 750.degree. C. The surface is monitored during deposition to detect a (4.times.2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800.degree. C. to 900.degree. C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2.times.1) surface pattern on the surface.

Abstract: An electro-conductive ultraviolet light transmitting Ga.sub.2 O.sub.3 material (10) with a metallic oxide phase is deposited on a GaAs substrate or supporting structure (12). The Ga.sub.2 O.sub.3 material or thin layer comprises a minor component of metallic IrO.sub.2. The Ga.sub.2 O.sub.3 thin layer may be positioned using thermal evaporation (106) of Ga.sub.2 O.sub.3 or of a Ga.sub.2 O.sub.3 containing a compound from an Iridium crucible (108). Alternatively, the Ir may be co-evaporated (110) by electron beam evaporation. The electro-conductive ultraviolet light transmitting material Ga.sub.2 O.sub.3 with a metallic oxide phase is suitable for use on solar cells and in laser lithography.

Abstract: A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high purity elemental Si and an atomic beam of high purity nitrogen. In a preferred embodiment, a III-V compound semiconductor wafer structure is heated in an ultra high vacuum system to a temperature below the decomposition temperature of said compound semiconductor wafer structure and a silicon nitride layer is formed using a molecular beam of Si provided by either thermal evaporation or electron beam evaporation, and an atomic nitrogen beam provided by either RF or microwave plasma discharge.

Abstract: A method of thermal processing a supporting structure comprised of various compound semiconductor layers having a Gd free Ga.sub.2 O.sub.3 surface layer including coating the surface layer with a dielectric or a metallic cap layer or combinations thereof, such that the low D.sub.it Ga.sub.2 O.sub.3 -compound semiconductor structure is conserved during thermal processing, e.g. during activation of ion implants of a self aligned metal-oxide-compound semiconductor gate structure. In a preferred embodiment, the semiconductor structure has a surface of GaAs, the Gd free Ga.sub.2 O.sub.3 layer has a thickness in a range of approximately 1 nm to 20 nm, and the insulating or metallic cap layer has a thickness in a range of approximately 1 nm to 500 nm.

Abstract: A method and apparatus for automatically adjusting the bandwidth of a GPS receiver's phase lock loop in response to acceleration changes of the tracked vehicle. The bandwidth is increased when the vehicle's acceleration rate exceeds a pre-determined value for maintaining phase lock loop and is reduced when the vehicle's acceleration rate drops below a pre-determined value for reducing the amount of noise introduced into the phase lock loop.