Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: A method of fabricating a semiconductor device. A cell area and a core area are defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

Abstract: There is provided a semiconductor memory device capable of improving performance and reliability of an element. The semiconductor memory device includes a substrate including a cell region and a peripheral region, a cell region isolation layer in the substrate, isolating the cell region from the peripheral region, an isolation active region surrounded by the cell region isolation layer, a bit line structure on the cell region, including a cell conductive line and a cell gate electrode in the substrate of the cell region, crossing the cell conductive line.

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: A semiconductor nanoparticle, a production method, and an electroluminescent devices including the same, wherein the semiconductor nanoparticles include a zinc chalcogenide including zinc, selenium, and sulfur, the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles exhibit a peak emission wavelength in a range of greater than or equal to about 455 nanometers (nm) and less than or equal to about 480 nm, in a photoluminescence spectroscopy analysis, the semiconductor nanoparticles exhibit an absolute quantum yield of greater than or equal to about 80% and a full width at half maximum of less than or equal to about 50 nm, and an average particle size of the semiconductor nanoparticles is greater than or equal to about 12 nm and less than or equal to about 50 nm.

Abstract: A light emitting device includes a first electrode and a second electrode facing each other, a light emitting layer disposed between the first electrode and the second electrode, and the light emitting layer including quantum dots, wherein the light emitting layer includes a first light emitting layer proximate to the first electrode and a second light emitting layer proximate to the second electrode, the quantum dots of the first light emitting layer include a first ligand on a surface, and the quantum dots of the second light emitting layer include a second ligand on a surface, the first ligand different from the second ligand, a HOMO energy level of the first light emitting layer is lower (shallower) than a HOMO energy level of the second light emitting layer.

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

Abstract: A rice suspension cell according to an embodiment is useful for producing recombinant canine or feline albumin at high efficiency, and thus, by culturing the rice suspension cell, a large amount of recombinant canine or feline albumin can be safely produced at high efficiency. Moreover, it is expected that the veterinary composition for preventing, ameliorating, or treating hypoalbuminemia comprising the rice suspension cell of the present invention would greatly contribute to the resolving of the problems related to safety, social controversies, or the like that are caused by prescribing human serum albumin in veterinary care practice.

Abstract: The present invention provides an ink composition for 3D printing based on a urea reaction that is applied as a liquid on a build platform, undergoes a phase change to a gelled solid in an applied state, and forms a 3D structure by being cured by cross-linking through the urea reaction with a curing agent ink sprayed onto a surface, and a 3D printing method using the same.

Abstract: The present invention provides an inkjet-type 3D printing method using a urea reaction capable of quickly printing a large-area 3D structure regardless of a size of a printed matter by printing a 3D structure on a surface of a subject ink applied in units of layers through the urea reaction between a hardener ink and the subject ink applied by an inkjet method while omitting a separate supporter structure for supporting an overhang portion of the 3D structure to be printed during 3D printing by using, as the subject ink, a phase change ink composition ink that exists in a liquid phase at room temperature but is frozen and gelled at a certain temperature or lower.

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

Abstract: A starter for producing sourdough is provided. The starter includes Saccharomyces cerevisiae Y3-1 (KCTC 15070BP) and Leuconostoc mesenteroides M1-2 (KCTC 15071BP). The Saccharomyces cerevisiae Y3-1 (KCTC 15070BP), Leuconostoc mesenteroides M1-2 (KCTC 15071BP), and Bacillus belezensis Kh2-2 (KCTC 14642BP) are used in a weight ratio of 6 to 7:2 to 3:1 to 2.

Abstract: A semiconductor memory device is provided. The semiconductor memory device comprises a substrate including a cell region having an active region defined by a cell element isolation layer, a peripheral region near the cell region, and a boundary region between the cell region and the peripheral region. The device includes a word line structure in the substrate and extending in a first direction, a bit line structure on the substrate extending from the cell region to the boundary region in a second direction that crosses the first direction, including first and second cell conductive layers sequentially stacked on the substrate, and a bit line contact between the substrate and the bit line structure and connecting the substrate with the bit line structure. The second cell conductive layer in the boundary region is thicker than the second cell conductive layer in the cell region.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: The present disclosure relates to a semiconductor device, and a test apparatus and method thereof, capable of accurately detecting a defect by using a plurality of resistor circuits in a test process. The test apparatus of a semiconductor device according to an aspect of the present disclosure may include semiconductor chips each including an external resistor circuit disposed to be dispersed along an outer region of a chip and an internal resistor circuit disposed in an inner region of the chip in order to test cracks, and test equipment that drives the external resistor circuit and the internal resistor circuit and compares an output of the external resistor circuit with an output of the internal resistor circuit to detect whether a defect occurs in each of the semiconductor chips.

Abstract: A new use of estrogen-related receptor ? (ERR?) inhibitor in enhancing cancer treatment and a pharmaceutical composition for inhibiting the resistance of cancer to tyrosine kinase inhibitors and enhancing an anticancer effect are disclosed. The pharmaceutical composition contains an ERR? inhibitor as an active ingredient. The pharmaceutical composition for treating tyrosine kinase inhibitor-resistant advanced cancer. The composition can be administered in combination with tyrosine kinase inhibitor. A method for determining if a cancer is tyrosine kinase-resistant is also disclosed.